General purpose transistor(50V,0.1A) 2SCR523M / 2SCR523EB / 2SCR523UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features 1) Complements the 2SAR523M / 2SAR523EB / 2SAR523UB. Applications Switch, LED driver Abbreviated symbol : NB EMT3F Packaging specifications (3) Package VMT3 EMT3F UMT3F Packaging Type Taping Taping Taping Code T2L TL TL Basic ordering unit (pieces) 8000 3000 3000 (1) (2) Abbreviated symbol : NB Type UMT3F 2.0 0.9 0.425 0.53 (1) (2) 0.65 0.65 1.3 2SCR523UB 0.53 2.1 2SCR523M 2SCR523EB (3) 1.25 0.425 0.32 0.13 Abbreviated symbol : NB Absolute maximum ratings (Ta=25C) Inner circuit Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Parameter Collector current ICP 2SCR523M,2SCR523EB Power dissipation PD 200 mA ∗2 150 mW 200 mW 150 −55 to +150 °C Tj Junction temperature Range of storage temperature (1) ∗1 2SCR523UB Tstg (3) (1) Base (2) Emitter (3) Collector (2) °C ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit BVCEO BVCBO 50 50 − − 5 V IE=50μA Collector cut-off current ICBO Emitter cut-off current IEBO VCE(sat) − − − − − 0.1 IC=1mA IC=50μA BVEBO − − V V μA μA V VCB=50V VEB=5V IC=50mA, IB=5mA DC current gain hFE 120 Transition frequency Output capacitance fT Cob − Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ − − − 0.1 0.10 − 0.30 350 1.6 − − MHz − pF 1/2 560 Conditions VCE=6V, IC=1mA VCE=10V, IE=−10mA, f=100MHz VCB=10V, IE=0A, f=1MHz 2010.09 - Rev.A 2SCR523M / 2SCR523EB / 2SCR523UB Data Sheet Electrical characteristics curves 0.1 VCE =2V 0.01 0 0.2 0.4 0.6 0.8 40 IB=250uA IB=200uA 20 IB=150uA IB=100uA 0 1 1 0.1 2 3 4 5 1 10 100 COLLECTOR CURRENT : IC (mA) Ta=125°C 25°C -55°C 10 IB=0A 0.1 Ta=125°C 25°C -55°C 0.1 1 10 100 COLLECTOR CURRENT : IC (mA) 1 10 100 COLLECTOR CURRENT : IC (mA) 1000 IC/IB= 10/1 0.01 0.01 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25°C IC/IB = 20/1 IC/IB =10/1 1 VCE=5V IB=50uA Ta=25°C 0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 30 10 BASE TO EMITTER VOLTAGE : VBE (V) 1 IB=300uA DC CURENT GAIN : hFE 1 1000 IB=350uA TRANSITION FREQUENCY :fT (MHz) Ta=125°C 25°C -55°C 10 IB=450uA IB=500uA IB=400uA 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 VCE = 10V Ta=25°C 100 10 0.1 1 10 100 1000 EMITTER CURRENT : IE (mA) 100 Cib Cob (pF) Cib (pF) 10 Cob 1 0 Ta=25°C f=1MHz IE=0 IC=0 0.01 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c 2009 ROHM Co., Ltd. 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