PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard D2Pak package VCES = 600V VCE(on) typ. = 1.4V G @VGE = 15V, IC = 10A E n-cha nnel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses D 2 Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 19 10 38 38 7.0 38 ± 20 60 24 -55 to +150 V A V W °C Thermal Resistance Parameter RqJC RqJC RqJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient ( PCB Mounted,steady-state)* Weight Typ. Max. ––– ––– ––– 1.44 2.1 3.5 80 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 IRG4BC20SD-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES DV(BR)CES/DTJ VCE(on) VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltageƒ 600 — Temperature Coeff. of Breakdown Voltage — 0.75 Collector-to-Emitter Saturation Voltage — 1.40 — 1.85 — 1.44 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -11 Forward Transconductance 2.0 5.8 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.4 — 1.3 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 1.6 IC = 10A VGE = 15V — V IC = 19A See Fig. 2, 5 — IC = 10A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 10A 250 µA VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 27 4.3 10 62 32 690 480 0.32 2.58 2.90 64 35 980 800 4.33 7.5 550 39 7.1 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 10A 6.5 nC VCC = 400V See Fig. 8 15 VGE = 15V — TJ = 25°C — ns IC = 10A, VCC = 480V 1040 VGE = 15V, RG = 50W 730 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11,18 4.5 — TJ = 150°C, See Fig. 10,11, 18 — ns IC = 10A, VCC = 480V — VGE = 15V, RG = 50W — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 55 ns TJ = 25°C See Fig. 90 TJ = 125°C 14 IF = 8.0A 5.0 A TJ = 25°C See Fig. 8.0 TJ = 125°C 15 VR = 200V 138 nC TJ = 25°C See Fig. 360 TJ = 125°C 16 di/dt = 200Aµs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 www.irf.com IRG4BC20SD-S 3.0 LOAD CURRENT (A) F or b oth: D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified P ow er D is s ipation = 1.7W 2.0 S q u a re w a v e : 60% of rated voltage 1.0 I Id e a l d io d es 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 10 TJ = 150 ° C TJ = 25 ° C 1 0.0 V GE = 15V 20µs PULSE WIDTH 1.0 2.0 3.0 4.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 150 o C 10 TJ = 25 o C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20SD-S 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 20 15 10 5 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 20 A 2.0 IC = 10 A IC = 5.0 5 AA 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20SD-S VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 800 Cies 600 400 Coes 200 Cres 20 VGE , Gate-to-Emitter Voltage (V) 1000 16 12 8 4 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 100 2.9 2.8 2.7 10 20 30 40 RGR, Gate Resistance G, Gate Resistance (W ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C I C = 10A 0 5 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 3.0 VCC = 400V I C = 10A 50 RG = 50W VGE = 15V VCC = 480V IC = 20 A 10 IC = 10 A IC = 5A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20SD-S RG TJ 12 VCC VGE 100 = 50W = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 14 10 8 6 4 2 VGE = 20V T J = 125 o C 10 SAFE OPERATING AREA 0 0 4 8 12 16 1 20 1 I C , Collector Current (A) 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 100 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC20SD-S 100 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 80 60 I F = 8.0A 40 I IR R M - (A ) t rr - (n s) IF = 16A I F = 16A 10 I F = 8.0 A I F = 4.0A I F = 4.0A 20 0 100 1 100 1000 d i f /d t - (A /µ s) 1000 d i f /d t - (A /µ s) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 500 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C d i(re c)M /d t - (A /µ s) Q R R - (n C ) 400 300 I F = 16A 200 I F = 8.0A I F = 4.0A 1000 I F = 8.0 A I F = 16A 100 IF = 4.0A 0 100 d i f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 100 100 1000 d i f /d t - (A /µ s) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4BC20SD-S Same type device as D .U.T. 430µF 80% of Vce 90% D .U .T. 10% Vge VC 90% t d(off) 10% IC 5% Fig. 18a - Test Circuit for Measurement of tf tr ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t d(on) t=5µs E on Eoff E ts = (Eon +Eoff ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Q rr = Ic trr id Ic dtdt tx ∫ +V g tx 10% V c c 10% Irr Vcc D U T V O LT A G E AND CURRENT Vce V pk Irr Vcc 10% Ic Ipk 90% Ic Ic D IO D E R E C O V E R Y W AVEFORMS tr td(on) 5% V c e t1 ∫ t2 c e ieIcdt dt E on = VVce t1 t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc dt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC20SD-S V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* R L= 480V 2 X IC @25°C 0 - 480V 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4BC20SD-S Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 50W (figure 19) Pulse width £ 80µs; duty factor £ 0.1%. Pulse width 5.0µs, single shot. D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 3 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 0.55 (.022) 0.46 (.018) 0.93 (.037) 0.69 (.027) 0.25 (.010) M 8.89 (.350) REF. 1.39 (.055) 1.14 (.045) B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.450) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG NM E N TS 1 - G A TE 2 - D R A IN 3 - S O U RC E 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 9/98 10 www.irf.com