HFS11N40 - SemiHow

BVDSS = 400 V
RDS(on) typ ȍ
HFS11N40
ID = 11.4 A
400V N-Channel MOSFET
TO-220F
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 35 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
400
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚
11.4*
A
Drain Current
– Continuous (TC = 100ఁ͚
7.2*
A
IDM
Drain Current
– Pulsed
45.6*
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
520
mJ
IAR
Avalanche Current
(Note 1)
11.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
50
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
0.4
W/ఁ
-55 to +150
ఁ
300
ఁ
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
2.5
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
HFS11N40
Dec 2005
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.7 A
--
0.38
0.48
‫ש‬
VGS = 0 V, ID = 250 Ꮃ
400
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
--
0.41
--
·͠ఁ
VDS = 400 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 320 V, TC = 125ఁ
--
--
10
Ꮃ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ
--
1350
1750
Ꮔ
--
180
240
Ꮔ
--
30
39
Ꮔ
--
35
70
Ꭸ
--
120
240
Ꭸ
--
80
160
Ꭸ
--
80
160
Ꭸ
--
35
45
Οʹ
--
7
--
Οʹ
--
17
--
Οʹ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 200 V, ID = 11.4 A,
RG = 25 ‫ש‬
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 320 V, ID = 11.4 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
11.4
ISM
Pulsed Source-Drain Diode Forward Current
--
--
45.6
VSD
Source-Drain Diode Forward Voltage
IS = 11.4 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
--
310
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 11.4 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
2.3
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7mH, IAS=11.4A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
HFS11N40
Electrical Characteristics TC=25 qC
HFS11N40
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2400
Coss
1200
600
䈜㻌㻺㼛㼠㼑㻌㻧
1. VGS = 0 V
2. f = 1 MHz
Crss
VGS, Gate-Source Voltage [V]
Ciss
1800
Capacitances [pF]
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
VDS = 80V
VDS = 200V
10
VDS = 320V
8
6
4
2
䈜㻌㻺㼛㼠㼑㻌㻦㻌㻵D = 11.4 A
0
-1
10
0
0
10
1
10
0
8
16
24
32
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
40
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
HFS11N40
Typical Characteristics
(continued)
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
12
Operation in This Area
is Limited by R DS(on)
2
10
ID, Drain Current [A]
100 Ps
1 ms
10 ms
100 ms
1
10
DC
0
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
10
1
2
10
8
6
4
2
0
25
-2
10
3
10
10
50
75
100
125
150
TC, Case Temperature [ 䉝㼉
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0
10
Zș -&(t), Thermal Response
ID, Drain Current [A]
10
0.2
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 2.5 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
0.1
0.05
-1
10
0.02
PDM
0.01
t1
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
10
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
HFS11N40
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
HFS11N40
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡
HFS11N40
Package Dimension
{vTYYWm
±0.20
±0.20
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
0
0.2
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͡͡