uPA1700 DS

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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTOR
µPA1700
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
This product is N-Channel MOS Field Effect Tran-
(in millimeter)
sistor designed for DC/DC converter and power management applications of note book computers.
8
5
1,2,3 ; Source
4
; Gate
5,6,7,8 ; Drain
FEATURES
• Low On-Resistance
RDS(on)1 = 27 mΩ Typ. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 50 mΩ Typ. (VGS = 4 V, ID = 3.5 A)
• Small and Surface Mount Package
0.05 Min
(Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1700G
Power SOP8
6.0±0.3
4
4.4
5.37 Max
0.8
0.15 +0.10
–0.05
• Built-in G-S Protection Diode
1.44
1
Ciss = 850 pF Typ.
1.8 Max
• Low Ciss
0.5±0.2
1.27
0.78 Max
0.40 +0.10
–0.05
0.10
0.12 M
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGDS
±20
V
Drain Current (DC)
ID(DC)
±7.0
A
Drain Current (pulse)*
ID(pulse)
±28
A
Total Power Dissipation
PT
2.0
W
(TA = 25 °C)**
Channel Temperature
TCH
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Body
Diode
Gate
Gate Protection
Diode
Source
To keep good radiate condition,
It is recommended that all pins
are soldering to print board.
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Mounted on ceramic substate of 1200 mm2 × 0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. G10479EJ2V0DS00 (2nd edition)
Date Published September 1995 P
Printed in Japan
©
1995
µPA1700
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TYP.
MAX.
UNIT
VGS = 10 V, ID = 3.5 A
20
27
mΩ
RDS(on)2
VGS = 4 V, ID = 3.5 A
33
50
mΩ
Gate to Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 3.5 A
5.0
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0
10
µA
Gate to Source Leakage
Current
IGSS
VGS = ±20 V, VDS = 0
±10
µA
Input Capacitance
Ciss
VDS = 10 V
850
pF
Output Capacitance
Coss
VGS = 0
550
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
270
pF
Turn-On Delay Time
td(on)
ID = 3.5 A
20
ns
Rise Time
tr
VGS(on) = 10 V
105
ns
Turn-Off Delay Time
td(off)
VDD = 15 V
90
ns
Fall Time
tf
RG = 10 Ω
60
ns
Total Gate Charge
QG
ID = 7.0 A
33
nC
Gate to Source Charge
QGS
VDD = 24 V
2.4
nC
Gate to Drain Charge
QGD
VGS = 10 V
13
nC
Body Diode Forward Voltage
VF(S-D)
IF = 7.0 A, VGS = 0
0.84
V
Reverse Recovery Time
trr
IF = 7.0 A, VGS = 0
60
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
90
nC
Drain to Source On-state
Resistance
RDS(on)1
TEST CONDITIONS
Test Circuit 1 Switching Time
MIN.
Test Circuit 2 Gate Charge
D.U.T.
VGS
RL
VGS
PG.
RG
RG = 10 Ω
Wave Form
0
VGS (on)
10 %
PG.
90 %
90 %
ID
I
D
Wave Form
t
t = 1 µs
Duty Cycle <
=1 %
2
D.U.T.
IG = 2 mA
90 %
VDD
ID
VGS
0
S
0
10 %
10 %
tr
td (on)
ton
td (off)
tf
toff
50 Ω
RL
VDD
µPA1700
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT – Total Power Dissipation – W
2.8
100
80
60
40
20
0
20
40
60
80
2.4
2.0
1.6
1.2
0.8
0.4
0
100 120 140 160
Mounted on ceramic
substrate of
1200 mm 2 × 0.7 mm
20
40
60
80
100 120 140 160
TA – Ambient Temperature – °C
TA – Ambient Temperature – °C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
ID – Drain Current – A
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
ite V)
Lim 10
)
on =
S
S(
RD t VG
a
(
Mounted on ceramic
substrate of
1200 mm 2 × 0.7 mm
ID(pulse)
1
ID(DC)
10
10
0
we
rD
ipa
tio
n
m
s
Lim
VGS = 20 V
VGS = 10 V
16
VGS = 4 V
12
8
4
ite
TA = 25 °C
Single Pulse
0.1
0.1
s
m
DC
iss
1
m
s
10
Po
Pulsed
20
ID – Drain Current – A
dT – Percentage of Rated Power – %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
1
10
100
0
0.5
1.0
VDS – Drain to Source Voltage – V
VDS – Drain to Source Voltage – V
FORWARD TRANSFER CHARACTERISTICS
ID – Drain Current – A
100
Pulsed
10
1
TA = –25 °C
25 °C
125 °C
0.1
0
VDS = 10 V
2.0
4.0
6.0
8.0
VGS – Gate to Source Voltage – V
3
µPA1700
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) – Transient Thermal Resistance – °C/W
1 000
Rth(ch-a) = 62.5 °C/W
100
10
1
0.1
0.01
0.001
10 µ
Mounted on ceramic
substrate of
1200 mm 2 × 0.7 mm
Single Pulse
100 µ
1m
10 m
100 m
1
10
100
1 000
100
10
VDS = 10 V
Pulsed
TA = –25 °C
25 °C
75 °C
125 °C
1
0.1
0.1
1
10
100
RDS(on) – Drain to Source On-State Resistance – mΩ
ID – Drain Current – A
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
60
40
20
ID = 3.5 A
0
150
Pulsed
100
50
VGS = 4 V
VGS = 10 V
0
1
10
ID – Drain Current – A
100
10
5
15
VGS – Gate to Source Voltage – V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS(off) – Gate to Source Cutoff Voltage – V
|yfs| – Forward Transfer Admittance – S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) – Drain to Source On-State Resistance – mΩ
PW – Pulse Width – s
VDS = 10 V
ID = 1 mA
2.0
1.5
1.0
0.5
0
–50
0
50
100
150
Tch – Channel Temperature – °C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
80
VGS = 4 V
40
VGS = 10 V
20
ID = 3.5 A
0
–50
0
50
100
100
10
10 V
1
VGS = 0
0.1
0
150
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
VGS = 0
f = 1 MHz
1 000
Ciss
Coss
Crss
100
10
0.1
1
10
100
tf
td(off)
100
tr
VDD = 15 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
100
10
1
10
100
VDS – Drain to Source Voltage – V
trr – Reverse Recovery Time – ns
di/dt = 100 A/ µs
VGS = 0
ID – Drain Current – A
10
100
ID – Drain Current – A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1
0.1
td(on)
10
VDS – Drain to Source Voltage – V
1 000
1.5
1.0
1 000
td(on), tr, td(off), tf – Switching Time – ns
Ciss, Coss, Crss – Capacitance – pF
10 000
0.5
VSD – Source to Drain Voltage – V
Tch – Channel Temperature – °C
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
40
ID = 7.0 A
14
VDD = 24 V
15 V
6V
30
VDS
VGS – Gate to Source Voltage – V
60
ISD – Diode Forward Current – A
RDS(on) – Drain to Source On-State Resistance – mΩ
µPA1700
12
10
8
20
VGS
6
10
4
2
0
10
20
30
40
Qg – Gate Charge – nC
5
µPA1700
REFERENCE
Document Name
6
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
IEI-1207
Semiconductor device package manual
IEI-1213
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
MF-1134
Power MOS FET features and application switching power supply
TEA-1034
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
µPA1700
[MEMO]
7
µPA1700
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2