To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR µPA1700 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is N-Channel MOS Field Effect Tran- (in millimeter) sistor designed for DC/DC converter and power management applications of note book computers. 8 5 1,2,3 ; Source 4 ; Gate 5,6,7,8 ; Drain FEATURES • Low On-Resistance RDS(on)1 = 27 mΩ Typ. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Typ. (VGS = 4 V, ID = 3.5 A) • Small and Surface Mount Package 0.05 Min (Power SOP8) ORDERING INFORMATION PART NUMBER PACKAGE µPA1700G Power SOP8 6.0±0.3 4 4.4 5.37 Max 0.8 0.15 +0.10 –0.05 • Built-in G-S Protection Diode 1.44 1 Ciss = 850 pF Typ. 1.8 Max • Low Ciss 0.5±0.2 1.27 0.78 Max 0.40 +0.10 –0.05 0.10 0.12 M EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGDS ±20 V Drain Current (DC) ID(DC) ±7.0 A Drain Current (pulse)* ID(pulse) ±28 A Total Power Dissipation PT 2.0 W (TA = 25 °C)** Channel Temperature TCH 150 °C Storage Temperature Tstg –55 to +150 °C Body Diode Gate Gate Protection Diode Source To keep good radiate condition, It is recommended that all pins are soldering to print board. * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Mounted on ceramic substate of 1200 mm2 × 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. G10479EJ2V0DS00 (2nd edition) Date Published September 1995 P Printed in Japan © 1995 µPA1700 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TYP. MAX. UNIT VGS = 10 V, ID = 3.5 A 20 27 mΩ RDS(on)2 VGS = 4 V, ID = 3.5 A 33 50 mΩ Gate to Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 5.0 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance Ciss VDS = 10 V 850 pF Output Capacitance Coss VGS = 0 550 pF Reverse Transfer Capacitance Crss f = 1 MHz 270 pF Turn-On Delay Time td(on) ID = 3.5 A 20 ns Rise Time tr VGS(on) = 10 V 105 ns Turn-Off Delay Time td(off) VDD = 15 V 90 ns Fall Time tf RG = 10 Ω 60 ns Total Gate Charge QG ID = 7.0 A 33 nC Gate to Source Charge QGS VDD = 24 V 2.4 nC Gate to Drain Charge QGD VGS = 10 V 13 nC Body Diode Forward Voltage VF(S-D) IF = 7.0 A, VGS = 0 0.84 V Reverse Recovery Time trr IF = 7.0 A, VGS = 0 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 90 nC Drain to Source On-state Resistance RDS(on)1 TEST CONDITIONS Test Circuit 1 Switching Time MIN. Test Circuit 2 Gate Charge D.U.T. VGS RL VGS PG. RG RG = 10 Ω Wave Form 0 VGS (on) 10 % PG. 90 % 90 % ID I D Wave Form t t = 1 µs Duty Cycle < =1 % 2 D.U.T. IG = 2 mA 90 % VDD ID VGS 0 S 0 10 % 10 % tr td (on) ton td (off) tf toff 50 Ω RL VDD µPA1700 TYPICAL CHARACTERISTICS (TA = 25 °C) PT – Total Power Dissipation – W 2.8 100 80 60 40 20 0 20 40 60 80 2.4 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 1200 mm 2 × 0.7 mm 20 40 60 80 100 120 140 160 TA – Ambient Temperature – °C TA – Ambient Temperature – °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 ID – Drain Current – A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE d ite V) Lim 10 ) on = S S( RD t VG a ( Mounted on ceramic substrate of 1200 mm 2 × 0.7 mm ID(pulse) 1 ID(DC) 10 10 0 we rD ipa tio n m s Lim VGS = 20 V VGS = 10 V 16 VGS = 4 V 12 8 4 ite TA = 25 °C Single Pulse 0.1 0.1 s m DC iss 1 m s 10 Po Pulsed 20 ID – Drain Current – A dT – Percentage of Rated Power – % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA d 1 10 100 0 0.5 1.0 VDS – Drain to Source Voltage – V VDS – Drain to Source Voltage – V FORWARD TRANSFER CHARACTERISTICS ID – Drain Current – A 100 Pulsed 10 1 TA = –25 °C 25 °C 125 °C 0.1 0 VDS = 10 V 2.0 4.0 6.0 8.0 VGS – Gate to Source Voltage – V 3 µPA1700 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) – Transient Thermal Resistance – °C/W 1 000 Rth(ch-a) = 62.5 °C/W 100 10 1 0.1 0.01 0.001 10 µ Mounted on ceramic substrate of 1200 mm 2 × 0.7 mm Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1 000 100 10 VDS = 10 V Pulsed TA = –25 °C 25 °C 75 °C 125 °C 1 0.1 0.1 1 10 100 RDS(on) – Drain to Source On-State Resistance – mΩ ID – Drain Current – A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 40 20 ID = 3.5 A 0 150 Pulsed 100 50 VGS = 4 V VGS = 10 V 0 1 10 ID – Drain Current – A 100 10 5 15 VGS – Gate to Source Voltage – V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) – Gate to Source Cutoff Voltage – V |yfs| – Forward Transfer Admittance – S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) – Drain to Source On-State Resistance – mΩ PW – Pulse Width – s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 –50 0 50 100 150 Tch – Channel Temperature – °C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 80 VGS = 4 V 40 VGS = 10 V 20 ID = 3.5 A 0 –50 0 50 100 100 10 10 V 1 VGS = 0 0.1 0 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz 1 000 Ciss Coss Crss 100 10 0.1 1 10 100 tf td(off) 100 tr VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 100 10 1 10 100 VDS – Drain to Source Voltage – V trr – Reverse Recovery Time – ns di/dt = 100 A/ µs VGS = 0 ID – Drain Current – A 10 100 ID – Drain Current – A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 td(on) 10 VDS – Drain to Source Voltage – V 1 000 1.5 1.0 1 000 td(on), tr, td(off), tf – Switching Time – ns Ciss, Coss, Crss – Capacitance – pF 10 000 0.5 VSD – Source to Drain Voltage – V Tch – Channel Temperature – °C DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 40 ID = 7.0 A 14 VDD = 24 V 15 V 6V 30 VDS VGS – Gate to Source Voltage – V 60 ISD – Diode Forward Current – A RDS(on) – Drain to Source On-State Resistance – mΩ µPA1700 12 10 8 20 VGS 6 10 4 2 0 10 20 30 40 Qg – Gate Charge – nC 5 µPA1700 REFERENCE Document Name 6 Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual IEI-1207 Semiconductor device package manual IEI-1213 Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide MF-1134 Power MOS FET features and application switching power supply TEA-1034 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037 µPA1700 [MEMO] 7 µPA1700 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2