2SJ495 DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
This product is P-Channel MOS Field Effect Transistor
(in millimeter)
designed for high current switching applications.
10.0 ± 0.3
3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
FEATURES
4 ± 0.2
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–60
V
Gate to Source Voltage*
VGSS(AC)
m20
V
Gate to Source Voltage
VGSS(DC)
–20, 0
V
0.7 ± 0.1
2.54
ID(DC)
m30
A
ID(pulse)
m120
A
Total Power Dissipation (TC = 25°C)
PT
35
W
Total Power Dissipation (TA = 25°C)
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Drain Current (DC)
Drain Current (pulse)**
12.0 ± 0.2
RDS(on)2 = 56 mΩ MAX. (VGS = –4 V, ID = –15 A)
• Low Ciss Ciss = 4120 pF TYP.
13.5 MIN.
RDS(on)1 = 30 mΩ MAX. (VGS = –10 V, ID = –15 A)
3 ± 0.1
15.0 ± 0.3
• Super Low On-State Resistance
1.3 ± 0.2
1.5 ± 0.2
2.54
2.5 ± 0.1
0.65 ± 0.1
1. Gate
2. Drain
3. Source
1 2 3
*f = 20 kHz, Duty Cycle ≤ 10% (+Side)
**PW ≤ 10 µs, Duty Cycle ≤ 1%
THERMAL RESISTANCE
MP-45F (ISOLATED TO-220)
Channel to Case
Rth(ch-c)
3.57
°C/W
Channel to Ambient
Rth(ch-A)
62.5
°C/W
Drain
Body
Diode
Gate
Gate Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice
acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D11267EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan
©
1997
2SJ495
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
Drain to Source On–state Resistance
RDS(on)1
TYP.
MAX.
UNIT
VGS = –10 V, ID = –15 A
24
30
mΩ
RDS(on)2
VGS = –4 V, ID = –15 A
38
56
mΩ
Gate to Source Cutoff Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.5
–2.0
V
Forward Transfer Admittance
| yfs |
VDS = –10 V, ID = –15 A
12
24
Drain Leakage Current
IDSS
VDS = –60 V, VGS = 0
–10
µA
Gate to Source Leakage Current
IGSS
VGS = m 20 V, VDS = 0
m10
µA
Input Capacitance
Ciss
VDS = –10 V
4120
pF
Output Capacitance
COSS
VGS = 0
1750
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
580
pF
Turn-On Delay Time
td(on)
ID = –15 A
40
ns
VGS(on) = –10 V
220
ns
VDD = –30 V
600
ns
tf
RG = 10 Ω
380
ns
Total Gate Charge
QG
ID = –30 A
140
nC
Gate to Source Charge
QGS
VDD = –48 V
12
nC
Gate to Drain Charge
QGD
VGS = –10 V
46
nC
VF(S-D)
IF = 30 A, VGS = 0
0.8
Reverse Recovery Time
trr
IF = 30 A, VGS = 0
160
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
400
nC
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Body Diode Forward Voltage
TEST CONDITIONS
Test Circuit 1 Switching Time
MIN.
RL
VGS
VGS
RG
RG = 10 Ω
Wave Form
VGS(on)
10 %
D
ID
Wave Form
t
t = 1 µs
Duty Cycle ≤ 1%
2
90 %
PG.
VDD
90 %
ID
VGS
0
1.5
V
Test Circuit 2 Gate Charge
D.U.T.
PG.
S
90 %
0
ID
10 %
td(on)
ton
tr
10 %
td(off)
tf
toff
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
2SJ495
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
35
100
80
60
40
20
0
20
40
60
80
30
25
20
15
10
5
0
100 120 140 160
20
40
60
80
100 120 140 160
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–1000
Pulsed
–125
VGS = –10 V
d
ite )
Lim 0 V
(
=1
S
S
R D VG
t
(a
ID - Drain Current - A
–100
50
0
1
m
)
on
s
ID(DC)
10
s
µ
ID - Drain Current - A
ID(pulse)
m
s
10
0
Po
we
–10
iss
DC
ipa
tio
n
–75
–50
VGS = –4 V
–25
Lim
ite
TC = 25°C
Single Pulse
–1
–0.1
m
s
rD
–100
d
–1
–10
–100
VDS - Drain to Source Voltage - V
0
–2
–4
–6
–8
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
–1000
–100
Pulsed
Tch = –25°C
25°C
125°C
–10
–1
0
–2
–4
VDS = –10 V
–6
–8
VGS - Gate to Source Voltage - V
3
2SJ495
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1 000
Rth(ch-a) = 62.5°C/W
100
10
Rth(ch-c) = 3.57°C/W
1
0.1
0.01
Single Pulse
0.001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1 000
1000
100
VDS = –10 V
Pulsed
Tch=–25°C
25°C
75°C
125°C
10
1
–1
–10
–100
–1000
RDS(on) - Drain to Source On-State Resistance - mΩ
ID- Drain Current - A
80
Pulsed
60
VGS = –4 V
40
VGS = –10 V
20
0
–1
–10
ID - Drain Current - A
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
150
Pulsed
100
50
ID = –15 A
0
–100
–10
–20
–30
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cutoff Voltage - V
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - mΩ
PW - Pulse Width - s
VDS = –10 V
ID = –1 mA
–2.0
–1.5
–1.0
–0.5
0
–50
0
50
100
150
Tch - Channel Temperature - °C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
80
VGS = –4 V
60
VGS=-10 V
40
20
ISD - Diode Forward Current - A
–1000
–100
VGS = –4 V
–10
VGS = 0
–1
ID = –15 A
0
–50
0
50
100
0
150
Tch - Channel Temperature - °C
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
1 000
VGS = 0
f = 1 MHz
10000
Ciss
Coss
1000
Crss
100
–0.1
–1
–10
–100
100
td(off)
tf
10
tr
td(on)
1
–0.1
–1
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 50 A/ µs
VGS = 0
100
10
1
–0.1
–1
–10
IF - Diode Current - A
VDD = –30 V
VGS = –10 V
RG =10 Ω
–10
–100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
–3.0
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100000
–2.0
–1.0
–100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–80
ID = –30A
–14
–60
–40
VGS
–12
–10
VDD=–48 V
–30 V
–15 V
–8
–6
–4
–20
–2
VDS
0
40
80
120
160
0
QG - Gate Charge - nC
5
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - mΩ
2SJ495
2SJ495
Document Name
6
Document No.
NEC semicondacter device reliabilty/quality control system
C11745E
Power MOS FET features and application to switching power supply
D12971E
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
Guide to prevent damage for semiconductor devices by electrostatic discharge (EDS)
C11892E
2SJ495
[MEMO]
7
2SJ495
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5