ROHM UMZ18N

Zener Diode
UMZ18N
Dimensions(Unit : mm )
Applications
Voltage regulation
(Common anode dual chips)
Land size figure(Unit : mm)
1.3
0.3±0.1
0.15±0.05
2.1±0.1
1.25±0.1
(3)
Min.
0.8MIN
UMD3
Construction
Silicon epitaxial planer
0.1Min
0
to 0.1
0~0.1
(2)
(1)
(0.65)
0.65
0.9MIN.
Min.
各リードとも
Each lead has same dimension
同寸法
Features
1)Small mold type.(UMD3)
2)High reliability
1.6
2.0±0.2
(0.65)
0.7±0.1
1.3±0.1
0.9±0.1
Structure
(3)
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
(2)
(1)
Taping specifications(Unit : mm)
φ1.55±0.05
2.0±0.05
0.3±0.1
Power dissipation (*1)
Junction temperature
Storage temperature
φ0.5±0.05
4.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
2.4±0.1
8.0±0.2
1.25±0.1
Unit
mW
200
150
-55 to +150
P
Tj
Tstg
0~0.1
2.4±0.1
2.25±0.1
0
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
C
C
(*1) Total of 2 elements
Electical characteristic(Ta=25C)
Parameter
Symbol
VZ
Zener voltage
Reverse current
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IR
Min.
17.56
Typ.
-
Max.
18.35
Unit
V
-
-
0.10
μA
1/2
Conditions
IZ=5mA
VR=13V
2010.01 - Rev.A
UMZ18N
Data Sheet
Electrical characteristic curves
Ta=125C
Ta=-25C Ta=25C Ta=75C Ta=125C
10
100
100
1
0.1
0.01
0.001
1
Ta=25C
0.1
0.01
Ta=-25C
17
18
19
20
1
0
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
1
2
3
4
5
6
7
8
0
9 10 11 12 13
1
REVERSE CURRENT:IR(nA)
18
17.9
17.8
AVE:17.90V
17.7
0.8
0.7
0.6
0.5
0.4
0.3
0.2
4
6
8
10
12
14
20
Ta=25C
VR=13V
n=30pcs
0.9
AVE:0.0962nA
18
17
16
15
14
13
12
0.1
11
0
10
Vz DISRESION MAP
IR DISRESION MAP
Ta=25C
f=1MHz
VR=0V
n=10pcs
19
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
Ta=25C
IZ=5mA
n=10pcs
2
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
18.2
18.1
10
0.001
0.0001
16
ZENER VOLTAGE:Vz(V)
Ta=75C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR (nA)
ZENER CURRENT:Iz(mA)
f=1MHz
10
AVE:13.98pF
Ct DISRESION MAP
DYNAMIC IMPEDANCE:Zz( )
10000
1000
100
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
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©2010 ROHM Co., Ltd. All rights reserved.
10
2/2
2010.01 - Rev.A
Notice
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R1010A