SEMICOA 2N3485A_02

2N3485A
Silicon PNP Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose switching
• Low power
• PNP silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3485AJ)
• JANTX level (2N3485AJX)
• JANTXV level (2N3485AJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
•
•
•
•
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/392
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
TC = 25°C unless otherwise specified
Symbol
VCEO
Rating
60
Collector-Base Voltage
VCBO
60
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
5
Volts
IC
600
mA
0.5
3.08
2.0
11.43
0.325
87
mW
mW/°C
mW
mW/°C
-65 to +200
°C
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 37.5°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
PT
PT
Thermal Resistance
RθJA
RθJC
Operating Junction Temperature
Storage Temperature
TJ
TSTG
Copyright 2002
Rev. F
°C/W
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N3485A
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
V(BR)CEO
Test Conditions
Min
IC = 10 mA
Typ
On Characteristics
Units
Volts
10
10
10
10
50
µA
nA
µA
µA
nA
60
VCB = 60 Volts
VCB = 50 Volts
VCB = 50 Volts, TA = 150°C
VEB = 5 Volts
VEB = 3.5 Volts
ICBO1
ICBO2
ICBO3
IEBO1
IEBO2
Max
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
TA = -55°C
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Min
40
40
40
40
40
20
Test Conditions
VCE = 20 Volts, IC = 50 mA,
f = 100 MHz
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
Units
120
1.3
2.6
0.4
1.6
Volts
Max
Units
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
|hFE|
hFE
Open Circuit Output Capacitance
COBO
Open Circuit Input Capacitance
CIBO
Typ
2.0
10
40
8
pF
30
pF
Switching Characteristics
Saturated Turn-On Time
tON
45
ns
Saturated Turn-Off Time
tOFF
175
ns
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2