2SJ483 Silicon P Channel MOS FET REJ03G0867-0200 (Previous: ADE-208-519) Rev.2.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.08 Ω typ (at VGS = –10 V, ID = –2.5 A) • 4 V gate drive devices. • Large current capacitance ID = –5 A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source 2. Drain 3. Gate G 32 Rev.2.00 Sep 07, 2005 page 1 of 6 1 S 2SJ483 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Value –30 Unit V VGSS ID ±20 –5 V A –20 –5 A A ID (pulse) IDR Note 1 Channel dissipation Channel temperature Pch Tch 0.9 150 W °C Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V (BR) DSS V (BR) GSS –30 ±20 20 — — — — V V ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 IDSS IGSS — — — — –10 ±10 µA µ µ µA VDS = –30 V, VGS = 0 VGS = ±16 V, VDS = 0 Gate to source cutoff voltage Static drain to source on state resistance VGS (off) RDS (on) –1.0 — — 0.08 –2.0 0.11 V Ω ID = –1 mA, VDS = –10 V Note 2 ID = –2.5 A, VGS = –10 V Forward transfer admittance RDS (on) |yfs| — 3 0.12 5 0.17 — Ω S ID = –2.5 A, VGS = –4 V Note 2 ID = –2.5 A, VDS = –10 V Input capacitance Output capacitance Ciss Coss — — 630 390 — — pF pF Reverse transfer capacitance Turn-on delay time Crss td (on) — — 135 15 — — pF ns VDS = –10 V VGS = 0 f = 1 MHz Rise time Turn-off delay time tr td (off) — — 70 65 — — ns ns Fall time Body to drain diode forward voltage tf VDF — — 60 –1.0 — — ns V trr — 60 — ns Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Body to drain diode reverse recovery time Note: 2. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test Conditions Note 2 VGS = –10 V ID = –2.5 A RL = 4 Ω IF = –5 A, VGS = 0 IF = –5 A, VGS = 0 diF/dt = 20 A/µs 2SJ483 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating –100 –1 –0.3 Operation in this area is limited by RDS (on) t ra –0.1 ID (A) –0.03 0 0 50 100 Ambient Temperature Ta = 25°C –0.01 –0.01 –0.03 –0.1 –0.3 –1 –3 –10 –30 –100 200 150 Ta (°C) Drain to Source Voltage Typical Output Characteristics –10 Ta = 25°C Pulse Test –3 V Drain Current –6 VDS = –10 V Pulse Test ID (A) –5 V –4 V –3.5 V –8 VDS (V) Typical Transfer Characteristics –10 V –6 V –8 –6 –4 VGS = –2.5 V –2 Drain Current ID (A) –10 n io 0.4 –3 pe O Drain Current 0.8 –10 100 µs s s m t) m 1 10 o = 1 sh ( 1.2 C D Channel Dissipation 10 µs –30 PW Pch (W) 1.6 –4 25°C –2 Tc = 75°C –25°C 0 0 –2 –4 –6 –10 Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 Ta = 25°C Pulse Test –0.8 –0.6 ID = –5 A –0.4 –0.2 –2 A –1 A 0 0 –4 –8 –12 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 6 –16 –20 VGS (V) 0 –1 –2 –3 –4 Gate to Source Voltage VDS (V) –5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Voltage –8 0 10 3 Ta = 25°C Pulse Test 1 0.3 VGS = –4 V 0.1 –10 V 0.03 0.01 –0.1 –0.3 –1 –3 Drain Current –10 –30 ID (A) –100 2SJ483 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 ID = –5 A 0.3 VGS = –4 V –1 A, –2 A 0.2 –1 A, –2 A, –5 A 0.1 –10 V 0 –40 0 40 80 Case Temperature 120 160 50 VDS = –10 V Pulse Test 20 10 Tc = –25°C 5 25°C 2 1 0.5 –0.1 Tc (°C) 200 2000 Capacitance C (pF) Reverse Recovery Time trr (ns) 5000 100 50 20 di / dt = 20 A / µs VGS = 0, Ta = 25°C –0.5 –1 –2 Reverse Drain Current –5 Crss 200 –12 –40 –16 –50 0 8 16 Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 6 24 32 Qg (nc) –8 –12 –16 –20 –20 40 VGS (V) 500 Switching Time t (ns) VGS Gate to Source Voltage VDS (V) Drain to Source Voltage –8 VDD = –25 V –10 V –5 V Coss Switching Characteristics –4 –30 –10 Drain to Source Voltage VDS (V) ID = –5 A VDS –5 Ciss IDR (A) 0 –20 –2 500 100 V = 0 GS f = 1 MHz 50 0 –4 –10 0 –10 –1 1000 Dynamic Input Characteristics VDD = –5 V –10 V –25 V –0.5 Typical Capacitance vs. Drain to Source Voltage 500 5 –0.1 –0.2 –0.2 Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 10 75°C 200 td(off) 100 tf 50 tr 20 td(on) 10 VGS = –10 V, VDD = –10 V duty ≤ 1 % 5 –0.1 –0.2 –0.5 –1 Drain Current –2 ID (A) –5 –10 2SJ483 Reverse Drain Current vs. Source to Drain Voltage –10 Reverse Drain Current IDR (A) Pulse Test –8 –10 V –6 –5 V –4 VGS = 0, 5 V –2 0 0 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage VSD –2.0 (V) Switching Time Test Circuit Waveform Vin Vout Monitor Vin Monitor 10% D.U.T. 90% RL 90% 90% Vin –10 V 50 Ω VDD = –10 V Vout td(on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 10% td(off) tf 2SJ483 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name Quantity Shipping Container 2SJ483TZ-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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