RENESAS HAF2005

HAF2005
Silicon N Channel MOS FET Series
Power Switching
REJ03G1136-0400
(Previous: ADE-208-688B)
Rev.4.00
Sep 07, 2005
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down
the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
•
•
•
•
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
G
Gate resistor
Temperature
Sensing
Circuit
Latch
Circuit
1. Gate
2. Drain
3. Source
Gate
Shutdown
Circuit
1 2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 7
HAF2005
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
Value
60
Unit
V
VGSS
VGSS
16
–2.5
V
V
ID
Note 1
ID (pulse)
40
80
A
A
IDR
Note 2
Pch
40
30
A
W
Tch
Tstg
150
–55 to +150
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Ta = 25°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Rev.4.00 Sep 07, 2005 page 2 of 7
Symbol
VIH
Min
3.5
Typ
—
Max
—
Unit
V
Test Conditions
VIL
IIH1
—
—
—
—
1.2
100
V
µA
Vi = 8 V, VDS = 0
IIH2
IIL
—
—
—
—
50
1
µA
µA
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
IIH (sd) 1
IIH (sd) 2
—
—
0.8
0.35
—
—
mA
mA
Vi = 8 V, VDS = 0
Vi = 3.5 V, VDS = 0
Tsd
VOP
—
3.5
175
—
—
12
°C
V
Channel temperature
HAF2005
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
ID1
Min
15
Typ
—
Max
—
Unit
A
Test Conditions
VGS = 3.5 V, VDS = 2 V
ID2
—
—
10
—
mA
V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS = 0
Drain to source breakdown voltage
V (BR) DSS
—
60
Gate to source breakdown voltage
V (BR) GSS
V (BR) GSS
16
–2.5
—
—
—
—
V
V
IG = 300 µA, VDS = 0
IG = –100 µA, VDS = 0
IGSS1
IGSS2
—
—
—
—
100
50
µA
µA
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
IGSS3
IGSS4
—
—
—
—
1
–100
µA
µA
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
Input current (shut down)
IGS (op) 1
IGS (op) 2
—
—
0.8
0.35
—
—
mA
mA
VGS = 8 V, VDS = 0
VGS = 3.5 V, VDS = 0
Zero gate voltage drain current
Gate to source cutoff voltage
IDSS
VGS (off)
—
1.0
—
—
10
2.25
µA
V
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
Static drain to source on state resistance
RDS (on)
RDS (on)
—
—
25
15
33
20
mΩ
mΩ
ID = 20 A, VGS = 4 V
Note 3
ID = 20 A, VGS = 10 V
Forward transfer admittance
Output capacitance
|yfs|
Coss
8
—
16
940
—
—
S
pF
Turn-on delay time
td (on)
—
10.7
—
µs
Rise time
Turn-off delay time
tr
td (off)
—
—
66
15.5
—
—
µs
µs
ID = 20 A, VDS = 10 V
VDS = 10 V, VGS = 0
f = 1 MHz
ID = 20 A
VGS = 5 V
RL = 1.5 Ω
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
19
1
—
—
µs
V
trr
—
200
—
ns
tos1
—
1
—
ms
Gate to source leak current
Body-drain diode reverse recovery time
Over load shut down operation time
Note4
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Rev.4.00 Sep 07, 2005 page 3 of 7
Note 3
Note 3
IF = 40 A, VGS = 0
IF = 40 A, VGS = 0
diF/dt = 50 A/µs
VGS = 5 V, VDD = 16 V
HAF2005
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
Thermal shut down
200 Operation area
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
0
50
100
150
Case Temperature
10
50
20
DC
10
5
200
Drain Current
40
µs
er
at
10
5
10
20
50 100
Tc = –25°C
25°C
30
4V
40
0
50
ID (A)
60
s
Typical Transfer Characteristics
Drain Current
ID (A)
80
=
m
Drain to Source Voltage VDS (V)
Tc (°C)
Pulse Test
8V
6V
5V
10 V
Op
1
m
s
Operation in
ion
(T
this area is
c=
2
limited by RDS (on)
25
°C
1
)
Typical Output Characteristics
100
PW
0.5 Ta = 25°C
0.3
0.3 0.5 1
2
0
10 µs
100
VGS = 3.5 V
20
75°C
20
10
VDS = 10 V
Pulse Test
0
0
0
2
4
6
Drain to Source Voltage
8
10
0
0.4
ID = 20 A
0.3
0.2
10 A
0.1
5A
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Rev.4.00 Sep 07, 2005 page 4 of 7
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source Saturation Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
2
Gate to Source Voltage
VDS (V)
0.5
1
50
VGS = 4 V
20
10 V
10
5
2
Pulse Test
1
1
2
5
10
20
Drain Current
50 100 200
ID (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
5 A, 10 A
ID = 20 A
0.04
VGS = 4 V
ID = 20 A
0.02
5 A, 10 A
10 V
0
–40
0
40
80
Case Temperature
120
160
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAF2005
100
VDS = 10 V
Pulse Test
50
Tc = –25°C
20
10
25°C
75°C
5
2
1
0.5
Tc (°C)
500
500
Switching Time t (ns)
Reverse Recovery Time trr (ns)
1000
200
100
50
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
1
2
5
10
Reverse Drain Current
20
10
50
20
VGS = 5 V, VDD = 30 V
PW = 300 µs, duty ≤ 1 %
200
100
tr
50
tf
20
td(off)
td(on)
10
0.5
50
IDR (A)
1
2
5
10
Drain Current
20
50
ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Reverse Drain Current vs.
Source to Drain Voltage
50
10000
Pulse Test
40
Capacitance C (pF)
Reverse Drain Current IDR (A)
5
Switching Characteristics
1000
10
0.5
2
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
20
1
VGS = 5 V
30
0V
20
10
3000
1000
Coss
300
100
30
0
VGS = 0
f = 1 MHz
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Rev.4.00 Sep 07, 2005 page 5 of 7
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
HAF2005
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
12
10
VDD = 9 V
8
6
16 V
4
2
0
0.1
1
10
100
200
180
160
140
120
ID = 5 A
100
0
2
4
6
8
Gate to Source Voltage
Shutdown Time of Load-Short Test PW (S)
10
VGS (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
0.1 0.1
0.05
0.03
D=
PDM
0.02
0.01
1
sh
p
ot
0.01
10 µ
uls
e
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
5V
50 Ω
VDD
= 30 V
10%
90%
td(on)
Rev.4.00 Sep 07, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAF2005
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
SC-67
PRSS0003AD-A
TO-220FM / TO-220FMV
1.8g
Unit: mm
10.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
2.5 ± 0.2
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
2.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
5.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
7.0 ± 0.3
0.5 ± 0.1
Ordering Information
Part Name
Quantity
Shipping Container
HAF2005-90
Max: 50 pcs/sack
Sack
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .3.0