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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4062 J-FET INPUT LOW-POWER DUAL OPERATIONAL AMPLIFIER DESCRIPTION The µPC4062 is a J-FET input low-power operational amplifier featuring low supply voltage operation from ±2 V. Supply current is ten times smaller than that of µPC4082 type op-amp. With very low input bias current characteristics, the µPC4062 is an excellent choice for hand-held measurement equipment and other low-power application circuits. FEATURES • Low supply current: 400 µA (TYP.) • Very low input bias and offset currents • High input impedance...J-FET Input Stage • Low supply voltage operation • Output short circuit protection • Internal frequency compensation ORDERING INFORMATION Part Number Package µPC4062C 8-pin plastic DIP (7.62 mm (300)) µPC4062G2 8-pin plastic SOP (5.72 mm (225)) PIN CONFIGURATION (Top View) EQUIVALENT CIRCUIT (1/2 Circuit) V R1 R4 µ PC4062C, 4062G2 R9 Q9 Q5 + Q14 OUT1 1 II Q12 Q10 Q1 Q 2 IN C1 Q17 Q7 OUT Q6 7 OUT2 IN1 3 6 II2 – 4 5 IN2 Q18 R10 Q4 2 2 + – R5 Q13 Q3 II1 Q16 R8 R7 + 1 – + Q15 Q11 Q8 8 V V Q20 Q19 R2 R3 R6 V – The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15108EJ4V0DS (4th edition) Date Published March 2004 N CP(K) Printed in Japan The mark shows major revised points. 1987 µPC4062 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter + Voltage between V and V – Note 1 – –0.3 to +36 V ±30 V VID – + V – + VI V –0.3 to V +0.3 VO V –0.3 to V +0.3 V PT 350 mW G2 Package 440 mW Note 6 Indefinite sec Note 3 C Power Dissipation Unit + Note 2 Output Voltage Ratings V –V Differential Input Voltage Input Voltage Symbol Note 4 Package Note 5 Output Short Circuit Duration Operating Ambient Temperature TA –20 to +80 °C Storage Temperature Tstg –55 to +125 °C Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mV/°C when operating ambient temperature is higher than 55°C. 5. Thermal derating factor is –4.4 mV/°C when operating ambient temperature is higher than 25°C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5. RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Output Source Current Output Sink Current Capacitive Load (AV = +1, Rf = 0 Ω) 2 Symbol MIN. V± ±2 MAX. Unit ±16 V IO SOURCE 5 mA IO SINK 3.5 mA CL 100 pF Data Sheet G15108EJ4V0DS TYP. µPC4062 ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±15 V) Parameter Input Offset Voltage Input Offset Current Input Bias Current TYP. MAX. Unit Note 7 Note 8 Conditions MIN. ±2 ±10 mV IIO ±5 ±50 pA IB 10 100 pA 500 µA RS ≤ 50 Ω VIO Note 7 Large Signal Voltage Gain Supply Current Symbol AV RL ≥ 10 kΩ , VO = ±10 V ICC IO = 0 A 3000 9000 400 Common Mode Rejection Ratio CMR 70 90 dB Supply Voltage Rejection Ratio SVR 70 90 dB Output Voltage Swing Vom ±12 +14.0 V RL ≥ 10 kΩ –13.6 Common Model Input Voltage Range ±12 VICM +15 V –13 Slew Rate SR Unity Gain Frequency funity Input Equivalent Noise Voltage Density en AV = 1 RS = 100 Ω, f = 1 kHz Channel Separation Input Offset Voltage Average VIO Temperature Drift Input Offset Current Input Bias Current Note 7 Note 7 3 V/µs 1 MHz 30 nV/√Hz 120 dB VIO RS ≤ 50 Ω, TA = –20 to +70°C ±15 ∆VIO/∆T TA = –20 to +70°C IIO TA = –20 to +70°C ±2 nA IB TA = –20 to +70°C 3.5 nA mV µV/°C ±10 Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the junction temperature close to the operating ambient temperature. 8. This current flows irrespective of the existence of use. Data Sheet G15108EJ3V0DS 3 µPC4062 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.) POWER DISSIPATION OPEN LOOP FREQUENCY RESPONSE 120 500 400 AV - Open Loop Voltage Gain - dB PT - Total Power Dissipation - mW 600 µ PC4062G2 µ PC4062C 200°C/W 300 200 227°C/W 100 20 0 40 60 80 V± = ±15 V RL = 10 kΩ 100 80 60 40 20 0 100 1 TA - Operating Ambient Temperature - °C 10 100 INPUT OFFSET VOLTAGE 5 10 M INPUT BIAS CURRENT each 5 samples data IB - Input Bias Current - nA VIO - Input Offset Voltage - mV 10 k 100 k 1 M 100 V± = ±15 V 4 1k f - Frequency - Hz 3 2 1 0 −1 −2 V± = ±15 V 10 1.0 0.1 −3 −4 −5 −40 0.01 −20 −20 0 20 40 60 0 20 40 60 80 TA - Operating Ambient Temperature - °C 80 TA - Operating Ambient Temperature - °C LARGE SIGNAL FREQUENCY RESPONSE OUTPUT VOLTAGE SWING 40 20 V± = ±10 V 10 V± = ±5 V 0 100 4 RL = 10 kΩ RL = 10 kΩ V± = ±15 V Vom - Output Voltage Swing - Vp-p Vom - Output Voltage Swing - Vp-p 30 1k 10 k 100 k f - Frequency - Hz 1M 10 M 30 20 10 0 Data Sheet G15108EJ4V0DS ±10 V± - Supply Voltage - V ±20 µPC4062 OUTPUT SOURCE CURRENT LIMIT OUTPUT SINK CURRENT LIMIT +15 −15 V± = ±15 V VO− - Negative Output Voltage - V VO+ - Positive Output Voltage - V V± = ±15 V +10 −20°C +5 TA = 70°C 0 5 25°C 10 −10 25°C −5 SUPPLY CURRENT en - Input Equivalent Noise Voltage Density - nV/ Hz ICC - Supply Current - µ A 400 300 200 100 ±10 5 10 15 IO SINK - Output Sink Current - mA 500 ±5 −20°C 0 15 IO SOURCE - Output Source Current - mA 0 TA = 70°C ±15 ±20 INPUT EQUIVALENT NOISE VOLTAGE DENSITY 50 V± = ±15 V RS = 100 Ω 40 30 20 10 0 10 V± - Supply Voltage - V 100 1k 10 k 100 k f - Frequency - Hz VI - Input Voltage - V / VO - Output Voltage - V VOLTAGE FOLLOWER PULSE RESPONSE AV = +1 RL = 10 kΩ CL = 100 pF V± = ±15 V 5 0 −5 5 0 −5 0 5 10 15 20 t - Time - µ s Data Sheet G15108EJ3V0DS 5 µPC4062 PACKAGE DRAWINGS (Unit : mm) 8-PIN PLASTIC DIP (7.62mm(300)) 8 5 1 4 A K J L P I C H G B M R F D N M NOTES 1. Each lead centerline is located within 0.25 mm of its true position (T.P.) at maximum material condition. 2. ltem "K" to center of leads when formed parallel. ITEM MILLIMETERS A B 10.16 MAX. 1.27 MAX. C 2.54 (T.P.) D 0.50±0.10 F 1.4 MIN. G H 3.2±0.3 0.51 MIN. I J 4.31 MAX. 5.08 MAX. K 7.62 (T.P.) L 6.4 M 0.25 +0.10 −0.05 N 0.25 P 0.9 MIN. R 0∼15° P8C-100-300B,C-2 6 Data Sheet G15108EJ4V0DS µPC4062 8-PIN PLASTIC SOP (5.72 mm (225)) 8 5 detail of lead end P 4 1 A H F I G J S B C D M L N K S M E NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS A 5.2 +0.17 −0.20 B 0.78 MAX. C 1.27 (T.P.) D 0.42 +0.08 −0.07 E 0.1±0.1 F 1.59±0.21 G 1.49 H 6.5±0.3 I 4.4±0.15 J 1.1±0.2 K 0.17 +0.08 −0.07 L 0.6±0.2 M 0.12 N 0.10 P 3° +7° −3° S8GM-50-225B-6 Data Sheet G15108EJ3V0DS 7 µPC4062 RECOMMENDED SOLDERING CONDITIONS The µPC4062 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Type of Surface Mount Device µPC4062G2: 8-pin plastic SOP (5.72 mm (225)) Process Infrared Ray Reflow Conditions Symbol Peak temperature: 230°C or below (Package surface temperature), IR30-00-1 Reflow time: 30 seconds or less (at 210°C or higher), Maximum number of reflow processes: 1 time. Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature), VP15-00-1 Reflow time: 40 seconds or less (at 200°C or higher), Maximum number of reflow processes: 1 time. Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, WS60-00-1 Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). Partial Heating Method Pin temperature: 300°C or below, – Heat time: 3 seconds or less (Per each side of the device). Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the device will be damaged by heat stress. Type of Through-hole Device µPC4062C: 8-pin plastic DIP (7.62 mm (300)) Process Conditions Wave Soldering Solder temperature: 260°C or below, (only to leads) Flow time: 10 seconds or less. Partial Heating Method Pin temperature: 300°C or below, Heat time: 3 seconds or less (per each lead). Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered. 8 Data Sheet G15108EJ4V0DS µPC4062 • The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1