Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Ceramic surface mount package • Hermetically sealed • Small package minimizes circuit board area required • Electrical performance similar to a 2N2907 • Qualification per MIL-PRF-19500/558 Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Emitter-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA Operating and Storage (TJ, Tstg) . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Power Dissipation (total device) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W(1) Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 V Description Notes: (1) Derate linearly 8.57 mW/o C above TA = 25o C. The JANTX2N6987U is a hermetically sealed, ceramic surface-mount device, consisting of 4 silicon PNP transistors. The 20 pin ceramic package is ideal for designs where board space and device weight are important design considerations. Schematic Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is VCB = 30 V, PD = 250 mW each transistor, TA = 25o C. Refer to MIL-PRF-19500/558 for complete requirements. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-18 (972)323-2200 Fax (972)323-2396 Type JANTX, JANTXV, 2N6987U Electrical Characterics (TA = 25o C unless otherwise noted) SYMBOL Off Characteristics PARAMETER MIN MAX UNITS TEST CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage 60 V IC = 10 mA V(BR)CEO Collector-Emitter Breakdown Voltage 60 V IC = 10 mA(2) V(BR)EBO Emitter-Base Breakdown Voltage 5 V IE = 10 µA ICBO1 Collector-Base Cutoff Current 10 nA VCB = 50 V ICBO2 Collector-Base Cutoff Current 10 µA VCB = 50 V, TA = 150o C IEBO Emitter-Base Cutoff Current 50 nA VEB = 3.5 V On Characteristics hFE1 Forward Current Transfer Ratio 75 hFE2 Forward Current Transfer Ratio 100 VCE = 10 V, IC = 0.1 mA hFE3 Forward Current Transfer Ratio 100 hFE4 Forward Current Transfer Ratio 100 hFE5 Forward Current Transfer Ratio 50 VCE = 10 V, IC = 500 mA(2) hFE6 Forward Current Transfer Ratio 50 VCE = 10 V, IC = 1 mA, TA = -55o C(2) 450 VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA(2) VCE = 10 V, IC = 150 mA(2) 300 VCE(SAT)1 Collector-Emitter Saturation Voltage 0.4 V IC = 150 mA, IB = 15 mA(2) VCE(SAT)2 Collector-Emitter Saturation Voltage 1.6 V IC = 500 mA, IB = 50 mA(2) VBE(SAT)1 Base-Emitter Saturation Voltage 1.3 V IC = 150 mA, IB = 15 mA(2) VBE(SAT)2 Base-Emitter Saturation Voltage 2.6 V IC = 500 mA, IB = 50 mA(2) Small-Signal Characteristics hfe hfe Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio Small-Signal Short Circuit Forward Current Transfer Ratio 2 VCE = 20 V, IC = 50 mA, f = 100 MHz 8 VCE = 10 V, IC = 1 mA, f = 1 kHz 100 Cobo Open Circuit Output Capacitance 8 pF VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz Cibo Input Capacitance 30 pF VEB = 2 V, IC = 0, 100 kHz ≤ f ≤ 1 MHz Switchcing Characteristics ton Turn-On Time 45 ns VCC = 30 V, IC = 150 mA, IB = 15 mA toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 10k MΩ Vt-t = 500 V Transistor to Transistor Isolation Rt-t Isolation Resistance (2) Pulsed Test: Pulse Width = 300 µs ±50, 1-2 % Duty Cycle. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-19 (972)323-2200 Fax (972)323-2396