HRD80N06K / HRU80N06K

BVDSS = 60 V
RDS(on) typ Pȍ
HRD80N06K / HRU80N06K
ID = 114 A
60V N-Channel Trench MOSFET
D-PAK
FEATURES
I-PAK
2
‰ Originative New Design
1
1
2
3
‰ Superior Avalanche Rugged Technology
‰ Excellent Switching Characteristics
3
HRD80N06K
HRU80N06K
1.Gate 2. Drain 3. Source
‰ Unrivalled Gate Charge : 90 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 6.3 Pȍ (Typ.) @VGS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
60
V
Drain Current
– Continuous (TC = 25୅)
114 *
A
Drain Current
– Continuous (TC = 100୅)
80 *
A
IDM
Drain Current
– Pulsed
400 *
A
VGS
Gate-Source Voltage
ρ25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
340
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
16
mJ
3
W
160
W
ID
(Note 1)
Power Dissipation (TA = 25୅)*
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
1.07
W/୅
-55 to +175
୅
300
୅
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
0.9
RșJA
Junction-to-Ambient*
--
50
RșJA
Junction-to-Ambient
--
110
Units
୅/W
* When mounted on the minimum pad size recommended (PCB Mount)
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͦ͑͢͡
HRD80N06K_HRU80N06K
Sep 2014
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.2
--
3.8
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 30 A
--
6.3
8
mŸ
Forward Transconductance
VDS = 20, ID = 30 A
--
80
--
S
VGS = 0 V, ID = 250 Ꮃ
60
--
--
V
VDS = 48 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 48 V, TJ = 125୅
--
--
100
Ꮃ
VGS = ρ25 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
4100
--
Ꮔ
--
370
--
Ꮔ
--
260
--
Ꮔ
--
1.6
--
Ÿ
--
55
--
Ꭸ
--
65
--
Ꭸ
--
140
--
Ꭸ
--
50
--
Ꭸ
--
90
--
nC
--
20
--
nC
--
30
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 30 V, ID = 30 A,
RG = 6 Ÿ
VDS = 48 V, ID = 30 A,
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
114
ISM
Pulsed Source-Drain Diode Forward Current
--
--
400
VSD
Source-Drain Diode Forward Voltage
IS = 30 A, VGS = 0 V
--
--
1.3
V
trr
Reverse Recovery Time
--
70
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 30 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
100
--
nC
A
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, IAS=20A, VDD=25V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͦ͑͢͡
HRD80N06K_HRU80N06K
Electrical Characteristics TJ=25 qC
VGS
15 V
10 V
8V
7V
6V
5.5 V
5V
Bottom : 4.5 V
102
100
ID, Drain Current [A]
ID, Drain Current [A]
Top :
100
25oC
1
* Notes :
1. VDS= 20V
2. 300us Pulse Test
* Notes :
1. 300us Pulse Test
2. TC = 25oC
101
175oC
10
0.1
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
9.5
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON) [m:],
Drain-Source On-Resistance
9.0
8.5
8.0
7.5
7.0
6.5
6.0
100
10
175oC 25oC
1
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
5.5
0
50
100
150
200
0.1
0.0
250
0.4
ID, Drain Current [A]
Capacitances [pF]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
4000
3000
* Note ;
1. VGS = 0 V
2. f = 1 MHz
2000
Coss
Crss
1000
0
10-1
100
1.6
2.0
12
VGS, Gate-Source Voltage [V]
Ciss
5000
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
6000
0.8
VSD, Source-Drain Voltage [V]
10
8
6
4
2
VDS = 48V
ID = 30A
101
0
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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HRD80N06K_HRU80N06K
Typical Characteristics
(continued)
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
Note :
1. VGS = 10 V
2. ID = 30 A
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
125
Operation in This Area
is Limited by R DS(on)
103
ID, Drain Current [A]
100
1 ms
10 ms
DC
1
10
* Notes :
1. TC = 25 oC
100
75
50
25
2. TJ = 175 oC
3. Single Pulse
10-1
10-1
100
101
0
25
102
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
ZTJC(t), Thermal Response
ID, Drain Current [A]
100 Ps
102
D=0.5
* Notes :
1. ZTJC(t) = 0.9 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
0.1
-1
10
0.05
0.02
0.01
10-2
10-5
PDM
t1
single pulse
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͦ͑͢͡
HRD80N06K_HRU80N06K
Typical Characteristics
HRD80N06K_HRU80N06K
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
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HRD80N06K_HRU80N06K
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͦ͑͢͡
HRD80N06K_HRU80N06K
Package Dimension
{vTY\YhG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͦ͑͢͡
HRD80N06K_HRU80N06K
Package Dimension
7.0 ρ 0.1 / 9.5 ρ 0.2
{vTY\XhG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΄ΖΡ͑ͣͦ͑͢͡