Preliminary Datasheet HITK0302MP 30V, 2.7A, 115mmax. Silicon N Channel MOS FET Power Switching R07DS0483EJ0200 Rev.2.00 May 09, 2013 Features Low on-resistance RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D G 3 1. Source 2. Gate 3. Drain 2 1 2 S 1 Note: Marking is “GV”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS Ratings 30 Unit V VGSS ID 20 2.7 5 2.7 0.8 150 –55 to +150 V A A A W C C ID(Pulse) Note1 IDR Pch Note2 Tch Tstg Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 40 1 mm) R07DS0483EJ0200 Rev.2.00 May 09, 2013 Page 1 of 6 HITK0302MP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Drain to source leak current Gate to source cutoff voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) Min 30 20 — — 1.0 Typ — — — — — Max — — 10 1 2.0 Unit V V A A V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA Drain to source on state resistance RDS(on) — 92 115 m ID = 1.3 A, VGS = 10 VNote3 RDS(on) — 122 171 m ID = 1.3 A, VGS = 4.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg 2.1 — — — — — — — — 3.5 175 34 15 9.5 37 38 8.2 3.3 — — — — — — — — — S pF pF pF ns ns ns ns nC ID = 1.3 A, VDS = 10 VNote3 Gate to source charge Gate to drain charge Body - drain diode forward voltage Qgs Qgd VDF — — — 0.6 0.5 0.9 — — — nC nC V VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 10 , Rg = 4.7 VDD = 10 V, VGS = 10 V, ID = 2.7A IF = 1.5 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0483EJ0200 Rev.2.00 May 09, 2013 Page 2 of 6 HITK0302MP Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area 100 0.8 0.4 10 10 0 PW 1 DC = μs s 0.6 Operation in this area is limited by RDS(on) m Drain Current ID (A) 1.0 1 Channel Dissipation Pch (W) 1.2 10 m s O pe ra tio n 0.1 0.2 Tc = 25°C 0 0 25 50 75 100 125 0.01 0.01 150 Ambient Temperature Ta (°C) VDS = 10 V Pulse Test 3.6 V 3.4 V 3 3.2 V 2 3.0 V Pulse Test Tc = 25°C 1 0 2.7 V 2 4 6 8 4 3 25°C 2 Tc = 75°C 1 –25°C VGS = 0 V 0 100 5 3.8 V Drain Current ID (A) Drain Current ID (A) 4 10 Typical Transfer Characteristics (1) Typical Output Characteristics 4.0 V 4.5 V 10 V 1 Drain to Source Voltage VDS (V) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) 5 0.1 0 10 1 Drain to Source Voltage VDS (V) 1.5 2 2.5 3 3.5 4 Gate to Source Voltage VGS (V) Drain Current ID (A) 1.0 VDS = 10 V Pulse Test 0.1 Tc = 75°C 0.01 25°C –25°C 0.001 0.0001 0 0.5 1 1.5 2 2.5 Gate to Source Voltage VGS (V) R07DS0483EJ0200 Rev.2.00 May 09, 2013 3 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 2.5 2 ID = 10 mA 1 mA 1.5 0.1 mA 1 VDS = 10 V Pulse Test 0.5 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 Preliminary 0.8 Pulse Test Tc = 25°C 0.6 0.4 1.5 A 0.5 A 0.2 A 0.1 A 1.0 A 0.2 0 0 2 4 6 8 10 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test Tc = 25°C 0.3 VGS = 4.5 V 0.1 10 V 0.03 0.01 0.1 0.3 1 3 10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) 260 Pulse Test VGS = 4.5 V ID = 1.5 A 220 1A 180 0.5 A 0.2 A 140 100 –25 0 25 50 75 100 125 150 Pulse Test VGS = 10 V ID = 1.5 A 150 1A 0.5 A 0.2 A 100 50 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 10 –25°C 25°C 1 200 Case Temperature Tc (°C) Tc = 75°C Pulse Test VDS = 10 V 0.1 0.1 1 Drain Current ID (A) R07DS0483EJ0200 Rev.2.00 May 09, 2013 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) HITK0302MP 1000 Pulse Test VGS = 0 V VDS = 30 V 100 10 1 0.1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 6 HITK0302MP Preliminary Switching Characteristics 20 ID = 2.7 A Tc = 25°C 80 16 VDD =10 V 60 12 25 V VGS 40 8 VDS 4 20 0 VDD = 25 V 10 V 0 0.8 1.6 2.4 3.2 0 4.0 1000 Switching Time t (ns) 100 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 10 td(on) tr 0.1 1 10 Gate Charge Qg (nC) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 240 Ciss Ciss (pF) 100 Coss 10 VGS = 0 V f = 1 MHz 5 230 220 210 Crss 200 10 15 20 25 VDS = 0 V f = 1 MHz 190 –10 30 –5 0 5 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 5 Pulse Test Tc = 25°C 4 3 VGS = 10 V 0 V, –5V, –10V 5V 2 1 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0483EJ0200 Rev.2.00 May 09, 2013 Body-Drain Diode Forward Voltage VSDF (V) Ciss, Coss, Crss (pF) td(off) 250 1 0 Reverse Drain Current IDR (A) tf 100 1 0.01 1000 0 VDD = 10 V VGS = 10 V Rg = 4.7 Ω PW = 5 μs Tc = 25°C 1.0 VGS = 0 0.9 ID = 10 mA 0.8 0.7 0.6 0.5 1 mA 0.4 0.3 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 6 HITK0302MP Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number Quantity HITK0302MPTL-HQ 3000 pcs. 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