BC546…BC550 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Collector Base Voltage Collector Emitter Voltage Symbol BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548, BC549 Emitter Base Voltage Value Unit 80 50 30 65 45 30 VCBO VCEO V V VEBO 6 V Collector Current (DC) IC 100 mA Peak Collector Current ICM 200 mA Total Power Dissipation Ptot 500 mW Tj 150 O Tstg - 65 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548, BC549 Emitter Base Breakdown Voltage at IE = 10 µA C C Symbol Min. Max. Unit hFE hFE hFE 110 200 420 220 450 800 - ICBO - 15 nA IEBO - 100 nA 80 50 30 65 45 30 - 6 - V(BR)CBO V(BR)CEO V(BR)EBO SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated :27/12/2007 V V V BC546…BC550 Characteristics at Ta = 25 OC Parameter Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. Max. Unit VCE(sat) - 0.25 0.6 V VBE(on) 0.55 - 0.7 0.77 V fT 100 - MHz Ccb - 6 pF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated :27/12/2007