2,'$%&) IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V(typ) @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Tight parameter distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package VCES = 600V VCE(on) typ. = 1.10V G @VGE = 15V, IC = 2.0A E n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 14 8.0 18 18 4.0 16 ± 20 38 15 -55 to +150 V A V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient (PCB mount)* Weight Typ. Max. ––– ––– ––– 0.3 (0.01) 3.3 7.0 50 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/30/00 IRG4RC10SD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — Temperature Coeff. of Breakdown Voltage — 0.64 Collector-to-Emitter Saturation Voltage — 1.58 — 2.05 — 1.68 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -9.5 Forward TransconductanceT 3.65 5.48 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.5 — 1.4 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 1.7 IC = 8.0A VGE = 15V — V IC = 14.0A See Fig. 2, 5 — IC = 8.0A, TJ = 150°C 6.0 VCE = V GE, IC = 250µA — mV/°C VCE = V GE, IC = 250µA — S VCE = 100V, IC =8.0A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M /dt Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 — 32 — 815 1200 720 1080 0.31 — 3.28 — 3.60 10.9 1.46 2.6 70 — 36 — 890 — 890 — 3.83 — 7.5 — 280 — 30 — 4.0 — 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 — 235 — nC ns mJ mJ ns mJ nH pF ns A nC A/µs Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150°C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100Ω Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 ƒ = 1.0MHz TJ = 25°C See Fig. TJ = 125°C 14 IF =4.0A TJ = 25°C See Fig. TJ = 125°C 15 VR = 200V TJ = 25°C See Fig. TJ = 125°C 16 di/dt = 200A/µs TJ = 25°C See Fig. TJ = 125°C 17 Details of note Q through T are on the last page 2 www.irf.com IRG4RC10SD 2.50 F o r b o th : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sinkMount, = 9 0 °Ta C = 55°C PCB G a te d riv e a s s p e c ifie d LOAD CURRENT (A) 2.00 P o w e r D is s ip a tio n = 1.4 W 1.50 S q u a re w a v e : 6 0 % o f ra te d v o lta g e 1.00 I 0.50 Id e a l d io d e s 0.00 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 °C TJ = 150 °C 10 V = 15V 80µs PULSE WIDTH GE 1 0.5 1.0 1.5 2.0 2.5 3.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 150 °C 10 TJ = 25 °C V = 50V 5µs PULSE WIDTH CC 5µs PULSE WIDTH 1 6 8 10 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4RC10SD 3.00 16 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE I C = 16 A 2.50 12 2.00 8 IC = 8 A 1.50 4 0 25 50 75 100 125 150 IC = 4 A 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10SD C, Capacitance (pF) 400 Cies VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 300 C oes 200 Cres 100 20 VGE , Gate-to-Emitter Voltage (V) 500 0 1 10 10 5 0 100 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 100 3.50 3.45 3.40 3.35 3.30 40 60 80 RGRG, Gate , GateResistance Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 15 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C 3.55 I C = 8A 20 5 Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 8A 15 VCE , Collector-to-Emitter Voltage (V) 3.60 100 RG =100Ω Ohm VGE = 15V VCC = 480V IC = 16 A 10 IC = 8 A IC = 4 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4RC10SD 100 = 100 100 Ω = 150 ° C = 480V = 15V I C , Collector Current (A) RG TJ VCC 12 VGE 9 6 VGE = 20V T J = 125 oC 10 3 SAFE OPERATING AREA 0 0 4 8 12 16 1 20 1 I C , Collector Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 100 Instantaneous Forward Current ( A ) Total Switching Losses (mJ) 15 TJ = 150°C 10 TJ = 125°C T = 25°C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward V oltage DDrop rop -- VVFM Forward Voltage F M((VV) ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4RC10SD 50 14 I F = 8.0A 45 12 I F = 4.0A VR = 20 0V T J = 1 25 °C T J = 2 5°C I F = 8.0A 10 I F = 4.0A Irr- ( A) trr- (nC) 40 35 8 6 30 4 25 2 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C 20 100 di f /dt - (A/µ s) 0 100 1000 1000 di f /dt - (A/µ s) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 1000 VR = 2 00 V T J = 1 25°C T J = 2 5°C VR = 20 0V T J = 1 25 °C T J = 2 5°C 160 I F = 8.0A di (rec) M/dt- (A /µs) I F = 4.0A Qrr- (nC) 120 I F = 8.0A 80 I F = 4.0A 40 0 100 di f /dt - (A/µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com A 100 100 1000 di f /dt - (A/µ s ) Fig. 17 - Typical di(rec)M/dt vs. dif/dt, 7 IRG4RC10SD Same ty pe device as D .U.T. 430µF 80% of Vce 90% D .U .T. 10% Vge VC 90% t d(off) 10% IC 5% Fig. 18a - Test Circuit for Measurement of tf tr ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs Eon Eoff E ts = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ Ic dt trr id d t tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ Vd Ic dt t4 V d id d t t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4RC10SD V g G AT E SIG NA L DE VIC E U ND E R T E ST CU R RE NT D .U .T. VO L TA G E IN D.U .T. CU R RE NT IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.3 8 (.0 94 ) 2.1 9 (.0 86 ) 6.7 3 (.2 65 ) 6.3 5 (.2 50 ) -A1 .2 7 ( .0 50) 0 .8 8 ( .0 35) 5 .46 (.21 5) 5 .21 (.20 5) 1.1 4 ( .0 45) 0.8 9 ( .0 35) 0.58 (.02 3) 0.46 (.01 8) 4 6.45 (.24 5) 5.68 (.22 4) 6.2 2 (.2 45 ) 5.9 7 (.2 35 ) 1 .0 2 (.04 0) 1 .6 4 (.02 5) 1 2 10 .42 (.41 0) 9.4 0 (.3 70 ) 0.51 (.0 2 0) M IN . -B 1 .5 2 ( .06 0) 1 .1 5 ( .04 5) 1.1 4 (.0 45) 2 X 0.7 6 (.0 30) L E A D A S S IG N M E NT S 1 - G A TE 3 LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR 0.89 (.0 35 ) 3X 0.64 (.0 25 ) 0 .2 5 (.0 10 ) 2 - D R A IN 3 - SOURCE 4 - D R A IN M A M B 0 .5 8 (.0 23) 0 .4 6 (.0 18) 3 - EMITTER 4 - COLLECTOR 2.28 (.0 90 ) 4.57 ( .18 0) N OT E S: 1 D IM EN SIO N IN G & TO L E R AN C IN G PE R A N SI Y 14 .5 M, 19 82. 2 C O N TR O LL ING D IM E N S IO N : IN C H. 3 C O N FO R M S T O JE D E C O U TL IN E TO - 252 A A. 4 D IM EN SIO N S S H OW N A RE B E F O RE S O LD E R D IP , S O L D ER D IP M A X. + 0.16 (.0 06 ). www.irf.com 9 IRG4RC10SD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) RVCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19) SPulse width ≤ 80µs; duty factor ≤ 0.1%. TPulse width 5.0µs, single shot. Tape & Reel Information TO-252AA TR TRR 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 ) F E E D D IR E C T IO N TR L 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) FE E D D IR E C T IO N NOTES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R . 2 . A L L D IM EN S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 1 3 IN C H 16 m m NOTES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com