BVDSS = 80 V RDS(on) typ = 7.0mΩ HRP85N08K ID = 110 A 80V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 75nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 7.0 mΩ (Typ.) @VGS=10V 1 2 3 1.Gate 2. Drain 3. Source 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS TC=25℃ unless otherwise specified Parameter Drain-Source Voltage Value Units 80 V Drain Current – Continuous (TC = 25℃) 110 A Drain Current – Continuous (TC = 100℃) 77 A IDM Drain Current – Pulsed 385 A VGS Gate-Source Voltage ±25 V EAS Single Pulsed Avalanche Energy (Note 2) 385 mJ EAR Repetitive Avalanche Energy (Note 1) 20 mJ PD Power Dissipation (TC = 25℃) - Derate above 25℃ 200 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds ID (Note 1) 1.33 W/℃ -55 to +175 ℃ 300 ℃ Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθCS Case-to-Sink RθJA Junction-to-Ambient Typ. Max. -- 0.75 0.5 -- -- 62.5 Units ℃/W ◎ SEMIHOW REV.A0,December 2014 HRP85N08K December 2014 Symbol Parameter unless otherwise specified Test Conditions Min Typ Max Units On Characteristics VGS RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 ㎂ 2.2 -- 3.8 V Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A -- 7.0 8.5 mΩ Forward Transconductance VDS = 20, ID = 40 A -- 70 -- S VGS = 0 V, ID = 250 ㎂ 80 -- -- V VDS = 64 V, VGS = 0 V -- -- 1 ㎂ VDS = 64 V, TJ = 125℃ -- -- 100 ㎂ VGS = ±25 V, VDS = 0 V -- -- ±100 ㎁ -- 3200 -- ㎊ -- 440 -- ㎊ -- 270 -- ㎊ -- 1.2 -- Ω -- 50 -- ㎱ -- 65 -- ㎱ -- 140 -- ㎱ -- 50 -- ㎱ -- 75 -- nC -- 20 -- nC -- 25 -- nC Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 25 V, VGS = 0 V, f = 1.0 MHz VGS = 0 V, VDS = 0 V, f = 1MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 40 V, ID = 30 A, RG = 6 Ω VDS = 64 V, ID = 30 A, VGS = 10 V Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 110 ISM Pulsed Source-Drain Diode Forward Current -- -- 385 VSD Source-Drain Diode Forward Voltage IS = 30 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time -- 45 -- ㎱ Qrr Reverse Recovery Charge IS = 30 A, VGS = 0 V diF/dt = 100 A/μs -- 65 -- nC A Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, IAS=22A, VDD=30V, RG=25Ω, Starting TJ =25°C ◎ SEMIHOW REV.A0,December 2014 HRP85N08K Electrical Characteristics TJ=25 °C HRP85N08K Typical Characteristics VGS 15 V 10 V 8V 7V 6V 5.5 V 5V Bottom : 4.5 V 102 100 ID, Drain Current [A] ID, Drain Current [A] Top : 10 175oC 25oC 1 * Notes : 1. VDS= 20V 2. 300us Pulse Test * Notes : 1. 300us Pulse Test 2. TC = 25oC 101 100 0.1 0 101 2 Figure 1. On Region Characteristics 9.5 6 8 VGS = 10V 9.0 8.5 8.0 7.5 7.0 6.5 100 10 175oC 25oC 1 * Notes : 1. VGS= 0V 2. 300us Pulse Test ∗ Note : TJ = 25oC 0.1 0.0 6.0 0 50 100 150 200 250 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 2000 Coss * Note ; 1. VGS = 0 V 2. f = 1 MHz Crss 1000 0 10-1 1.2 1.6 2.0 100 101 12 VGS, Gate-Source Voltage [V] Ciss 4000 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 3. On Resistance Variation vs Drain Current and Gate Voltage 5000 0.4 VSD, Source-Drain Voltage [V] ID, Drain Current [A] Capacitances [pF] 10 Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 4 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 10 8 6 4 2 0 VDS = 64V ID = 30V 0 20 40 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 80 ◎ SEMIHOW REV.A0,December 2014 (continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage HRP85N08K Typical Characteristics 1.1 1.0 0.9 ∗ Note : 1. VGS = 0 V 2. ID = 250µA 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 ∗ Note : 1. VGS = 10 V 2. ID = 40 A 0.0 -100 200 -50 0 50 100 150 200 TJ, Junction Temperature [oC] TJ, Junction Temperature [oC] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 120 Operation in This Area is Limited by R DS(on) 103 100 µs 90 101 ID, Drain Current [A] 1 ms 10 ms DC 0 10 * Notes : 1. TC = 25 oC 10-1 60 30 2. TJ = 175 oC 3. Single Pulse 10-2 10-1 100 101 0 25 102 50 75 100 125 150 175 TC, Case Temperature [oC] VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 100 ZθJC(t), Thermal Response ID, Drain Current [A] 102 D=0.5 * Notes : 1. ZθJC(t) = 0.75 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.2 10-1 0.1 0.05 PDM 0.02 0.01 t1 single pulse 10-2 -5 10 -4 10 -3 10 -2 10 -1 10 t2 100 101 t1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve ◎ SEMIHOW REV.A0,December 2014 HRP85N08K Fig 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% tr td(on) td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD L VDS VDD ID BVDSS IAS RG 10V ID (t) DUT VDS (t) VDD tp Time ◎ SEMIHOW REV.A0,December 2014 HRP85N08K Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop ◎ SEMIHOW REV.A0,December 2014 HRP85N08K Package Dimension TO-220 (A) 9.90±0.20 0 .2 ±0 0 .6 4.50±0.20 6.50±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 1.30±0.20 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 φ3 0.80±0.20 2.54typ 2.54typ 0.50±0.20 ◎ SEMIHOW REV.A0,December 2014 HRP85N08K Package Dimension TO-220 (B) ±0.20 84 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 . φ3 0 .2 ±0 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 ◎ SEMIHOW REV.A0,December 2014