2N5581 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N5581J) • JANTX level (2N5581JX) • JANTXV level (2N5581JV) • QCI to the applicable level • 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing (total dose) upon request Features • • • • Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 • Qualification Levels: JAN, JANTX, and JANTXV • Radiation testing available Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25°C Derate linearly above 25°C Power Dissipation, TC = 25°C Derate linearly above 25°C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. D Hermetically sealed TO-46 metal can Also available in chip configuration Chip geometry 0400 Reference document: MIL-PRF-19500/423 TC = 25°C unless otherwise specified Symbol VCEO Rating 50 VCBO 75 Unit Volts Volts IC 800 mA 500 2.86 2 11.43 TJ -55 to+200 mW mW/°C W mW/°C °C TSTG -55 to+200 °C PT PT Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N5581 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current V(BR)CEO Test Conditions Min IC = 10 mA Typ On Characteristics Units Volts 10 10 10 10 10 µA nA µA µA nA 50 VCB = 75 Volts VCB = 60 Volts VCB = 60 Volts, TA = 150°C VEB = 6 Volts VEB = 4 Volts ICBO1 ICBO2 ICBO3 IEBO1 IEBO2 Max Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBEsat1 VBEsat2 VCEsat1 VCEsat2 Test Conditions IC = 0.1 mA, VCE = 10 Volts IC = 1 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts IC = 150 mA, VCE = 10 Volts IC = 500 mA, VCE = 10 Volts IC = 10 mA, VCE = 10 Volts TA = -55°C IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Min 30 35 40 40 20 15 Test Conditions VCE = 20 Volts, IC = 50 mA, f = 100 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 120 1.2 2.0 0.3 1.0 Volts Max Units 8 pF 25 pF Max Volts Dynamic Characteristics Parameter Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE| hFE Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Typ 2.5 30 Switching Characteristics Parameter Saturated Turn-On Time tON 35 Units ns Saturated Turn-Off Time tOFF 300 ns Copyright 2002 Rev. D Symbol Test Conditions Min Typ Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2