BVDSS = 600 V RDS(on) typ = 4.2 Ω HFS2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V 1 2 3 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 600 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 2.0* A Drain Current – Continuous (TC = 100℃) 1.35* A IDM Drain Current – Pulsed 8.0* A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 2.0 A EAR Repetitive Avalanche Energy (Note 1) 5.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 23 W 0.18 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 300 ℃ (Note 1) * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 5.5 RθJA Junction-to-Ambient -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Nov 2007 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 1.0 A -- 4.2 5.0 Ω VGS = 0 V, ID = 250 ㎂ 600 -- -- V ID = 250 ㎂, Referenced to 25℃ -- 0.6 -- V/℃ VDS = 600 V, VGS = 0 V -- -- 1 ㎂ VDS = 480 V, TC = 125℃ -- -- 10 ㎂ Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature Coefficient /ΔTJ IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 ㎁ IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 ㎁ -- 280 365 ㎊ -- 37 48 ㎊ -- 6.0 8.0 ㎊ -- 9 28 ㎱ -- 25 60 ㎱ -- 24 58 ㎱ -- 28 66 ㎱ -- 6.0 8.0 nC -- 1.3 -- nC -- 2.6 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 300 V, ID = 2.0 A, RG = 25 Ω (Note 4,5) VDS = 480V, ID = 2.0 A, VGS = 10 V (Note 4,5) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 2.0 ISM Pulsed Source-Drain Diode Forward Current -- -- 8.0 VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time -- 230 -- ㎱ Qrr Reverse Recovery Charge IS = 2.0 A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 1.0 -- μC A Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 3. ISD≤2.0A, di/dt≤200A/μs, VDD≤BVDSS , Starting TJ =25 °C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Electrical Characteristics TC=25 °C HFS2N60S ID, Drain Current [A] ID, Drain Current [A] Typical Characteristics VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] 9 VGS = 10V 6 VGS = 20V 3 o * Note : TJ = 25 C 0 0 1 2 3 4 5 ID, Drain Current[A] VSD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 12 VGS, Gate-Source Voltage [V] VDS = 120V Capacitance [pF] RDS(ON)[Ω], Drain-Source On-Resistance 12 VDS = 300V 10 VDS = 480V 8 6 4 2 * Note : ID = 2.0A 0 0 2 4 6 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 8 ◎ SEMIHOW REV.A0,Nov 2007 (continued) 1.2 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage HFS2N60S Typical Characteristics 1.1 1.0 * Note : 1. VGS = 0 V 0.9 2. ID = 250 μA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 ∗ Note : 0.5 1. VGS = 10 V 2. ID = 1.0 A 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 100 μs 1.5 ID, Drain Current [A] 1 ms 10 ms 0 10 100 ms DC -1 10 * Notes : o 1. TC = 25 C 1.0 0.5 o 2. TJ = 150 C 3. Single Pulse -2 0 1 10 2 10 0.0 25 3 10 10 50 75 125 150 o Figure 9. Maximum Safe Operating Area 10 100 TC, Case Temperature [ C] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs Case Temperature 1 (t), Thermal Response D = 0 .5 10 0 .2 0 * N o te s : 1 . Z θ J C ( t ) = 5 .5 0 .1 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 0 .0 5 3 . T J M - T C = P D M * Z θ J C ( t) 10 0 .0 2 0 .0 1 -1 θJC 10 PDM s in g le p u ls e t1 Z ID, Drain Current [A] 10 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT 200nF Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,Nov 2007 HFS2N60S Package Dimension TO-220F ±0.20 ±0.20 .20 ±0 2.54±0.20 6.68±0.20 0.70±0.20 12.42±0.20 3.30±0.20 2.76±0.20 1.47max 9.75±0.20 15.87±0.20 .1 8 φ3 0.80±0.20 0.50±0.20 2.54typ 2.54typ ◎ SEMIHOW REV.A0,Nov 2007