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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
The 2SK2499 is N-Channel MOS Field Effect Transistor de-
(in millimeters)
• Low On-Resistance
3.6 ± 0.2
4
6.0 MAX.
1 2 3
1.3 ± 0.2
0.75 ± 0.1
2.54
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±50
A
Drain Current (pulse)*
ID(pulse)
±200
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
75
W
(10.0)
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5
W
4
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
Single Avalanche Current**
IAS
50
A
Single Avalanche Energy**
EAS
250
mJ
*
PW ≤ 10 µs, Duty Cycle ≤ 1 %
4.8 MAX.
1.5 MAX.
8.5 ± 0.2
1.3 ± 0.2
1.4 ± 0.2
1.0 ± 0.3
(2.54) (2.54)
1 2 3
2.8 ± 0.2
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
1.0 ± 0.5
–55 to +150 ˚C
0.5 ± 0.2
2.8 ± 0.2
2.54
1.1 ± 0.4
3.0 ± 0.5
• Low Ciss Ciss = 3 400 pF TYP.
• High Avalanche Capability.
• Built-in G-S Protection Diode
1.3 ± 0.2
10.0
RDS(on)1 = 9 mΩ (VGS = 10 V, ID = 25 A)
RDS(on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)
4.8 MAX.
10.6 MAX.
5.9 MIN.
FEATURES
12.7 MIN. 15.5 MAX.
3.0 ± 0.3
signed for high current switching applications.
R) )
.5 R
(0 0.8
(
1.
2.
3.
4.
0.5 ± 0.2
Gate
Drain
Source
Fin (Drain)
MP-25Z (SURFACE MOUNT TYPE)
Drain
Body
Diode
Gate
Gate Protection Diode
Source
Document No. D10045EJ1V0DS00 (1st edition)
Date Published May 1995 P
Printed in Japan
©
1995
2SK2499, 2SK2499-Z
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
TYP.
MAX.
UNIT
RDS(on)1
7.3
9.0
mΩ
VGS = 10 V, ID = 25 A
RDS(on)2
11
14
mΩ
VGS = 4 V, ID = 25 A
2.0
V
VDS = 10 V, ID = 1 mA
S
VDS = 10 V, ID = 25 A
CHARACTERISTIC
SYMBOL
Drain to Source On-State Resistance
MIN.
TEST CONDITIONS
Gate to Source Cutoff Voltage
VGS(off)
1.0
1.5
Forward Transfer Admittance
| yfs |
20
58
Drain Leakage Current
IDSS
10
µA
VDS = 60 V, VGS = 0
Gate to Source Leakage Current
IGSS
±10
µA
VGS = ±20 V, VDS = 0
Input Capacitance
Ciss
3 400
pF
VDS = 10 V
Output Capacitance
Coss
1 600
pF
VGS = 0
Reverse Transfer Capacitance
Crss
770
pF
f = 1 MHz
Turn-On Delay Time
td(on)
55
ns
ID = 25 A
Rise Time
tr
360
ns
VGS(on) = 10 V
480
ns
VDD = 30 V
360
ns
RG = 10 Ω
152
nC
ID = 50 A
11
nC
VDD = 48 V
60
nC
VGS = 10 V
0.92
V
IF = 50 A, VGS = 0
105
ns
IF = 50 A, VGS = 0
265
nC
di/dt = 100 A/µs
Turn-Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Test Circuit 1 Avalanche Capability
D.U.T.
RG = 25 Ω
PG
VGS = 20 → 0 V
Test Circuit 2 Switching Time
D.U.T.
L
VDD
50 Ω
VGS
RL
RG
RG = 10 Ω
PG.
VGS
Wave Form
0
VGS (on)
10 %
90 %
VDD
90 %
ID
90 %
BVDSS
IAS
ID
ID
VGS
0
VDS
I
D
Wave Form
t
VDD
Starting Tch
t = 1 µs
Duty Cycle ≤ 1 %
0
10 %
10 %
td (on)
tr
ton
td (off)
tf
toff
Test Circuit 3 Gate Charge
D.U.T.
IG = 2 mA
PG.
50 Ω
RL
VDD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
2SK2499, 2SK2499-Z
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
140
100
80
60
40
20
0
20
40
60
80
120
100
80
60
40
20
0
100 120 140 160
20
40
60
80
100 120 140 160
TC - Case Temperature - ˚C
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
Pulsed
PW
ID(pulse)
200
=1
0
s
VGS = 20 V
0
1
ID(DC)
m
er
Di
ss
10
s
m
s
10
Po
w
s
ipa
DC
tio
n
Lim
160
VGS = 10 V
120
VGS = 4V
80
40
ite
TC = 25 ˚C
Single Pulse
1
0.1
ID - Drain Current - A
100
10
µ
ID - Drain Current - A
µ
d
ite V)
im 0
)L =1
n
o S
S(
RD t VG
(a
d
1
10
100
VDS - Drain to Source Voltage - V
0
1
2
3
4
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
1000
Pulsed
100
10
Ta=–25 ˚C
25 ˚C
125 ˚C
1
0
VDS=10V
2
4
6
8
VGS- Gate to Source Voltage - V
3
2SK2499, 2SK2499-Z
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
1 000
Rth(ch-a) = 83.3 ˚C/W
100
10
1
Rth(ch-c) = 1.67 ˚C/W
0.1
0.01
Single Pulse
0.001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1 000
1000
VDS=10V
Pulsed
100
10
1
1
100
10
1000
RDS(on) - Drain to Source On-State Resistance - mΩ
ID- Drain Current - A
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
Pulsed
30
20
VGS=4V
10
VGS=10V
0
10
100
ID - Drain Current - A
1000
ID=25A
10
0
20
10
30
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cutoff Voltage - V
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - mΩ
PW - Pulse Width - s
VDS = 10 V
ID = 1 mA
2.0
1.5
1.0
0.5
0
–50
0
50
100
150
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
20
15
ISD - Diode Forward Current - A
VGS=4V
10
VGS=10V
5
100
10
4V
VGS = 0
1
0.1
ID = 25A
0
- 50
0
50
100
0
150
VSD - Source to Drain Voltage - V
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1 000
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0
f = 1 MHz
10 000
Ciss
100
0.1
Coss
Crss
1 000
1
10
100
td(off)
tf
100
tr
td(on)
10
VDD =30V
VGS =10V
RG =10Ω
1.0
0.1
1.0
di/dt =100A/µs
VGS = 0
100
10
1.0
0.1
1.0
10
ID - Drain Current - A
100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
trr - Reverse Recovery time - ns
Ciss, Coss, Crss - Capacitance - pF
100 000
1.5
1.0
0.5
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
80
VDD=48V
ID = 50A
14
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - mΩ
2SK2499, 2SK2499-Z
12
60
10
VDS
VGS
8
40
6
20
4
2
0
50
100
150
0
200
Qg - Gate Charge - nC
5
2SK2499, 2SK2499-Z
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
IAS = 50 A
EAS
=2
10
mJ
1.0
VDD = 30 V
VGS = 20 V → 0
0.1 RG = 25 Ω
10 µ
100 µ
VDD = 30 V
RG = 25 Ω
VGS = 20 V → 0
IAS <= 50 A
140
120
100
80
60
40
20
1m
L - Inductive Load - H
6
50
Energy Derating Factor - %
IAS - Single Avalanche Current - A
100
10 m
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
2SK2499, 2SK2499-Z
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system.
TEI-1202
Quality grade on NEC semiconductor devices.
IEI-1209
Semiconductor device mounting technology manual.
IEI-1207
Semiconductor device package manual.
IEI-1213
Guide to quality assurance for semiconductor devices.
MEI-1202
Semiconductor selection guide.
MF-1134
Power MOS FET features and application switching power supply.
TEA-1034
Application circuits using Power MOS FET.
TEA-1035
Safe operating area of Power MOS FET.
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
7
2SK2499, 2SK2499-Z
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8