SPGN0365A /SPGP0365 A

SPGP0365A/SPGN0365A
( SEMIHOW POWER SWITCH )
FEATURES
APPLICATION
‰ Variable frequency operation
‰ SMPS for STB, SVR, DVD & DVCD
‰ Low Start-up Current(Typ.100uA )
‰ Pulse by Pulse Current Limiting
‰ SMPS for Printer, Facsimile & Scanner
‰ Adaptor
‰ Over Current Protection
‰ Over Voltage Protection (Min. 20)
‰ Internal Thermal Shutdown Function
‰ Under Voltage Lockout
TO-220F-4L
TO-220F-4L
(SPGP0365A)
(SPGN0365A)
‰ Internal High Voltage Sense FET
‰ Auto-Restart Mode
‰ Frequency Modulation for low EMI
‰ Advanced Burst-Mode Operation
1
1. GND 2. Drain 3. Vcc 4. FB
1.6.7.8 Drain 2. GND
3. Vcc 4. FB 5. NC
DESCRIPTION
The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.
The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC.
It has a basic platform well suited for the cost effective design in either a flyback converter
INTERNAL BLOCK DIAGRAM
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SPGN0365A/SPGP0365A
June 2014
Ta=25qC, unless otherwise specified
SPGP0365A
Symbol
Parameter
Drain-Source Voltage
VDSS
Value
Units
650
V
Drain Current
– Continuous (TC = 25୅)
3.0
A
Drain Current
– Continuous (TC = 100୅)
2.4
A
IDM
Drain Current
– Pulsed
12
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
248
mJ
VCC(MAX)
Maximum Supply voltage
20
V
VFB
Analog Input Voltage Range
-0.3 To VSD
V
PD
Power Dissipation (TC = 25୅)
– Derate above 25୅
TJ
ID
(Note1)
(Note2)
75
W
0.6
W/୅
Operating Junction Temperature
+160
୅
TA
Operating Ambient Temperature
-25 to +85
୅
TSTG
Storage Temperature Range
-55 to +150
୅
Value
Units
650
V
SPGN0365A
Symbol
VDSS
Parameter
Drain-Source Voltage
Drain Current
– Continuous (TC = 25୅)
0.42
A
Drain Current
– Continuous (TC = 100୅)
0.28
A
IDM
Drain Current
– Pulsed
3
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
127
mJ
VCC(MAX)
Maximum Supply voltage
20
V
VFB
Analog Input Voltage Range
-0.3 To VSD
V
PD
Power Dissipation (TC = 25୅)
– Derate above 25୅
TJ
ID
(Note1)
(Note2)
1.56
W
0.0125
W/୅
Operating Junction Temperature
+160
୅
TA
Operating Ambient Temperature
-25 to +85
୅
TSTG
Storage Temperature Range
-55 to +150
୅
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=51mH, IAS=3.0A, VDD=50V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡
SPGN0365A/SPGP0365A
Absolute Maximum Ratings
Ta=25qC, unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
--
3.0
3.75
Ÿ
650
--
--
V
VDS = 650 V, VGS = 0 V
--
--
50
ᒺ
VDS = 520 V, TC = 125୅
--
--
200
ᒺ
--
450
580
ᓂ
--
55
72
ᓂ
--
12
15.5
ᓂ
--
18
--
ᓩ
--
15
--
ᓩ
--
80
--
ᓩ
--
30
--
ᓩ
--
13
17
nC
--
2.5
--
nC
--
5.5
--
nC
On Characteristics
Static Drain-Source
On-Resistance
RDS(ON)
VGS = 10 V, ID = 1.5 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 50 ᒺ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
Tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 325 V, ID = 3.0 A,
RG = 25 Ÿ
VDS = 325V, ID = 3.0 A,
VGS = 10 V
Notes :
1. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
2.
S
1
R
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SPGN0365A/SPGP0365A
Electrical Characteristics ( SenseFET Part )
Ta=25qC, unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
UVLO Section
VSTART
Start Threshold Voltage
VFB = GND
14
15
16
V
VSTOP
Stop Threshold Voltage
VFB = GND
8.4
9
9.6
V
57
64
71
KHz
--
r5
r10
%
73
77
82
%
Oscillator Section
FOSC
-DMAX
Initial Accuracy
Frequency Change With
Temperature (Note 2)
-25πC d Ta d +85πC
Maximum Duty Cycle
FEEDBACK Section
IFB
Feedback Source Current
Ta=25πC, 0V<Vfb<3V
0.7
0.9
1.1
mA
VSD
Shutdown Feedback Voltage
Vfb>6.5V
5.4
6
6.6
V
Idelay
Shutdown Delay Current
Ta=25πC, 5V”9IE”9SD
4
5
6
mA
4.8
5
5.2
V
--
0.3
0.6
mV/πC
1.62
2.0
2.38
A
20
--
23
V
140
160
--
πC
Reference Section
VREF
Reference Output Voltage (Note1) Ta=25πC
Vref/'T Temperature Stability (Note1 , 2)
IOVER
Peak Current Limit
-25πC d Ta d +85πC
Max. inductor current
Protection Section
VOVP
Over Voltage Protection
TSD
Thermal Shutdown Temperature
(Tj) (Note1)
VCC > 20V
--
Protection Section
ISTART
IOP
Start-up Current
VCC = 14V
--
100
170
ᒺ
Operating Supply Current
(Control Part Only)
VCC < 20V
--
3
6
mA
Notes :
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
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SPGN0365A/SPGP0365A
Electrical Characteristics ( Control Part )
(SPGP0365A)
10
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
ID, Drain Current [A]
ID, Drain Current [A]
101
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
100
150oC
1
25oC
-25oC
0.1
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
10
IDR, Reverse Drain Current [A]
8
RDS(ON) [:],
Drain-Source On-Resistance
* Notes :
1. VDS= 30V
2. 300us Pulse Test
6
VGS = 10V
4
VGS = 20V
2
1
0.1
25oC
150oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
0.01
0
0
2
4
0.4
6
0.6
Capacitances [pF]
800
Ciss
Coss
400
1.2
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
12
VDS = 130V
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
0.8
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
10
VDS = 325V
VDS = 520V
8
6
4
2
* Note : ID = 3.0A
0
10-1
0
100
101
0
3
6
9
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
15
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡
SPGN0365A/SPGP0365A
Typical Characteristics ( SenseFET Part )
(SPGP0365A)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Note :
1. VGS = 0 V
2. ID = 250PA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 1.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
o
TJ, Junction Temperature [ C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
3.0
Operation in This Area
is Limited by R DS(on)
2.5
101
ID, Drain Current [A]
10 ms
100 ms
DC
0
10
10-1
* Notes :
1. TC = 25 oC
10-2
100
2.0
1.5
1.0
0.5
2. TJ = 150 oC
3. Single Pulse
101
102
0.0
25
103
50
75
Figure 9. Maximum Safe Operating Area
100
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
ZTJC(t), Thermal Response
ID, Drain Current [A]
1 ms
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0.2
* Notes :
1. ZTJC(t) = 1.66 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
10-1
0.05
0.02
PDM
0.01
10-2
10-5
t1
single pulse
10-4
10-3
10-2
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡
SPGN0365A/SPGP0365A
Typical Characteristics ( SenseFET Part ) (continued)
(SPGN0365A)
101
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
100
150oC
1
-55oC
25oC
* Notes :
1. VDS= 50V
2. 250us Pulse Test
* Notes :
1. 250us Pulse Test
2. TC = 25oC
100
0.1
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
8.0
7.0
6.5
VGS = 10V
6.0
5.5
5.0
4.5
4.0
101
IDR , Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
7.5
VGS = 20V
3.5
100
150oC
* Note :
1. VGS = 0V
2. 250Ps Pulse Test
Note : TJ = 25 C
3.0
o
2.5
0
1
2
3
4
5
6
7
10-1
0.2
0.4
0.6
800
Ciss
Coss
400
1.2
1.4
* Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
12
VDS = 130V
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1000
0.8
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitances [pF]
25oC
10
VDS = 325V
VDS = 520V
8
6
4
2
* Note : ID = 3.0A
0
10-1
0
10
1
10
0
0
3
6
9
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
15
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡
SPGN0365A/SPGP0365A
Typical Characteristics ( SenseFET Part )
(SPGN0365A)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
Note :
1. VGS = 0 V
2. ID = 250PA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 1.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
0.5
ID, Drain Current [A]
ID, Drain Current [A]
0.4
0.3
0.2
0.1
0.0
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
102
ZTJC(t), Thermal Response
D=0.5
0.2
101
0.1
* Notes :
1. ZTJC(t) = 80 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.05
100
0.02
0.01
PDM
single pulse
10-1
10-5
10-4
t1
10-3
10-2
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡
SPGN0365A/SPGP0365A
Typical Characteristics ( SenseFET Part ) (continued)
(continued)
(These characteristic graphs are normalized at Ta=25qC)
1.20
1.20
1.15
1.15
1.10
1.10
1.05
Fosc
1.05
Ifb
1.00
1.00
0.95
0.95
0.90
0.90
0.85
0.80
-25
0.85
0
25
50
75
100
125
0.80
-25
150
Figure 1. Operating Frequency
1.20
2.0
1.15
1.8
1.10
1.6
75
100
125
150
1.2
0.95
1.0
0.90
0.8
0.85
0.6
0
25
50
75
100
125
150
Figure 3. Operating Supply Current
0.4
-25
1.20
1.15
1.15
1.10
1.10
1.05
1.05
Vstart1.00
Vstop1.00
0.95
0.95
0.90
0.90
0.85
0
25
50
75
100
125
150
125
150
Figure 4. Start up Current
1.20
0.80
-25
50
1.4
Istart
1.00
0.80
-25
25
Figure 2. Feedback Source Current
1.05
Iop
0
0.85
0
25
50
75
100
125
150
Figure 5. Start Threshold Voltage
0.80
-25
0
25
50
75
100
Figure 6. Stop Threshold Voltage
1.20
1.15
1.10
1.05
Vovp 1.00
0.95
0.90
0.85
0.80
-25
0
25
50
75
100
125
150
Figure 7. Over Voltage Protection
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡
SPGN0365A/SPGP0365A
Typical Performance Characteristics ( Control Part )
SPGN0365A/SPGP0365A
Package Dimension
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡
SPGN0365A/SPGP0365A
Package Dimension
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͥ͑͢͡