SEMIHOW HSB100-6

HSB100-6
HSB100-6
◎ SEMIHOW REV.A0,Dec 2007
HSB100-6
HSB100-6
Sensitive Gate
Silicon Controlled Rectifiers
VDRM
= 400V
IT(RMS) = 0.8A
Features
• Repetitive Peak Off-State Voltage : 400V
• R.M.S On-State Current(IT(RMS)=0.8A)
• Low On-State Voltage (1.2V(Typ.)@ ITM)
TO-92
General Description
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls,
gate drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily
adaptable for use in automatic insertion equipment.
A
K
Absolute Maximum Ratings
Symbol
G
TC=25℃ unless otherwise specified
Parameter
Value
Units
VDRM
Repetitive Peak Off-State Voltage
400
V
IT(RMS)
R.M.S On-State Current (All conduction angles)
0.8
A
IT(AV)
Average On-State Current
(Half Sine Wave : TC=74℃)
0.5
A
ITSM
Surge On-State Current
(1/2 Cycle, 60Hz, Peak, Non Repetitive)
10
A
I2t
Circuit Fusing Considerations (t=8.3mS)
0.415
A2s
Forward Peak Gate Power Dissipation (Ta=25℃)
0.1
W
PG(AV)
Forward Average Gate Power Dissipation
(Ta=25℃, t=8.3mS)
0.01
W
VRGM
Reverse Peak Gate Voltage
5
V
IFGM
Forward Peak Gate Current
1
A
TSTG
Storage Temperature Range
-40 ~ 125
℃
Operating Junction Temperature
-40 ~ 125
℃
PGM
Tj
◎ SEMIHOW REV.A0,Dec 2007
HSB100-6
HSB100-6
Electrical Characteristics
Symbol
(Ta=25℃)
Parameter
Test Conditions
(1)
Max
Units
VAK=7V, RL=100Ω
200
㎂
0.8
1.2
V
V
IGT
Gate Trigger Current
VGT
Gate Trigger Voltage(1)
VAK=7V, RL=100Ω, Ta=25℃
VAK=7V, RL=100Ω, Ta=-40℃
VGD
Non Trigger Gate
Voltage
VAK=12V, RL=100Ω, TC=125℃
Holding Current
VAK=12V, Gate open,
Initiating current=50mA,
Ta=25℃
Ta=-40℃
IDRM
Repetitive Peak
Off-State Current
VAK=VDRM or VRRM, TC=25℃
VAK=VDRM or VRRM, TC=125℃
VTM
Peak On-State
Voltage(2)
ITM=1A, Peak
IH
(1)
(2)
Min
Typ
0.2
V
2
5
10
㎃
㎃
10
200
㎂
㎂
1.2
1.7
V
Typ
Max
Units
1.3
℃/W
RGK Current is not included in measurement
Forward current applied for 1ms maximum duration, duty cycle ≤ 1%
Thermal Characteristics
Symbol
Parameter
Test Conditions
RTH(J-C)
Thermal Resistance
Junction to Case
RTH(J-A)
Thermal Resistance
Junction to Ambient
Min
60
℃/W
Performance Curves
Fig 1. HSB100-6 Current Derating
(Reference : Case Temperature)
Fig 2. HSB100-6 Current Derating
(Reference : Ambient Temperature)
◎ SEMIHOW REV.A0,Dec 2007
HSB100-6
Package Dimension
TO-92
3.71±0.2
4.58±0.25
3°
4.58±0.25
4°
14.47±0.5
0.46±0.1
1.27typ
3.6±0.25
1.02±0.1
3.71±0.25
1.27typ
Dimensions in Millimeters
◎ SEMIHOW REV.A0,Dec 2007
HSB100-6
Package Dimension
W
W1
W0
H0
H
W2
H1
TO-92 TAPING
D0
F1 F2
P1
Item
P
P2
Symbol
Dimension [mm]
Reference
Tolerance
Component pitch
P
12.7
±0.5
Side lead to center of feed hole
P1
3.85
±0.5
Center lead to center of feed hole
P2
6.35
±0.5
FI,F2
2.5
+0.2/-0.1
Carrier Tape width
W
18.0
+1.0/-0.5
Adhesive tape width
W0
6.0
±0.5
Tape feed hole location
W1
9.0
±0.5
Adhesive tape position
W2
Lead pitch
1.0 MAX
Center of feed hole to bottom of component
H
19.5
±1
Center of feed hole to lead form
H0
16.0
±0.5
Component height
H1
Tape feed hole diameter
D0
27.0 max
4.0
±0.2
◎ SEMIHOW REV.A0,Dec 2007