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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2941 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is n-Chanel MOS Field Effect Transistor designed high inmillimeters current switching application. RDS(on)1 = 14 mΩ Typ. (VGS = 10 V, ID =18 A) 3.6±0.2 4 Ciss = 1250 pF Typ. 1 2 3 6.0 MAX. • Built-in G-S Protection Diode 1.3±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) 1.3±0.2 10.0 RDS(on)2 = 22 mΩ Typ. (VGS = 4 V, ID = 18 A) • Low Ciss 4.8 MAX. 10.6 MAX. 5.9 MIN. • Low On-Resistance 12.7 MIN. 15.5 MAX. 3.0±0.3 FEATURE 0.5±0.2 0.75±0.1 Maximum Voltages and Currents 2.8±0.2 2.54 Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±35 A Drain Current (Pulse)* ID(Pulse) ±140 A 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) Maximum Power Dissipation Total Power Dissipation (TA = 25 ˚C) PT 1.5 W Total Power Dissipation (TC = 25 ˚C) PT 60 W Maximum Temperature Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to + 125 ˚C * PW ≤ 10 µs, Duty Cycle ≤ 1% Drain Dody Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. D11007EJ1V0DS00 (1st edition) Date Published May 1997 N © 1997 2SK2941 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source On-State Resistance SYMBLO MIN. TYP. MAX. UNIT RDS(on)1 14 20 mΩ VGS = 10 V, ID = 18 A RDS(on)2 22 33 mΩ VGS = 4 V, ID = 18 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 18 A Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 Forward Transfer Admittance I yfs I 8.0 25 TEST CONDITION Drain Leakage Current IDDS 10 µA VDS = 30 V, VGS = 0 Gate to Source Leakage Current IGSS ±10 µA VGS = ±20 V, VDS = 0 Input Capacitance Ciss 1250 pF VDS = 10 V, VGS = 0, f =1 MHz Output Capacitance Coss 900 pF Reverse Transfer Capacitance Crss 460 pF Turn-on Delay Time td(on) 40 ns ID = 18 A, VGS(on) = 10 V tr 430 ns VDD = 15 V, RG = 10 Ω td(off) 160 ns tr 220 ns Total Gate Charge QG 50 nC Gate to Source Charge QGS 4.5 nC Gate to Drain Charge QGD 21 nC VF(S-D) 1.0 V trr 65 ns IF = 35 A, VGS = 0, nC di/dt = 100 A/µs Rise Time Turn-off Delay Time Fall Time Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Qrr 90 Test Circuit 1 Switching Time ID = 35 A, VDD = 24 V, VGS = 10 V IF = 35 A, VGS = 0 Test Circuit 2 Gate Charge D.U.T. IG = 2 mA D.U.T. RL VGS VGS PG RG RG = 10 Ω Wave Form 0 VGS(on) 10 % 90 % PG VDD ID 90 % VGS ID 0 Wave Form t t = 1 µs Duty Cycle ≤ 1 % 2 0 90 % ID 10 % td(on) 10 % tr td(off) ton tf toff 50 Ω RL VDD 2SK2941 ELECTRICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Percentage of Rated Power - % PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 80 60 40 20 0 20 100 80 60 40 20 0 40 60 80 100 120 140 160 TC - Case Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 20 40 60 80 100 120 140 160 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 Pulsed Tc = 25 °C Single Pulse VGS = 10 V 120 80 VGS = 4 V 40 ID - Drain Current - A ID - Drain Current - A 160 ID(Pulse) 100 PW ID(DC) 10 10 0 DC 10 = 1m s m s m s 20 0 m s 1 0.5 1.0 1.5 VDS - Drain to Source Voltage - V 0.1 1 10 VDS - Drain to Source Voltage - V 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - °C/W 0 Rth(ch-a) = 83.3 (°C/W) 100 10 Rth(ch-c) = 2.08 (°C/W) 1 Single Pulse Tc = 25 °C 0.1 1m 10m 100m 1 10 100 1 000 10 000 PW - Pulse Width - s 3 2SK2941 RDS(on) - Drain to Source On - State resistance - mΩ GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V 2.0 VDS = 10 V ID = 1 mA 1.5 1.0 0.5 –50 0 50 100 T ch - Channel Temperature - °C 150 RDS(on) - Drain to Source On - State Resistance - mΩ 0 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S 100 V DS= 10 V Pulsed TA = –25 °C 25 °C 75 °C 125 °C 10 1 10 100 1000 DRAIN TO SOURCE ON - STATE RESISTANCE vs. DRAIN CURRENT 30 VGS = 4 V 20 VGS = 10 V 10 0 Pulsed 100 ID = 7 A 18 A 35 A 50 0 100 10 0 4 5 VGS - Gate to Source Voltage - V 10 10 000 Ciss, Coss, Crss - Capacitance - pF ID - Drain Current - A TA = –25 °C 25 °C 75 °C 125 °C 5 10 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS VDS = 10 V Pulsed 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ID - Drain Current - A 1000 1 1000 VGS = 0 f =1 MHz Ciss Coss Crss 100 10 0.1 1 10 VDS - Drain to Source Voltage - V 2SK2941 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 1000 tr tf 10 VDD = 15 V VGS =10 V Rin =10 Ω 0.1 1 10 I D - Drain Current - A DRAIN TO SOURCE ON-RESISTANCE vs. CHANNEL TEMPERATURE 100 80 60 VGS = 4 V 40 VGS = 10 V 20 0 –50 0 50 100 150 T ch - Channel Temperature - °C VGS = 4V VGS = 0V 10 1.0 0.1 0 100 ID = 18 A Pulsed 100 0.8 1.2 1.6 2.0 0.4 VSD - Source to Drain Voltage - V 2.4 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 35 A 16 14 VGS 30 20 VDD = 24 V 15 V 6V 12 10 8 6 4 10 2 VDS 0 20 40 60 Q g - Gate Charge - nC 80 0 REVERSE RECOVERY TIME vs. DRAIN CURRENT trr - Reverse Recovery Diode - ns 1000 di/dt = 100 A/µs VGS = 0 100 10 1 0.1 1 10 100 I D - Drain Current - A 5 VGS - Gate to Source Voltage - V t d(on) ISD - Diode Dorward Current - A t d(off) 100 1 RDS(on) - Drain to Source On - State Resistance - mΩ Pulsed VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 2SK2941 ELECTRICAL REFERENCE (TA = 25 °C) Ducument Name 6 Ducument No. NEC semiconductor device reliability/quality control system C11745E Quality grade on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E Semiconductor device package manual C10943X Guide to quality assurance for semiconductor devices MEI-1202 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037 2SK2941 [MEMO] 7 2SK2941 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 2