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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2499, 2SK2499-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2499 is N-Channel MOS Field Effect Transistor de- (in millimeters) • Low On-Resistance 3.6 ± 0.2 4 6.0 MAX. 1 2 3 1.3 ± 0.2 0.75 ± 0.1 2.54 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±50 A Drain Current (pulse)* ID(pulse) ±200 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W (10.0) Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W 4 Channel Temperature Tch 150 ˚C Storage Temperature Tstg Single Avalanche Current** IAS 50 A Single Avalanche Energy** EAS 250 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % 4.8 MAX. 1.5 MAX. 8.5 ± 0.2 1.3 ± 0.2 1.4 ± 0.2 1.0 ± 0.3 (2.54) (2.54) 1 2 3 2.8 ± 0.2 ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) 1.0 ± 0.5 –55 to +150 ˚C 0.5 ± 0.2 2.8 ± 0.2 2.54 1.1 ± 0.4 3.0 ± 0.5 • Low Ciss Ciss = 3 400 pF TYP. • High Avalanche Capability. • Built-in G-S Protection Diode 1.3 ± 0.2 10.0 RDS(on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mΩ (VGS = 4 V, ID = 25 A) 4.8 MAX. 10.6 MAX. 5.9 MIN. FEATURES 12.7 MIN. 15.5 MAX. 3.0 ± 0.3 signed for high current switching applications. R) ) .5 R (0 0.8 ( 1. 2. 3. 4. 0.5 ± 0.2 Gate Drain Source Fin (Drain) MP-25Z (SURFACE MOUNT TYPE) Drain Body Diode Gate Gate Protection Diode Source Document No. D10045EJ1V0DS00 (1st edition) Date Published May 1995 P Printed in Japan © 1995 2SK2499, 2SK2499-Z ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) TYP. MAX. UNIT RDS(on)1 7.3 9.0 mΩ VGS = 10 V, ID = 25 A RDS(on)2 11 14 mΩ VGS = 4 V, ID = 25 A 2.0 V VDS = 10 V, ID = 1 mA S VDS = 10 V, ID = 25 A CHARACTERISTIC SYMBOL Drain to Source On-State Resistance MIN. TEST CONDITIONS Gate to Source Cutoff Voltage VGS(off) 1.0 1.5 Forward Transfer Admittance | yfs | 20 58 Drain Leakage Current IDSS 10 µA VDS = 60 V, VGS = 0 Gate to Source Leakage Current IGSS ±10 µA VGS = ±20 V, VDS = 0 Input Capacitance Ciss 3 400 pF VDS = 10 V Output Capacitance Coss 1 600 pF VGS = 0 Reverse Transfer Capacitance Crss 770 pF f = 1 MHz Turn-On Delay Time td(on) 55 ns ID = 25 A Rise Time tr 360 ns VGS(on) = 10 V 480 ns VDD = 30 V 360 ns RG = 10 Ω 152 nC ID = 50 A 11 nC VDD = 48 V 60 nC VGS = 10 V 0.92 V IF = 50 A, VGS = 0 105 ns IF = 50 A, VGS = 0 265 nC di/dt = 100 A/µs Turn-Off Delay Time td(off) Fall Time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) Reverse Recovery Time trr Reverse Recovery Charge Qrr Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 → 0 V Test Circuit 2 Switching Time D.U.T. L VDD 50 Ω VGS RL RG RG = 10 Ω PG. VGS Wave Form 0 VGS (on) 10 % 90 % VDD 90 % ID 90 % BVDSS IAS ID ID VGS 0 VDS I D Wave Form t VDD Starting Tch t = 1 µs Duty Cycle ≤ 1 % 0 10 % 10 % td (on) tr ton td (off) tf toff Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2499, 2SK2499-Z TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 20 40 60 80 120 100 80 60 40 20 0 100 120 140 160 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1000 Pulsed PW ID(pulse) 200 =1 0 s VGS = 20 V 0 1 ID(DC) m er Di ss 10 s m s 10 Po w s ipa DC tio n Lim 160 VGS = 10 V 120 VGS = 4V 80 40 ite TC = 25 ˚C Single Pulse 1 0.1 ID - Drain Current - A 100 10 µ ID - Drain Current - A µ d ite V) im 0 )L =1 n o S S( RD t VG (a d 1 10 100 VDS - Drain to Source Voltage - V 0 1 2 3 4 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 1000 Pulsed 100 10 Ta=–25 ˚C 25 ˚C 125 ˚C 1 0 VDS=10V 2 4 6 8 VGS- Gate to Source Voltage - V 3 2SK2499, 2SK2499-Z TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 83.3 ˚C/W 100 10 1 Rth(ch-c) = 1.67 ˚C/W 0.1 0.01 Single Pulse 0.001 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 1000 VDS=10V Pulsed 100 10 1 1 100 10 1000 RDS(on) - Drain to Source On-State Resistance - mΩ ID- Drain Current - A 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 20 Pulsed 30 20 VGS=4V 10 VGS=10V 0 10 100 ID - Drain Current - A 1000 ID=25A 10 0 20 10 30 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - mΩ PW - Pulse Width - s VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 20 15 ISD - Diode Forward Current - A VGS=4V 10 VGS=10V 5 100 10 4V VGS = 0 1 0.1 ID = 25A 0 - 50 0 50 100 0 150 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 f = 1 MHz 10 000 Ciss 100 0.1 Coss Crss 1 000 1 10 100 td(off) tf 100 tr td(on) 10 VDD =30V VGS =10V RG =10Ω 1.0 0.1 1.0 di/dt =100A/µs VGS = 0 100 10 1.0 0.1 1.0 10 ID - Drain Current - A 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V trr - Reverse Recovery time - ns Ciss, Coss, Crss - Capacitance - pF 100 000 1.5 1.0 0.5 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 80 VDD=48V ID = 50A 14 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2499, 2SK2499-Z 12 60 10 VDS VGS 8 40 6 20 4 2 0 50 100 150 0 200 Qg - Gate Charge - nC 5 2SK2499, 2SK2499-Z SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 IAS = 50 A EAS =2 10 mJ 1.0 VDD = 30 V VGS = 20 V → 0 0.1 RG = 25 Ω 10 µ 100 µ VDD = 30 V RG = 25 Ω VGS = 20 V → 0 IAS <= 50 A 140 120 100 80 60 40 20 1m L - Inductive Load - H 6 50 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C 2SK2499, 2SK2499-Z REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system. TEI-1202 Quality grade on NEC semiconductor devices. IEI-1209 Semiconductor device mounting technology manual. IEI-1207 Semiconductor device package manual. IEI-1213 Guide to quality assurance for semiconductor devices. MEI-1202 Semiconductor selection guide. MF-1134 Power MOS FET features and application switching power supply. TEA-1034 Application circuits using Power MOS FET. TEA-1035 Safe operating area of Power MOS FET. TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2499, 2SK2499-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8