ST 13002A NPN Silicon Epitaxial Planar Transistor High voltage power transistor TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current IC 0.3 A Collector Current (Pulse) ICP 0.5 A Total Dissipation Ptot 0.6 W Tj 150 O Tstg - 55 to + 150 O Operating Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 10 µA at VCE = 10 V, IC = 100 mA at VCE = 10 V, IC = 280 mA Symbol Min. Max. Unit hFE hFE hFE 15 25 12 40 40 30 - Collector Cutoff Current at VCB = 700 V ICBO - 10 µA Emitter Cutoff Current at VEB = 7 V IEBO - 10 µA Collector Base Breakdown Voltage at IC = 10 mA V(BR)CBO 700 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 400 - V V(BR)EBO 9 - V VCEsat - 1 1.5 V fT 4 - MHz Emitter Base Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA at IC = 200 mA, IB = 20 mA Transition Frequency at VCE = 10 V, IC = 100 mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/09/2006