Preliminary Datasheet RJH60M6DPQ-E0 600V - 40A - IGBT Application: Inverter R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 Features • Short circuit withstand time (8 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 Ω, Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 1. Gate 2. Collector 3. Emitter 4. Collector G 1 2 E 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC IC(peak) Note1 IDF IDF(peak) Note1 PC Note2 θj-c Note2 θj-cd Note2 Tj Tstg Ratings 600 ±30 80 40 120 50 200 298 0.42 1.07 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 Page 1 of 9 RJH60M6DPQ-E0 Preliminary Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Symbol ICES / IR Min — Typ — Max 5 Unit μA IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf Eon — 5 — — — — — — — — — — — — — — — 1.8 2.2 2500 175 100 170 20 90 55 50 215 50 1.11 ±1 7 2.3 — — — — — — — — — — — — μA V V V pF pF pF nC nC nC ns ns ns ns mJ Eoff Etotal tsc — — 6 0.99 2.10 8 — — — mJ mJ μs FRD Forward voltage VF FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current trr Qrr Irr — — — — 1.3 100 0.22 5.0 1.8 — — — V ns μC A Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Test Conditions VCE = 600 V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 40 A, VGE = 15 V Note3 IC = 80 A, VGE = 15 V Note3 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 40 A VCC = 300 V VGE = 15 V IC = 40 A Rg = 5 Ω Inductive load Tc = 100 °C VCC ≤ 360 V, VGE = 15 V IF = 40 A Note3 IF = 40 A diF/dt = 100 A/μs Notes: 3. Pulse test. R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 Page 2 of 9 RJH60M6DPQ-E0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 100 300 Collector Current IC (A) Collector Dissipation Pc (W) 350 250 200 150 100 50 0 25 50 75 40 20 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off SOA 1000 100 PW 10 0 = μs 10 Collector Current IC (A) 140 μs 10 1 0.1 1 Tc = 25°C Single pulse 120 100 80 60 40 20 0 10 100 0 1000 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 120 120 Tc = 25°C Pulse Test 100 15 V 80 60 10 V 40 20 15 V Tc = 150°C Pulse Test 12 V Collector Current IC (A) Collector Current IC (A) 60 0 0 Collector Current IC (A) 80 100 12 V 80 10 V 60 40 VGE = 8 V 20 VGE = 8 V 0 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 RJH60M6DPQ-E0 Preliminary Collector to Emitter Saturation Voltage VCE(sat) (V) 5 Tc = 25°C Pulse Test 4 3 IC = 80 A 2 40 A 20 A 1 8 10 12 14 16 18 5 Tc = 150°C Pulse Test 4 3 IC = 80 A 2 1 8 12 14 16 18 20 Gate to Emitter Voltage VGE (V) Typical Transfer Characteristics Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Ta = 25°C 150°C 80 60 40 20 VCE = 10 V Pulse Test 0 0 4 8 12 16 20 4 VGE = 15 V Pulse Test 3 IC = 80 A 2 40 A 20 A 1 0 −25 0 25 50 75 100 125 150 Junction Temparature Tj (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) Frequency Characteristics (Typical) 10 35 8 IC = 10 mA 6 1 mA 4 2 VCE = 10 V Pulse Test 0 25 50 75 100 125 150 Junction Temparature Tj (°C) R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 Collector Current IC(RMS) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 10 Gate to Emitter Voltage VGE (V) 100 0 −25 40 A 20 A 20 120 Collector Current IC (A) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) 30 0 Collector current wave (Square wave) 25 20 15 Tj = 125°C 10 Tc = 90°C VCE = 400 V 5 VGE = 15 V Rg = 5 Ω duty = 50% 0 1 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH60M6DPQ-E0 Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2) 100 Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 td(off) 100 tf td(on) tr 10 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 10 1 Eoff Eon 0.1 0.01 10 1 100 Switching Characteristics (Typical) (4) Switching Characteristics (Typical) (3) Swithing Energy Losses E (mJ) Switching Time t (ns) 10000 VCC = 300 V, VGE = 15 V IC = 40 A, Tc = 150°C 1000 td(off) tr td(on) tf 10 10 Eoff Eon 1 0.1 VCC = 300 V, VGE = 15 V IC = 40 A, Tc = 150°C 0.01 1 10 1 100 Swithing Energy Losses E (mJ) 1000 td(off) tr td(on) tf 10 1 25 VCC = 300 V, VGE = 15 V IC = 40 A, Rg = 5 Ω 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 100 10 Gate Registance Rg (Ω) (Inductive load) Gate Resistance Rg (Ω) (Inductive load) Switching Times t (ns) 100 Collector Current IC (A) (Inductive load) Collector Current IC (A) (Inductive load) 100 10 10 Eoff 1 Eon 0.1 0.01 25 VCC = 300 V, VGE = 15 V IC = 40 A, Rg = 5 Ω 50 75 100 125 150 Junction Temperature Tj (°C) (Inductive load) Page 5 of 9 RJH60M6DPQ-E0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage Capacitance C (pF) VGE = 0 V, f = 1 MHz Tc = 25°C Cies 1000 100 Coes Cres 10 0 50 100 150 200 250 16 800 VGE 600 12 400 8 200 VCE 0 300 0 40 Reverse Recovery Time trr (ns) 200 160 Tc = 150°C 120 25°C 40 VCC = 300 V IF = 40 A 0 40 80 120 160 0 200 1.0 VCC = 300 V IF = 40 A 0.8 0.6 Tc = 150°C 0.4 0.2 25°C 0 0 200 40 80 120 160 200 Diode Current Slope diF/dt (A/µs) Diode Current Slope diF/dt (A/µs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 200 VCC = 300 V IF = 40 A Forward Current IF (A) Reverse Recovery Current Irr (A) 160 120 Reverse Recovery Charge vs. Diode Current Slope (Typical) Reverse Recovery Charge Qrr (µC) Reverse Recovery Time vs. Diode Current Slope (Typical) 0 80 Gate Charge Qg (nC) Collector to Emitter Voltage VCE (V) 80 4 VCC = 300 V IC = 40 A Tc = 25°C Gate to Emitter Voltage VGE (V) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 12 Tc = 150°C 8 4 25°C 0 VCE = 0 V Pulse Test 160 Tc = 25°C 120 150°C 80 40 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/µs) R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 0 0.5 1.0 1.5 2.0 2.5 3.0 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Preliminary Normalized Transient Thermal Impedance γs (t) RJH60M6DPQ-E0 Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 0.2 θj – c(t) = γs (t) • θj – c θj – c = 0.42°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 0.01 1 shot pulse PDM D= PW T PW T 0.01 100 μ 1m 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 1.07°C/W, Tc = 25°C 0.2 0.1 .05 0.1 0 PDM D= 0.02 0.01 1 shot pulse 0.01 100 μ R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 1m PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Page 7 of 9 RJH60M6DPQ-E0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) tf td(on) tr Waveform Diode Reverse Recovery Time Test Circuit VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 0.5 Irr 0.9 Irr Page 8 of 9 RJH60M6DPQ-E0 Preliminary Package Dimension JEITA Package Code ⎯ RENESAS Code PRSS0003ZE-A Previous Code ⎯ MASS[Typ.] 6.0g Unit: mm φ3.60 ± 0.1 5.02 ± 0.19 15.94 ± 0.19 17.63 4.5 max 20.19 ± 0.38 21.13 ± 0.33 6.15 Package Name TO-247 5.45 0.1 2.10 +– 0.2 13.26 1.27 ± 0.13 5.45 0.71 ± 0.1 2.41 Ordering Information Orderable Part Number RJH60M6DPQ-E0#T2 R07DS1088EJ0100 Rev.1.00 Jun 27, 2013 Quantity 450 pcs Shipping Container Tube Page 9 of 9 Notice 1. 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