STMICROELECTRONICS 2N2905A

2N2905A
Silicon PNP Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose
• Low power
• PNP silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N2905AJ)
• JANTX level (2N2905AJX)
• JANTXV level (2N2905AJV)
• JANS level (2N2905AJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Features
• Radiation testing (total dose) upon request
•
•
•
•
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 0600
Reference document:
MIL-PRF-19500/290
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
TC = 25°C unless otherwise specified
Symbol
Rating
Collector-Emitter Voltage
VCEO
60
Collector-Base Voltage
VCBO
60
Unit
Volts
Volts
Emitter-Base Voltage
VEBO
5
Volts
IC
600
mA
0.8
5.7
3.0
17.2
Collector Current, Continuous
Power Dissipation, TA = 25 °C
Derate above 60 °C
Power Dissipation, TC = 25 °C
Derate above 25 °C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Copyright 2002
Rev. H
RθJA
175
W
mW/°C
W
mW/°C
°C/W
TJ
-65 to +200
°C
TSTG
-65 to +200
°C
PT
PT
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 1
2N2905A
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Collector-Emitter Breakdown Voltage
V(BR)CEO
Test Conditions
Min
IC = 10 mA
Typ
Max
Units
Volts
60
Collector-Base Cutoff Current
ICBO1
VCB = 60 Volts
10
µA
Collector-Base Cutoff Current
ICBO2
VCB = 50 Volts
10
nA
Collector-Base Cutoff Current
ICBO3
VCB = 50 Volts, TA = 150OC
10
µA
Collector-Emitter Cutoff Current
ICES
VCE = 60 Volts
1
µA
Emitter-Base Cutoff Current
IEBO1
VEB = 5 Volts
10
µA
Emitter-Base Cutoff Current
IEBO2
VEB = 3.5 Volts
50
nA
On Characteristics
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 0.1 mA, VCE = 10 Volts
IC = 1.0 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55OC
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Min
75
100
100
100
50
50
Test Conditions
VCE = 20 Volts, IC = 50 mA,
f = 100 MHz
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
VCB = 10 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
VEB = 2.0 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
Units
450
300
1.3
2.6
0.4
1.6
Volts
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
|hFE|
hFE
Open Circuit Output Capacitance
COBO
Open Circuit Input Capacitance
CIBO
Typ
Max
Units
8
pF
30
pF
45
300
ns
2.0
100
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
Copyright 2002
Rev. H
ton
toff
ns
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2