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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION PART NUMBER The 2SK3115B is N-Channel MOS FET device that features a 2SK3115B-S17-AY low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power PACKAGE Note Isolated TO-220 Note Pb-free (This product does not contain Pb in supply, AC adapter. External electrode.) FEATURES • Low gate charge QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating : ±30 V • Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Avalanche capability ratings (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A ID(pulse) ±24 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 35 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C IAS 6.0 A EAS 24 mJ Drain Current (pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18065EJ2V0DS00 (2nd edition) Date Published August 2006 NS CP (K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 2SK3115B ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 μA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V | yfs | VDS = 10 V, ID = 3.0 A 2.0 RDS(on) VGS = 10 V, ID = 3.0 A Gate Cut-off Voltage Note Forward Transfer Admittance Drain to Source On-state Resistance Note 2.7 S 0.9 Ω 1.2 Input Capacitance Ciss VDS = 10 V 1090 pF Output Capacitance Coss VGS = 0 V 380 pF Reverse Transfer Capacitance Crss f = 1 MHz 53 pF Turn-on Delay Time td(on) VDD = 150 V, ID = 3.0 A 16 ns tr VGS = 10 V 11 ns td(off) RG = 10 Ω 29 ns tf RL = 50 Ω 8 ns Rise Time Turn-off Delay Time Fall Time Total Gate Charge QG VDD = 450 V 21 nC Gate to Source Charge QGS VGS = 10 V 8 nC QGD ID = 6.0 A 8 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 6.0 A, VGS = 0 V 0.9 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 360 ns Reverse Recovery Charge Qrr di/dt = 50 A/μs 1730 nC Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D18065EJ2V0DS td(on) tr ton td(off) tf toff 2SK3115B TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 20 60 40 20 0 40 60 80 100 120 140 160 Tch - Channel Temperature - °C 20 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 PW = 10 μs 100 μs ID(DC) 10 10 ms 1 ms 1 RDS(on) Limited (at VGS = 10 V) 0.1 Power Dissipation Tc = 25℃, Single pulse 0.01 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(pulse) Rth(ch-A) = 62.5°C/W 100 10 Rth(ch-C) = 3.57°C/W 1 0.1 Single pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width – s Data Sheet D18065EJ2V0DS 3 2SK3115B DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 12 100 10 ID - Drain Current - A ID - Drain Current - A Pulsed VGS = 10 V 8 8V 6 4 VDS = 10 V Pulsed 10 1 Tch = 125°C 75°C 25°C −25°C 0.1 2 0.01 0 0 5 10 15 5 15 25 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE V DS = 10 V ID = 1 mA 4 3 2 0 50 100 10 Tch = −25°C 25°C 1 75°C 125°C 0.1 VDS = 10 V Pulsed 0.01 0.01 150 Tch - Channel Temperature - °C 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.5 Pulsed 3 2 ID = 6.0 A 1 3.0 A 0 0 5 10 15 20 25 RDS(on) - Drain to Source On-state Resistance - Ω 4 Pulsed 1.4 1.3 1.2 1.1 V GS = 10 V 1.0 20 V 0.9 0.8 0.01 0.1 1 VGS – Gate to Source Voltage - V ID - Drain Current - A 4 20 VGS - Gate to Source Voltage - V 1 -50 RDS(on) - Drain to Source On-state Resistance - Ω 10 VDS - Drain to Source Voltage - V 5 VGS(off) - Gate Cut-off Voltage - V 0 20 Data Sheet D18065EJ2V0DS 10 100 2SK3115B DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 3 100 IF – Diode Forward Current - A ID = 6.0 A 2 3.0 A 1 VGS = 10 V Pulsed 0 10 VGS = 10 V 1 0V 0.1 Pulsed 0.01 -50 0 50 100 150 0 0.5 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 C iss 1000 C oss 100 C rss 10 VGS = 0 V f = 1 MHz 1 0.01 0.1 1 1.5 VF(S-D) – Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 VDD = 150 V VGS = 10 V RG = 10 Ω tf 100 td(off) td(on) 10 tr 1 0.1 100 VDS - Drain to Source Voltage – V 1 10 ID - Drain Current - A REVWESE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 700 1000 di/dt = 50 A/μs VGS = 0 V VDS – Drain to Source Voltage - V trr – Reverse Recovery Time - ns 1 100 10 1 VDD = 450 V 300 V 150 V 600 9 VGS 8 500 7 400 6 5 300 4 3 200 VDS 2 100 1 ID = 6.0 A 0 0.1 1 10 ID - Drain Current - A VGS – Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω <R> 0 0 5 10 15 20 25 QG – Gate Chage - nC Data Sheet D18065EJ2V0DS 5 2SK3115B SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 10 Energy Derating Factor - % IAS - Single Avalanche Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS = 6.0 A EAS = 24 mJ 1.0 RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C 0.1 10 μ VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 6.0 A 100 80 60 40 20 100 μ 1m 10 m L - Inductive Load - H 0 75 125 150 25 50 100 Starting Tch - Starting Channel Temperature - °C EQUIVALENT CIRCUIT PACKAGE DRAWING (Unit: mm) Drain (D) Isolated TO-220 (MP-45F) 4.7±0.2 10.0±0.3 3.2±0.2 2.54±0.2 Body Diode 1.47 MAX Source (S) 13.5 MAX. 3.0 TYP. 3.30±0.20 15.87±0.3 Gate (G) 2.76±0.2 0.8±0.2 2.54 TYP. 2.54 TYP. 0.50±0.1 1. Gate 2. Drain 3. Source 1 2 3 Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18065EJ2V0DS 2SK3115B • The information in this document is current as of August, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1