HSB100-6 HSB100-6 ◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 HSB100-6 Sensitive Gate Silicon Controlled Rectifiers VDRM = 400V IT(RMS) = 0.8A Features • Repetitive Peak Off-State Voltage : 400V • R.M.S On-State Current(IT(RMS)=0.8A) • Low On-State Voltage (1.2V(Typ.)@ ITM) TO-92 General Description PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. A K Absolute Maximum Ratings Symbol G TC=25℃ unless otherwise specified Parameter Value Units VDRM Repetitive Peak Off-State Voltage 400 V IT(RMS) R.M.S On-State Current (All conduction angles) 0.8 A IT(AV) Average On-State Current (Half Sine Wave : TC=74℃) 0.5 A ITSM Surge On-State Current (1/2 Cycle, 60Hz, Peak, Non Repetitive) 10 A I2t Circuit Fusing Considerations (t=8.3mS) 0.415 A2s Forward Peak Gate Power Dissipation (Ta=25℃) 0.1 W PG(AV) Forward Average Gate Power Dissipation (Ta=25℃, t=8.3mS) 0.01 W VRGM Reverse Peak Gate Voltage 5 V IFGM Forward Peak Gate Current 1 A TSTG Storage Temperature Range -40 ~ 125 ℃ Operating Junction Temperature -40 ~ 125 ℃ PGM Tj ◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 HSB100-6 Electrical Characteristics Symbol (Ta=25℃) Parameter Test Conditions (1) Max Units VAK=7V, RL=100Ω 200 ㎂ 0.8 1.2 V V IGT Gate Trigger Current VGT Gate Trigger Voltage(1) VAK=7V, RL=100Ω, Ta=25℃ VAK=7V, RL=100Ω, Ta=-40℃ VGD Non Trigger Gate Voltage VAK=12V, RL=100Ω, TC=125℃ Holding Current VAK=12V, Gate open, Initiating current=50mA, Ta=25℃ Ta=-40℃ IDRM Repetitive Peak Off-State Current VAK=VDRM or VRRM, TC=25℃ VAK=VDRM or VRRM, TC=125℃ VTM Peak On-State Voltage(2) ITM=1A, Peak IH (1) (2) Min Typ 0.2 V 2 5 10 ㎃ ㎃ 10 200 ㎂ ㎂ 1.2 1.7 V Typ Max Units 1.3 ℃/W RGK Current is not included in measurement Forward current applied for 1ms maximum duration, duty cycle ≤ 1% Thermal Characteristics Symbol Parameter Test Conditions RTH(J-C) Thermal Resistance Junction to Case RTH(J-A) Thermal Resistance Junction to Ambient Min 60 ℃/W Performance Curves Fig 1. HSB100-6 Current Derating (Reference : Case Temperature) Fig 2. HSB100-6 Current Derating (Reference : Ambient Temperature) ◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 Package Dimension TO-92 3.71±0.2 4.58±0.25 3° 4.58±0.25 4° 14.47±0.5 0.46±0.1 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 1.27typ Dimensions in Millimeters ◎ SEMIHOW REV.A0,Dec 2007 HSB100-6 Package Dimension W W1 W0 H0 H W2 H1 TO-92 TAPING D0 F1 F2 P1 Item P P2 Symbol Dimension [mm] Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 Lead pitch 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 Tape feed hole diameter D0 27.0 max 4.0 ±0.2 ◎ SEMIHOW REV.A0,Dec 2007