MICROSEMI 2N5582

2N5581
Silicon NPN Transistor
Data Sheet
Description
Applications
Semicoa Semiconductors offers:
• General purpose switching
• Low power
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5581J)
• JANTX level (2N5581JX)
• JANTXV level (2N5581JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
•
•
•
•
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Copyright 2002
Rev. D
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/423
TC = 25°C unless otherwise specified
Symbol
VCEO
Rating
50
VCBO
75
Unit
Volts
Volts
IC
800
mA
500
2.86
2
11.43
TJ
-55 to+200
mW
mW/°C
W
mW/°C
°C
TSTG
-55 to+200
°C
PT
PT
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 1 of 2
2N5581
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
V(BR)CEO
Test Conditions
Min
IC = 10 mA
Typ
On Characteristics
Units
Volts
10
10
10
10
10
µA
nA
µA
µA
nA
50
VCB = 75 Volts
VCB = 60 Volts
VCB = 60 Volts, TA = 150°C
VEB = 6 Volts
VEB = 4 Volts
ICBO1
ICBO2
ICBO3
IEBO1
IEBO2
Max
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter
Symbol
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 0.1 mA, VCE = 10 Volts
IC = 1 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
IC = 150 mA, VCE = 10 Volts
IC = 500 mA, VCE = 10 Volts
IC = 10 mA, VCE = 10 Volts
TA = -55°C
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Min
30
35
40
40
20
15
Test Conditions
VCE = 20 Volts, IC = 50 mA,
f = 100 MHz
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
Units
120
1.2
2.0
0.3
1.0
Volts
Max
Units
8
pF
25
pF
Max
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Symbol
|hFE|
hFE
Open Circuit Output Capacitance
COBO
Open Circuit Input Capacitance
CIBO
Typ
2.5
30
Switching Characteristics
Parameter
Saturated Turn-On Time
tON
35
Units
ns
Saturated Turn-Off Time
tOFF
300
ns
Copyright 2002
Rev. D
Symbol
Test Conditions
Min
Typ
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
Page 2 of 2