HAT2131R Silicon N Channel Power MOS FET Power Switching REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Features • • • • Low on-resistance Low drive current High density mounting Capable of 4 V gate drive Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) 5 6 7 8 D D D D 65 87 4 G 3 12 1, 2, 3 4 5, 6, 7, 8 4 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 Pch Note2 Tch Tstg Ratings 350 ±20 0.9 7.2 0.9 7.2 2.5 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 1 of 6 Unit V V A A A A W °C °C HAT2131R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min 350 — — 1.0 1.2 — — — — — — — — — — — — Typ — — — — 2.0 2.5 2.6 460 32 8 15 13 76 50 20 1 6 Max — 0.1 ±0.1 2.5 — 3.0 3.2 — — — — — — — — — — Unit V µA µA V S Ω Ω pF pF pF ns ns ns ns nC nC nC VDF trr — — 0.8 220 1.2 — V ns Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 2 of 6 Test conditions ID = 10 mA, VGS = 0 VDS = 350 V, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 0.45 A, VDS = 10 V Note3 ID = 0.45 A, VGS = 10 V Note3 ID = 0.45 A, VGS = 4 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 0.45 A VGS = 10 V RL = 556 Ω Rg = 10 Ω VDD = 250 V VGS = 10 V ID = 0.9 A IF = 0.9 A, VGS = 0 Note3 IF = 0.9 A, VGS = 0 diF/dt = 100 A/µs HAT2131R Main Characteristics Maximum Safe Operation Area Typical Output Characteristics 5 10 µs 10 ID (A) ID (A) 100 PW = 100 µs 0.1 Operation in this area is limited by RDS(on) 0.01 Ta = 25°C 0.001 1 shot 0.1 1 10 100 0 Drain to Source on State Resistance RDS(on) (Ω) 2 1 25°C Tc = 75°C −25°C 0 2 3 4 Gate to Source Voltage 5 VGS = 10 V Pulse Test 8 ID = 0.9 A 0.45 A 4 0.1 A 2 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 3 of 6 8 12 16 20 VDS (V) 10 Ta = 25°C Pulse Test VGS = 4 V 3 10 V 1 0.1 1 VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical) (1) 6 4 Drain to Source Voltage 10 Drain Current Static Drain to Source on State Resistance RDS(on) (Ω) ID (A) Drain Current 3 0 2.4 V Static Drain to Source on State Resistance vs. Drain Current (Typical) 4 0 −25 1 VDS (V) VDS = 10 V Pulse Test 1 2.6 V 1000 5 0 2 VGS = 2.2 V Typical Transfer Characteristics Static Drain to Source on State Resistance RDS(on) (Ω) 2.8 V 0 Drain to Source Voltage 10 3V 4V 10 V 4 3 Drain Current Drain Current 1 Ta = 25°C Pulse Test ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) (2) 10 VGS = 4 V Pulse Test 8 ID = 0.9 A 6 0.45 A 4 0.1 A 2 0 −25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) HAT2131R Body-Drain Diode Reverse Recovery Time (Typical) Typical Capacitance vs. Drain to Source Voltage 10000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 100 VGS = 0 f = 1 MHz Ta = 25°C 1000 Ciss 100 Coss 10 Crss di / dt = 100 A / µs VGS = 0, Ta = 25°C 1 10 1 0 10 Reverse Drain Current IDR (A) VDS = 100 V 250 V 400 VDS 200 4 VDS = 250 V 100 V 0 0 8 16 24 Gate Charge Gate to Source Cutoff Voltage VGS(off) (V) 8 32 0 40 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 2.5 VDS = 10 V 2.0 1.5 ID = 10 mA 1.0 1 mA 0.1 mA 0.5 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 4 of 6 5 Reverse Drain Current IDR (A) 12 VGS (V) VGS 600 120 160 200 VDS (V) Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VDS (V) Drain to Source Voltage 16 ID = 0.9 A Ta = 25°C 80 Drain to Source Voltage Dynamic Input Characteristics (Typical) 800 40 VGS = 0 V Ta = 25 °C Pulse Test 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) HAT2131R Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 1 D=1 0.5 0.2 0.1 0.1 θch – f (t) = γ s (t) • θch – f θch – f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.05 0.01 0.02 0.01 D= PDM 0.001 1s 0.0001 10 µ t ho pu lse PW T PW T 100 µ 1m 10 m 100 m 1 10 100 1000 10000 Pulse Width PW (s) Switching Time Test Circuit 90% Vout Monitor Vin Monitor 10 Ω Switching Time Waveform D.U.T. Vin Vout Vin 10 V 10% RL VDD = 250 V 10% 90% td(on) REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 5 of 6 10% tr 90% td(off) tf HAT2131R Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z *3 Terminal cross section (Ni/Pd/Au plating) bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min D E A2 A1 A bp b1 c c1 1 A L1 L y HE e x y Z L L1 Detail F Ordering Information Part No. HAT2131R-EL-E Quantity 2500 pcs REJ03G1815-0100 Rev.1.00 Jul 17, 2009 Page 6 of 6 Shipping Container Taping Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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