MMBTA63 / MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Collector Base Voltage -VCBO Collector Emitter Voltage -VCEO Emitter Base Voltage -VEBO Collector Current E T -IC Power Dissipation Ptot Junction Temperature Tj Storage Temperature Range TStg M E Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA at -VCE = 5 V, -IC = 100 mA S MMBTA63 MMBTA64 MMBTA63 MMBTA64 Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA H C Value Unit 30 V 30 V 10 V 500 mA 200 mW 150 O C - 55 to + 150 O C Symbol Min. Max. Unit hFE hFE hFE hFE 5000 10000 10000 20000 - - -ICBO - 100 nA -IEBO - 100 nA -V(BR)CEO 30 - V -VCE(sat) - 1.5 V -VBE(on) - 2 V fT 125 - MHz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 21/12/2006 MMBTA63 / MMBTA64 M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 21/12/2006