MPSA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the PNP transistor MPSA94 is recommended. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Symbol Value Unit Collector Base Voltage VCBO 500 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 6 V Collector Current IC 300 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 10 V, IC = 50 mA at VCE = 10 V, IC = 100 mA Collector Base Cutoff Current at VCB = 400 V Collector Emitter Cutoff Current at VCE = 400 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 1 mA, IB = 0.1 mA at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Output Capacitance at VCB = 20 V, f = 1 MHz C C Symbol Min. Max. Unit hFE hFE hFE hFE 40 50 45 40 200 - - ICBO - 0.1 µA ICEO - 0.5 µA IEBO - 0.1 µA V(BR)CBO 500 - V V(BR)CEO 400 - V V(BR)EBO 6 - V VCE(sat) VCE(sat) VCE(sat) - 0.4 0.5 0.75 V V V VBE(sat) - 0.75 V Cob - 7 pF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 27/01/2010 Rev: 01 MPSA44 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 27/01/2010 Rev: 01