BC549

BC546…BC550
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier application
These transistors are subdivided into three groups A,
B and C according to their current gain.
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 C)
Parameter
O
Collector Base Voltage
Collector Emitter Voltage
Symbol
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
Emitter Base Voltage
Value
Unit
80
50
30
65
45
30
VCBO
VCEO
V
V
VEBO
6
V
Collector Current (DC)
IC
100
mA
Peak Collector Current
ICM
200
mA
Total Power Dissipation
Ptot
500
mW
Tj
150
O
Tstg
- 65 to + 150
O
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
Collector Base Cutoff Current
at VCB = 30 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
Emitter Base Breakdown Voltage
at IE = 10 µA
C
C
Symbol
Min.
Max.
Unit
hFE
hFE
hFE
110
200
420
220
450
800
-
ICBO
-
15
nA
IEBO
-
100
nA
80
50
30
65
45
30
-
6
-
V(BR)CBO
V(BR)CEO
V(BR)EBO
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated :27/12/2007
V
V
V
BC546…BC550
Characteristics at Ta = 25 OC
Parameter
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base Emitter On Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
Transition Frequency
at VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Symbol
Min.
Max.
Unit
VCE(sat)
-
0.25
0.6
V
VBE(on)
0.55
-
0.7
0.77
V
fT
100
-
MHz
Ccb
-
6
pF
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated :27/12/2007