stbdw47(to-220)

ST BDW47
PNP Silicon Planar Darlington Power Transistor
General purpose and low speed switching application
TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
E
T
Value
Unit
100
V
-VCBO
100
V
-VEBO
5
V
-IC
15
A
-IB
Ptot
0.5
85
0.68
A
W
W/OC
Thermal Resistance, Junction to Case
RθJC
1.47
O
Operating and Storage Junction Temperature Range
TJ, Ts
-55 to +150
M
E
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current – Continuous
S
Base Currentt
Total Power Dissipation @ TC = 25 OC
Derate above 25 OC
Symbol
H
C
-VCEO
C/W
C
O
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/03/2006
ST BDW47
Characteristics at TC = 25 OC
Parameter
Symbol
Min.
Max.
Unit
at -VCE = 4 V, -IC = 5 A
hFE
1000
-
-
at -VCE = 4 V, -IC = 10 A
hFE
250
-
-
-VCEO(sus)
100
-
V
-ICEO
-
2
mA
-ICBO
-
1
mA
-IEBO
-
2
mA
DC Current Gain
Collector Emitter Sustaining Voltage
at -IC = 30 mA
Collector Cutoff Current
at -VCE = 50 V
Collector Cutoff Current
at -VCB = 100 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 5 A, -IB = 10 mA
at -IC = 10 A, -IB = 50 mA
Base Emitter on Voltage
M
E
at -IC = 10 A, -VCE = 4 V
Second Breakdown Collector Current
With Base Forward Biased
at -VCE = 22.5 V
at -VCE = 36 V
S
1)
Transition Frequency
E
T
at -VCE = 3 V, -IC = 3 A, f = 1 MHz
Output Capacitance
at -VCB = 10 V, f = 0.1 MHz
1)
H
C
-VCE(sat)
-
2
V
-VCE(sat)
-
3
V
-VBE(on)
-
3
V
IS/b
3.8
-
A
1.2
-
A
fT
4
-
MHz
Cob
-
300
pF
Pulse Test non repetitive: Pulse Width = 250 ms
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/03/2006
ST BDW47
TO-220 PACKAGE OUTLINE
M
E
S
E
T
H
C
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/03/2006