To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • • • • Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 1 Gate resistor G Temperature Sencing Circuit Latch Circuit 1 Gate Shutdown Circuit S Rev.1.00, May.13.2003, page 1 of 11 2 3 2 3 1. Gate 2. Drain (Flange) 3. Source HAF1008(L), HAF1008(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –60 V Gate to source voltage VGSS –16 V Gate to source voltage VGSS 2.5 V Drain current ID –20 A –40 A –20 A Drain peak current ID (pulse) Note1 Body-drain diode reverse drain IDR current Channel dissipation PchNote2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Typical Operation Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Input voltage VIH –3.5 — — V VIL — — –1.2 V IIH1 — — –100 µA Vi = –8 V, VDS = 0 IIH2 — — –50 µA Vi = –3.5 V, VDS = 0 IIL — — –1 µA Vi = –1.2 V, VDS = 0 Input current (Gate shut down) IIH(sd)1 — –0.8 — mA Vi = –8 V, VDS = 0 IIH(sd)2 — –0.35 — mA Vi = –3.5 V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage Vop –3.5 — –12 V Input current (Gate non shut down) Rev.1.00, May.13.2003, page 2 of 11 Test Conditions HAF1008(L), HAF1008(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current ID1 –7 — — A VGS = –3.5 V, VDS = –2 V Drain current ID2 — — –10 mA VGS = –1.2 V, VDS = –2 V Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS –16 — — V IG = –800 µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS 2.5 — — V IG = 100 µA, VDS = 0 Gate to source leak current IGSS1 — — –100 µA VGS = –8 V, VDS = 0 IGSS2 — — –50 µA VGS = –3.5 V, VDS = 0 IGSS3 — — –1 µA VGS = –1.2 V, VDS = 0 IGSS4 — — 100 µA VGS = 2.4 V, VDS = 0 IGS(OP)1 — –0.8 — mA VGS = –8 V, VDS = 0 IGS(OP)2 — –0.35 — mA VGS = –3.5 V, VDS = 0 IDSS — — –10 µA VDS = –60 V, VGS = 0 Gate to source cutoff voltage VGS(off) –1.1 — –2.15 V VDS = –10 V, ID = –1 mA Forward transfer admittance 10 18.5 — S ID = –10 A, VDS = –10 V Note3 Static drain to source on state RDS(on) resistance RDS(on) — 60 80 mΩ ID = –10 A, VGS = –4 V Note3 — 42 54 mΩ ID = –10 A, VGS = –10 V Note3 Output capacitance Coss — 865 ― pF VDS = –10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 5.7 ― µs VGS = -10 V, ID= –10 A, RL = 3 Ω Rise time tr — 26 — µs Turn-off delay time td(off) — 6.5 ― µs Fall time tf — 9 — µs Body–drain diode forward voltage VDF — -0.9 — V IF = –20 A, VGS = 0 Body–drain diode reverse recovery time trr — 100 — ns IF = –20 A, VGS = 0 diF/dt = 50A/µs Over load shut down Note4 operation time tos1 — 1.84 — ms VGS = –5 V, VDD = –16 V tos2 — 1 — ms VGS = –5 V, VDD = –24 V Input current (shut down) Zero gate voltage drain current |yfs| Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. Rev.1.00, May.13.2003, page 3 of 11 HAF1008(L), HAF1008(S) Main Characteristics Power vs. Temperature Derating -500 (A) -200 Drain Current ID 60 40 20 50 100 Case Temperature (A) Drain Current ID Op er -5 -2 PW Operation in this area is limited by RDS(on) at ion 1 = µs m s 10 m s c= 25 (T °C ) Ta = 25°C -0.5 -1 -2 -5 -10 -20 -50 -100 Drain to Source Voltage VDS (V) -20 Typical Transfer Characteristics -8 V -40 -6 V -5 V -30 -4 V -20 VGS = -3.5 V -10 -16 -12 -8 Tc = -25°C -4 -2 -4 -6 -8 -10 Drain to Source Voltage VDS (V) Rev.1.00, May.13.2003, page 4 of 11 25°C 75°C V DS = -10 V Pulse Test Pulse Test 0 0 DC -10 Tc (°C) Typical Output Characteristics -10 V 10 -20 -0.3 200 (A) -50 150 Thermal shut down operation area -50 -0.5 0 Maximum Safe Operation Area -100 -1 Drain Current ID Channel Dissipation Pch (W) 80 0 -1 -2 -3 -4 -5 Gate to Source Voltage VGS (V) HAF1008(L), HAF1008(S) Pulse Test -0.8 -0.6 I D = -10 A -0.4 -5 A -0.2 0 -2 -4 -6 -8 Drain to Source On State Resistance RDS(on) (mΩ) Gate to Source Voltage -10 Static Drain to Source on State Resistance vs. Temperature 100 Pulse Test I D = -10 A -5 A 80 -10 A V GS = -4 V -5 A 60 40 -10 V 20 0 -25 0 25 50 75 100 125 150 Case Temperature Rev.1.00, May.13.2003, page 5 of 11 200 Pulse Test 100 V GS = -4 V 50 -10 V 20 10 -0.1 -0.2 Tc (°C) -0.5 -1 -2 -5 -10 -20 -50 Drain Current ID (A) VGS (V) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) -1 Static Drain to Source Sate Resistance vs. Drain Current Drain to Source On State Resistance VDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 50 20 V DS = -10 V Pulse Test Tc = -25°C 10 25°C 5 75°C 2 1 0.5 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 Drain Current ID (A) -50 HAF1008(L), HAF1008(S) 200 100 50 di / dt = 50 A / µs V GS = 0, Ta = 25°C 20 Switching Characteristics 100 Switching Time t (µs) Reverse Recovery Time trr (ns) 500 Body to Drain Diode Reverse recovery Time 50 tr 20 tf 10 t d(off) 5 t d(on) 2 1 10 VGS = -10 V, VDD = -30 V PW = 300 µs, duty < 1 % 0.5 -0.1 -0.2 -0.5 -1 -2 -5 Reverse Drain Current -10 -20 -50 -0.1 -0.2 -2 Drain Current Reverse Drain Current vs. Source to Drain Voltage -5 ID -10 -20 -50 (A) Typical capacitance vs. Drain to Source Voltage 10000 -20 Pulse Test -16 Capacitance C (pF) Reverse Drain Current IDR (A) -0.5 -1 IDR (A) VGS = -5 V -12 0V -8 1000 -4 0 VGS = 0 f = 1 MHz 100 -0.4 -0.8 -1.2 Source to Drain Voltage Rev.1.00, May.13.2003, page 6 of 11 -1.6 -2.0 VSD (V) 0 -10 -20 -30 -40 -50 Drain to Source Voltage VDS (V) -60 HAF1008(L), HAF1008(S) Gate to Source Voltage vs. Shutdown Time of Load-Short Test Shutdown Case Temperature vs. Gate to Source Voltage 200 -15 -10 -16 V V DD= -24 V -5 0 100 µ 1m 10 m Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) -20 180 160 140 120 I D = -5 A 100 0 -2 Shutdown Time of Load-Short Test Pw (S) -4 -6 Gate to Source Voltage -8 -10 VGS (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 0.5 0.3 0.2 0.1 2 0.0 .01 0 PDM e uls p ot D= PW T PW h 1s 0.01 10 µ θch - c(t) = γs (t) • θch - c θch - c = 2.50°C/W, Tc = 25°C 0.05 0.1 0.03 Tc = 25°C D=1 1 T 100 µ 1m 10 m Pulse Width PW (S) Rev.1.00, May.13.2003, page 7 of 11 100 m 1 10 HAF1008(L), HAF1008(S) Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor Vin 10% D.U.T. RL 90% Vin -10 V 50Ω V DD = -30 V Vout td(on) Rev.1.00, May.13.2003, page 8 of 11 90% 90% 10% 10% tr td(off) tf HAF1008(L), HAF1008(S) Package Dimensions As of January, 2003 4.44 ± 0.2 10.2 ± 0.3 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.2 0.86 +– 0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 11.0 ± 0.5 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 (1.4) Unit: mm 2.49 ± 0.2 0.4 ± 0.1 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, May.13.2003, page 9 of 11 LDPAK (L) — — 1.40 g HAF1008(L), HAF1008(S) As of January, 2003 Unit: mm (1.5) 10.0 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.7 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 2.2 1.37 ± 0.2 2.54 ± 0.5 0.2 0.86 +– 0.1 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 1.3 ± 0.2 Package Code JEDEC JEITA Mass (reference value) Rev.1.00, May.13.2003, page 10 of 11 LDPAK (S)-(1) — — 1.30 g HAF1008(L), HAF1008(S) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Renesas Technology Corporation, All rights reserved. Printed in Japan. Colophon 0.0 Rev.1.00, May.13.2003, page 11 of 11