= 600 V IT(RMS) = 0.8A Silicon Controlled Rectifier 3.Anode Symbol FEATURES 2.Gate Repetitive Peak Off-State Voltage: 600V 1.Cathode R.M.S On-state Current (IT(RMS)=0.8A) Average On-state Current (IT(AV)=0.5A) Low On-State Voltage (1.2VTyp@ITM) 1. K 2. G 3. A 3 General Description 2 1 HSB100-8 PNPN Devices designed for high volume, line-powered consumer applications such as relay and lamp driver, small motor controls, gate drivers for larger thyristors and sensing and detection circuits. Supplied in and inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. Absolute Maximum Ratings Symbol (Ta=25℃) Parameter Value Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.S On-State Current (All conduction angles) 0.8 A IT(AV) Average On-State Current (Half Sine Wave : TC=74℃) 0.5 A ITSM Surge On-State Current (1/2 Cycle, 60Hz, Peak, Non Repetitive) 10 A I2t Circuit Fusing Considerations (t=8.3mS) 0.415 A2s Forward Peak Gate Power Dissipation (Ta=25℃) 0.1 W PG(AV) Forward Average Gate Power Dissipation (Ta=25℃, t=8.3mS) 0.01 W VRGM Reverse Peak Gate Voltage 5 V IFGM Forward Peak Gate Current 1 A TSTG Storage Temperature Range -40 to +125 ℃ Operating Junction Temperature -40 to +125 ℃ PGM Tj ◎ SEMIHOW REV.1.0 Jan 2007 HSB100-8 VDRM HSB100-8 Symbol (Ta=25℃) Parameter Test Conditions Min Typ Max Units IGT Gate Trigger Current(1) VAK=7V, RL=100Ω 200 uA VGT Gate Trigger Voltage(1) VAK=7V, RL=100Ω, Ta=25℃ VAK=7V, RL=100Ω, Ta=-40℃ 0.8 1.2 V V VGD Non Trigger Gate Voltage VAK=12V(DC), RL=100Ω, TC=125℃ Holding Current VAK=12V, Gate open, Initiating current=50mA, Ta=25℃ Ta=-40℃ IDRM Repetitive Peak Off-State Current VAK=VDRM or VRRM, TC=25℃ VAK=VDRM or VRRM, TC=125℃ VTM Peak On-State Voltage(2) ITM=1A, Peak IH (1) RGK Current is not included in measurement (2) Forward current applied for 1ms maximum duration, duty cycle ≤ 1% 0.2 V 2 2 5 10 mA mA 10 200 uA uA 1.2 1.7 V Typ Max Units 1.3 ℃/W Thermal Characteristics Symbol Parameter Test Conditions RTH(J-C) Thermal Resistance Junction to Case RTH(J-A) Thermal Resistance Junction to Ambient Min ℃/W 60 Performance Curves Fig 1. HSB100-8 Current Derating (Reference : Case Temperature) Tc, Max allowable Case Temperature (℃) 100 90 DC 70 60˚ 90˚ 120˚ 180˚ 50 0 0.1 0.2 0.3 0.4 IT(AV) Average On-State Current (A) a a=Conduction Angle Case Measurement Point Center of Flat portion a=30˚ 120 a 0.5 Ta, Max allowable Ambient Temperature (℃) a=Conduction Angle 110 Fig 2. HSB100-8 Current Derating (Reference : Ambient Temperature) Typical Printed Circuit Board Mounting 80 DC 60 40 a=30˚ 60˚ 90˚ 120˚ 180˚ 20 0 0.1 0.2 0.3 0.4 IT(AV) Average On-State Current (A) ◎ SEMIHOW REV.1.0 Jan 2007 HSB100-8 Electrical Characteristics HSB100-8 Package Dimensions HSB100-8 (TO-92) Dimension Table Ref Dimension (mm) Min Max A 4.43 4.83 B 4.43 4.83 C 3.46 3.96 C1 0.92 1.12 L 13.97 14.97 a 0.36 0.56 c 2.54(Typ) ◎ SEMIHOW REV.1.0 Jan 2007 HSB100-8 Taping Dimensions 项目 F1、F2 说 明 标准值 左右脚的中心线到中间脚的中心线的距离 2.5 +0.2, -0.1 F 左右脚的中心线之间的距离 5.0 +0.6, -0.2 P 相邻两只管的中间脚之间的距离 12.7±0.5 P1 孔中心到右脚的垂直距离 3.85±0.5 P2 孔中心到中间脚的垂直距离 6.35±0.5 H0 孔中心到成形处的垂直距离 16.0±0.5 H 孔中心到塑封体下缘的垂直距离 19.5±1 H1 孔中心到塑封体上缘的垂直距离 Max27 W0 热熔胶带宽度 6.0±0.5 W1 孔中心到线带上缘的距离 9.0±0.5 W 线带宽度 W2 热熔胶带和线带的高度之差 D0 孔径 18.0+1.0, -0.5 Max1.0 4.0±0.2 ◎ SEMIHOW REV.1.0 Jan 2007