MPSA63 / 64 PNP Silicon Epitaxial Planar Transistor Darlington Transistor for high gain amplification 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCES 30 V Emitter Base Voltage -VEBO 10 V Collector Current -IC 500 mA Total Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 mA Symbol Min. Max. Unit hFE hFE hFE hFE 5000 10000 10000 20000 - - Collector Base Cutoff Current at -VCB = 30 V -ICBO - 100 nA Emitter Base Cutoff Current at -VEB = 10 V -IEBO - 100 nA Collector Emitter Breakdown Voltage at -IC = 100 µA -V(BR)CES 30 - V Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 100 µA -VCE(sat) - 1.5 V Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA VBE(on) - 2 V fT 125 - MHz at -VCE = 5 V, -IC = 100 mA MPSA63 MPSA64 MPSA63 MPSA64 Transition Frequency at -VCE = 5 V, IE = 10 mA SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 04/08/2007 MPSA63 / 64 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 04/08/2007