ST 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Symbol Value Unit Collector Base Voltage VCBO 500 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current (DC) IC 0.3 A Total Power Dissipation Ptot 0.75 W Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 C O Parameter DC Current Gain at VCE = 10 V, IC = 0.25 mA at VCE = 20 V, IC = 20 mA Collector Base Cutoff Current at VCB = 500 V Collector Emitter Cutoff Current at VCE = 400 V Emitter Base Cutoff Current at VEB = 9 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA Transition Frequency at VCE = 20 V, IC = 20 mA, f = 1 MHz Fall Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V Storage Time at IC = 50 mA, IB = -IB2 = 5 mA, VCC = 45 V Symbol Min. Max. Unit hFE hFE 5 10 40 - ICBO - 100 µA ICEO - 200 µA IEBO - 100 µA V(BR)CBO 500 - V V(BR)CEO 400 - V V(BR)EBO 9 - V VCE(sat) - 0.5 V VBE(sat) - 1.2 V fT 8 - MHz tf - 0.3 µs ts - 1.5 µs SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 29/08/2008 ST 13001 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 29/08/2008