ST 13002G NPN Silicon Epitaxial Planar Transistor High voltage power transistor 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage VCES 700 V Collector Emitter Voltage VCEO 450 V Emitter Base Voltage VEBO 9 V Collector Current IC 0.5 A Collector Peak Current ICM 1.5 A Total Power Dissipation Ptot 0.8 W Tj 150 O Tstg - 65 to + 150 O Operating Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter C C Symbol Min. Max. Unit DC Current Gain at VCE = 2 V, IC = 200 mA hFE 23 35 - Collector Emitter Cutoff Current at VCE = 700 V ICES - 1 mA V(BR)CEO 450 - V V(BR)EBO 9 18 V VCEsat - 0.5 1 V VBEsat - 1 1.2 V tr - 0.7 µs Storage Time at VCC = 60 V, IC = 0.3 A, IB = -IB2 = 0.1 A, tp = 25 μs ts - 2.5 µs Fall Time at VCC = 60 V, IC = 0.3 A, IB = -IB2 = 0.1 A, tp = 25 μs tf - 0.5 µs Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 mA Collector Emitter Saturation Voltage at IC = 200 mA, IB = 40 mA at IC = 500 mA, IB = 100 mA Base Emitter Saturation Voltage at IC = 200 mA, IB = 40 mA at IC = 500 mA, IB = 100 mA Rise Time at VCC = 60 V, IC = 0.3 A, IB = -IB2 = 0.1 A, tp = 25 μs SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/09/2009 CL ST 13002G SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/09/2009 CL