N65S HFS8N65S

BVDSS = 650 V
RDS(on) typ = 1.16 ȍ
HFS8N65S
ID = 7.2 A
650V N-Channel MOSFET
TO-220F
FEATURES
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Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 22 nC (Typ
(Typ.))
Extended Safe Operating Area
Lower RDS(ON) : 1.16 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
Absolute Maximum Ratings
Symbol
1
2
3
1.Gate 2. Drain 3. Source
TC=25୅ unless otherwise specified
Parameter
Value
Units
650
V
VDSS
Drain Source Voltage
Drain-Source
ID
Drain Current
– Continuous (TC = 25ఁ͚
7.2*
A
Drain Current
– Continuous (TC = 100ఁ͚
4.3*
A
IDM
Drain Current
– Pulsed
28.8*
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
210
mJ
IAR
Avalanche Current
(Note 1)
72
7.2
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
48
W
0.38
W/ఁ
-55 to +150
ఁ
300
ఁ
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
2.6
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡
HFS8N65S
Sep 2009
Symbol
y
Parameter
unless otherwise specified
Test Conditions
Min
Typ
y
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.6 A
--
1.16
1.4
‫ש‬
VGS = 0 V
V, ID = 250 Ꮃ
650
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
--
0.65
--
·͠ఁ
VDS = 650 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 520 V, TC = 125ఁ
--
--
10
Ꮃ
Off Characteristics
BVDSS
D i S
Drain-Source
Breakdown
B kd
V
Voltage
lt
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ
IGSSR
G t B d L
Gate-Body
Leakage
k
C
Current,
t
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ
--
940
1220
Ꮔ
--
105
135
Ꮔ
--
13
17
Ꮔ
--
17
45
Ꭸ
--
61
130
Ꭸ
--
81
170
Ꭸ
--
65
140
Ꭸ
--
22
29
Οʹ
--
5
--
Οʹ
--
9
--
Οʹ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 325 V, ID = 7.2 A,
RG = 25 ‫ש‬
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 520V, ID = 7.2 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
7.2
ISM
Pulsed Source-Drain Diode Forward Current
--
--
28.8
VSD
Source-Drain
Source
Drain Diode Forward Voltage
IS = 7.2
72A
A, VGS = 0 V
--
--
14
1.4
V
trr
Reverse Recovery Time
--
365
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 7.2 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
3.4
--
ȝC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7.3mH, IAS=7.2A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”7.2A, di/dt”200A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4 P
4.
Pulse
l T
Testt : Pulse
P l Width ” 300ȝs,
300
D
Duty
t C
Cycle
l ” 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡
HFS8N65S
Electrical Characteristics TC=25 qC
HFS8N65S
ID, Dra
ain Current [A]
ID, Dra
ain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
2.5
1
IDR, Reverse D
Drain Current [A]
RDDS(ON) [:],
Drain-Sourc
ce On-Resistance
10
2.0
VGS = 10V
VGS = 20V
1.5
1.0
o
Note : TJ = 25 C
0
10
o
150 C
o
25 C
Note :
1. VGS = 0V
2. 250Ps Pulse Test
-1
0.5
0
3
6
9
12
10
15
0.2
0.4
ID, Drain Current [A]
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Capa
acitance [pF]
VGS, Gate--Source Voltage [V]
12
VDS = 130V
10
VDS = 325V
VDS = 520V
8
6
4
2
* Note : ID=7.2A
0
0
4
8
12
16
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
24
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡
(continued)
1.2
2.5
RDS(ON), (Normalized)
Drain-Sourc
ce On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFS8N65S
Typical Characteristics
1.1
1.0
Note :
0.9
1. VGS = 0 V
2. ID = 250PA
2.0
1.5
1.0
0.5
Note :
1. VGS = 10 V
2. ID = 3.6 A
0.8
-100
-50
0
50
100
150
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
8
Operation in This Area
is Limited by R DS(on)
2
10
10 Ps
6
ID, Drain
n Current [A]
10
1 ms
10 ms
100 ms
0
DC
10
-1
10
* Notes :
o
1. TC = 25 C
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
0
1
10
2
10
0
25
3
10
10
50
75
(t), Therrmal Response
125
150
TC, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
10
100
o
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs Case Temperature
p
D = 0 .5
0
0 .2
* N o te s :
1 . Z T J C ( t ) = 2 .6
0 .1
10
o
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
0 .0 5
3 . T J M - T C = P D M * Z T J C ( t)
-1
0 .0 2
PDM
0 .0 1
TJC
10
Z
ID, Drain Current [A]
100 Ps
1
t1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11. Transient Thermal Response Curve
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡
HFS8N65S
Fig 12. Gate Charge Test Circuit & Waveform
50Kȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡
HFS8N65S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
G
Gate
Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡
HFS8N65S
Package Dimension
{vT
{v
TYYWm
±0.20
±0.20
.20
±0
±0 20
2 54±0.20
2.54
6.68±0.20
0.70±0.20
12.42±0.20
3.30±±0.20
±0 20
2.76
2
76±0.20
1.47max
9.75±0.20
15.87±00.20
.1 8
3
ij
0 20
0.80
0
80±0.20
0 20
0.50
0
50±0.20
2.54typ
2.54typ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡