2N2905A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2905AJ) • JANTX level (2N2905AJX) • JANTXV level (2N2905AJV) • JANS level (2N2905AJS) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features • Radiation testing (total dose) upon request • • • • Hermetically sealed TO-39 metal can Also available in chip configuration Chip geometry 0600 Reference document: MIL-PRF-19500/290 Benefits • Qualification Levels: JAN, JANTX, JANTXV and JANS • Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter TC = 25°C unless otherwise specified Symbol Rating Collector-Emitter Voltage VCEO 60 Collector-Base Voltage VCBO 60 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts IC 600 mA 0.8 5.7 3.0 17.2 Collector Current, Continuous Power Dissipation, TA = 25 °C Derate above 60 °C Power Dissipation, TC = 25 °C Derate above 25 °C Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. H RθJA 175 W mW/°C W mW/°C °C/W TJ -65 to +200 °C TSTG -65 to +200 °C PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 1 2N2905A Silicon PNP Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage V(BR)CEO Test Conditions Min IC = 10 mA Typ Max Units Volts 60 Collector-Base Cutoff Current ICBO1 VCB = 60 Volts 10 µA Collector-Base Cutoff Current ICBO2 VCB = 50 Volts 10 nA Collector-Base Cutoff Current ICBO3 VCB = 50 Volts, TA = 150OC 10 µA Collector-Emitter Cutoff Current ICES VCE = 60 Volts 1 µA Emitter-Base Cutoff Current IEBO1 VEB = 5 Volts 10 µA Emitter-Base Cutoff Current IEBO2 VEB = 3.5 Volts 50 nA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1.0 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55OC IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 75 100 100 100 50 50 Test Conditions VCE = 20 Volts, IC = 50 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VEB = 2.0 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 450 300 1.3 2.6 0.4 1.6 Volts Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ Max Units 8 pF 30 pF 45 300 ns 2.0 100 Switching Characteristics Saturated Turn-On Time Saturated Turn-Off Time Copyright 2002 Rev. H ton toff ns Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2