SHDC626112 SHDC626112P SHDC626112N SHDC626112D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4185, Rev. C HERMETIC SILICON CARBIDE RECTIFIER DESCRIPTION: A 1200-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC HERMETIC TO-257 PACKAGE (GLASS SEALS NOT AVAILABLE FOR THIS VOLTAGE) FEATURES: NO RECOVERY TIME OR REVERSE RECOVERY LOSSES NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at high frequency; use part number prefix SHDG ALL RATINGS ARE @ TC = 25 C UNLESS OTHERWISE SPECIFIED. MAXIMUM RATINGS RATING SYMBOL MAX. UNITS PIV 1200 Volts O IO 20 Amps O IO 10 Amps MAXIMUM REPETITIVE FORWARD SURGE CURRENT O (t = 8.3ms, Sine) per leg, TC = 25 C IFRM 50 Amps MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT O (t = 10s, pulse) per leg, TC = 25 C (this is not tested, but guaranteed) IFSM 250 Amps Pd 40 W MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE For Common Cathode/Anode Configurations) RJC 1.00 C/W MAXIMUM THERMAL RESISTANCE, Junction to Case (PER DUAL PACKAGE For Doubler or Single Configurations) RJC 2.00 C/W MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE* Top, Tstg -55 to +200 C PEAK INVERSE VOLTAGE MAXIMUM DC OUTPUT CURRENT (With TC = 65 C, for part numbers with P and N suffixes) MAXIMUM DC OUTPUT CURRENT (With TC = 65 C, for part number with D suffix or without suffix) O MAXIMUM POWER DISSIPATION, TC = 25 C * Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C. ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHDC626112 SHDC626112P SHDC626112N SHDC626112D SENSITRON TECHNICAL DATA DATA SHEET 4185, Rev. C ELECTRICAL CHARACTERISTICS CHARACTERISTIC TYP MAX. MAXIMUM FORWARD VOLTAGE DROP (If =10A PER LEG) Vf TJ=25 C 1.60 1.80 TJ=175 C 2.50 3.00 TJ = 25 C 0.01 0.20 TJ = 175 C 0.02 1.00 mA TOTAL CAPACITIVE CHARGE (VR=1200V, IF=10A, di/dt=500A/s and TJ=25C) QC per leg 60 N/A nC MAXIMUM JUNCTION CAPACITANCE (Vr =400V) per leg 70 MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) Ir CT ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] UNITS Volts pF SHDC626112 SHDC626112P SHDC626112N SHDC626112D SENSITRON TECHNICAL DATA DATASHEET 4185, Rev. C MECHANICAL DIMENSIONS TO-257 .150 (3.81 Dia. .140 3.56) .665 (16.89 .645 16.38) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) 1 2 .035 (0.89 .025 0.63) 3 Places .045 (1.14 .035 0.89) .430 (10.92 .410 10.41) 3 .100(2.54) BSC 2 Places .120(3.05) BSC PINOUT TABLE TYPE SINGLE RECTIFIER DUAL RECTIFIER/COMMON CATHODE (P) DUAL RECTIFIER/COMMON ANODE (N) DUAL RECTIFIER/DOUBLER (D) PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE ANODE/ CATHODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE SCHEMATIC 1 2 SINGLE 3 1 2 3 COMMON CATHODE 1 2 3 COMMON ANODE 3 2 DOUBLER 1 Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche capabilities of the device are limited. Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially damaging conditions in their applications. ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHDC626112 SHDC626112P SHDC626112N SHDC626112D SENSITRON TECHNICAL DATA DATASHEET 4185, Rev. C DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]