HFP10N80 - SemiHow

BVDSS = 800 V
RDS(on) typ ȍ
HFP10N80
ID = 9.4 A
800V N-Channel MOSFET
TO-220
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 58 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
800
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚͑
9.4
A
Drain Current
– Continuous (TC = 100ఁ͚͑
5.9
A
IDM
Drain Current
– Pulsed
36.0
A
VGS
Gate-Source Voltage
ρͤ͑͡
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
920
mJ
IAR
Avalanche Current
(Note 1)
9.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
19.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
195
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
1.56
W/ఁ͑
-55 to +150
ఁ͑
300
ఁ͑
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
0.64
RșCS
Case-to-Sink
0.5
--
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡
HFP10N80
Dec 2010
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.7 A͑
--
0.92
1.15
‫͑ש‬
VGS = 0 V, ID = 250 Ꮃ͑
800
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
--
0.99
--
·͠ఁ͑
VDS = 800 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 640 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
2800
3600
Ꮔ͑
--
230
300
Ꮔ͑
--
20
25
Ꮔ͑
--
60
120
Ꭸ͑
--
150
300
Ꭸ͑
--
120
240
Ꭸ͑
--
120
240
Ꭸ͑
--
58
75
Οʹ͑
--
17.5
--
Οʹ͑
--
22
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 400 V, ID = 9.4 A,
RG = 25 ‫͑ש‬
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 640V, ID = 9.4 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
9.4
ISM
Pulsed Source-Drain Diode Forward Current
--
--
36.0
VSD
Source-Drain Diode Forward Voltage
IS = 9.4 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
950
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 9.4 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
14.0
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=17.3mH, IAS=10.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡
HFP10N80
Electrical Characteristics TC=25 qC
HFP10N80
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
150oC
-55oC
25oC
0
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
ȝ V3XOVH7HVW
2. TC = 25 䉝
-1
10
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VDS = 50V
ȝ V3XOVH7HVW
-1
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON)>ȍ @
Drain-Source On-Resistance
2.5
2.0
VGS = 10V
VGS = 20V
1.5
1.0
1
10
0
10
150 䉝
25䉝
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0V
ȝ V3XOVH7HVW
䈜㻌㻺㼛㼠㼑㻌㻦㻌㼀J = 25 䉝
-1
0
5
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
4000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3500
Ciss
3000
Capacitance [pF]
10
2500
2000
Coss
1500
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
0
-1
10
VDS = 160V
VGS, Gate-Source Voltage [V]
0.5
10
VDS = 400V
VDS = 640V
8
6
4
2
* Note : ID = 9.4A
0
0
10
1
10
0
10
20
30
40
50
60
70
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. ID ȝ $
0.9
0.8
-100
HFP10N80
Typical Characteristics
-50
0
50
100
150
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
2. ID = 4.7 A
0.5
0.0
-100
200
-50
50
100
150
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
o
10 Ps
8
100 Ps
101
1 ms
10 ms
DC
0
10
10-1
10-2
100
200
10
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
102
* Notes :
1. TC = 25 oC
6
4
2
2. TJ = 150 oC
3. Single Pulse
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
ZTJC(t), Thermal Response
ID, Drain Current [A]
0
TJ, Junction Temperature [ C]
D=0.5
* Notes :
1. ZTJC(t) = 0.64 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
10-1
0.1
0.05
PDM
0.02
single pulse
0.01
t1
10-2
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡
HFP10N80
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡
HFP10N80
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡
HFP10N80
Package Dimension
{vTYYWGOhPG
20
4.50±0.20
1.30±0.20
6.50±0.20
0.
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
±
ij
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
9.90±0.20
0.80±0.20
2.54typ
2.54typ
0.50±0.20
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡
HFP10N80
{vTYYWGOiPG
±0.20
0
.2
±0
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
ij
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣ͑͢͡͡