BVDSS = 650 V RDS(on) typ = 1.16 ȍ HFS8N65S ID = 7.2 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ (Typ.)) Extended Safe Operating Area Lower RDS(ON) : 1.16 ȍ (Typ.) @VGS=10V 100% Avalanche Tested Absolute Maximum Ratings Symbol 1 2 3 1.Gate 2. Drain 3. Source TC=25 unless otherwise specified Parameter Value Units 650 V VDSS Drain Source Voltage Drain-Source ID Drain Current – Continuous (TC = 25ఁ͚ 7.2* A Drain Current – Continuous (TC = 100ఁ͚ 4.3* A IDM Drain Current – Pulsed 28.8* A VGS Gate-Source Voltage ρ30 V EAS Single Pulsed Avalanche Energy (Note 2) 210 mJ IAR Avalanche Current (Note 1) 72 7.2 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25ఁ͚ ͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ (Note 1) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 48 W 0.38 W/ఁ -55 to +150 ఁ 300 ఁ * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RșJC Symbol Junction-to-Case Parameter -- 2.6 RșJA Junction-to-Ambient -- 62.5 Units ఁ͠Έ క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡ HFS8N65S Sep 2009 Symbol y Parameter unless otherwise specified Test Conditions Min Typ y Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 Ꮃ 2.5 -- 4.5 V Static Drain-Source On-Resistance VGS = 10 V, ID = 3.6 A -- 1.16 1.4 ש VGS = 0 V V, ID = 250 Ꮃ 650 -- -- V ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ -- 0.65 -- ·͠ఁ VDS = 650 V, VGS = 0 V -- -- 1 Ꮃ VDS = 520 V, TC = 125ఁ -- -- 10 Ꮃ Off Characteristics BVDSS D i S Drain-Source Breakdown B kd V Voltage lt ԩBVDSS Breakdown Voltage Temperature Coefficient /ԩTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 Ꮂ IGSSR G t B d L Gate-Body Leakage k C Current, t Reverse VGS = -30 V, VDS = 0 V -- -- -100 Ꮂ -- 940 1220 Ꮔ -- 105 135 Ꮔ -- 13 17 Ꮔ -- 17 45 Ꭸ -- 61 130 Ꭸ -- 81 170 Ꭸ -- 65 140 Ꭸ -- 22 29 Οʹ -- 5 -- Οʹ -- 9 -- Οʹ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 325 V, ID = 7.2 A, RG = 25 ש ͙ͿΠΥΖ͚͑ͥͦ͝ VDS = 520V, ID = 7.2 A, VGS = 10 V ͙ͿΠΥΖ͚͑ͥͦ͝ Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 7.2 ISM Pulsed Source-Drain Diode Forward Current -- -- 28.8 VSD Source-Drain Source Drain Diode Forward Voltage IS = 7.2 72A A, VGS = 0 V -- -- 14 1.4 V trr Reverse Recovery Time -- 365 -- Ꭸ Qrr Reverse Recovery Charge IS = 7.2 A, VGS = 0 V diF/dt = 100 A/ȝs (Note 4) -- 3.4 -- ȝC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=7.3mH, IAS=7.2A, VDD=50V, RG=25:, Starting TJ =25qC 3. ISD7.2A, di/dt200A/ȝs, VDDBVDSS , Starting TJ =25 qC 4 P 4. Pulse l T Testt : Pulse P l Width 300ȝs, 300 D Duty t C Cycle l 2% 5. Essentially Independent of Operating Temperature క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡ HFS8N65S Electrical Characteristics TC=25 qC HFS8N65S ID, Dra ain Current [A] ID, Dra ain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics 2.5 1 IDR, Reverse D Drain Current [A] RDDS(ON) [:], Drain-Sourc ce On-Resistance 10 2.0 VGS = 10V VGS = 20V 1.5 1.0 o Note : TJ = 25 C 0 10 o 150 C o 25 C Note : 1. VGS = 0V 2. 250Ps Pulse Test -1 0.5 0 3 6 9 12 10 15 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Capa acitance [pF] VGS, Gate--Source Voltage [V] 12 VDS = 130V 10 VDS = 325V VDS = 520V 8 6 4 2 * Note : ID=7.2A 0 0 4 8 12 16 20 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 24 క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡ (continued) 1.2 2.5 RDS(ON), (Normalized) Drain-Sourc ce On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFS8N65S Typical Characteristics 1.1 1.0 Note : 0.9 1. VGS = 0 V 2. ID = 250PA 2.0 1.5 1.0 0.5 Note : 1. VGS = 10 V 2. ID = 3.6 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 8 Operation in This Area is Limited by R DS(on) 2 10 10 Ps 6 ID, Drain n Current [A] 10 1 ms 10 ms 100 ms 0 DC 10 -1 10 * Notes : o 1. TC = 25 C 4 2 o 2. TJ = 150 C 3. Single Pulse -2 0 1 10 2 10 0 25 3 10 10 50 75 (t), Therrmal Response 125 150 TC, Case Temperature [ C] Figure 9. Maximum Safe Operating Area 10 100 o VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature p D = 0 .5 0 0 .2 * N o te s : 1 . Z T J C ( t ) = 2 .6 0 .1 10 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 0 .0 5 3 . T J M - T C = P D M * Z T J C ( t) -1 0 .0 2 PDM 0 .0 1 TJC 10 Z ID, Drain Current [A] 100 Ps 1 t1 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 t2 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡ HFS8N65S Fig 12. Gate Charge Test Circuit & Waveform 50Kȍ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡ HFS8N65S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period G Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡ HFS8N65S Package Dimension {vT {v TYYWm ±0.20 ±0.20 .20 ±0 ±0 20 2 54±0.20 2.54 6.68±0.20 0.70±0.20 12.42±0.20 3.30±±0.20 ±0 20 2.76 2 76±0.20 1.47max 9.75±0.20 15.87±00.20 .1 8 3 ij 0 20 0.80 0 80±0.20 0 20 0.50 0 50±0.20 2.54typ 2.54typ క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͡͡