ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter E T Value Unit 100 V -VCBO 100 V -VEBO 5 V -IC 15 A -IB Ptot 0.5 85 0.68 A W W/OC Thermal Resistance, Junction to Case RθJC 1.47 O Operating and Storage Junction Temperature Range TJ, Ts -55 to +150 M E Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current – Continuous S Base Currentt Total Power Dissipation @ TC = 25 OC Derate above 25 OC Symbol H C -VCEO C/W C O SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 22/03/2006 ST BDW47 Characteristics at TC = 25 OC Parameter Symbol Min. Max. Unit at -VCE = 4 V, -IC = 5 A hFE 1000 - - at -VCE = 4 V, -IC = 10 A hFE 250 - - -VCEO(sus) 100 - V -ICEO - 2 mA -ICBO - 1 mA -IEBO - 2 mA DC Current Gain Collector Emitter Sustaining Voltage at -IC = 30 mA Collector Cutoff Current at -VCE = 50 V Collector Cutoff Current at -VCB = 100 V Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 5 A, -IB = 10 mA at -IC = 10 A, -IB = 50 mA Base Emitter on Voltage M E at -IC = 10 A, -VCE = 4 V Second Breakdown Collector Current With Base Forward Biased at -VCE = 22.5 V at -VCE = 36 V S 1) Transition Frequency E T at -VCE = 3 V, -IC = 3 A, f = 1 MHz Output Capacitance at -VCB = 10 V, f = 0.1 MHz 1) H C -VCE(sat) - 2 V -VCE(sat) - 3 V -VBE(on) - 3 V IS/b 3.8 - A 1.2 - A fT 4 - MHz Cob - 300 pF Pulse Test non repetitive: Pulse Width = 250 ms SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 22/03/2006 ST BDW47 TO-220 PACKAGE OUTLINE M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 22/03/2006