STS2301A

STS2301A
Green
Product
S a mHop Microelectronics C orp.
Ver 1.1
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Typ
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
95 @ VGS=-4.5V
-20V
Suface Mount Package.
-2.6A
130 @ VGS=-2.5V
D
S OT 23-3L
D
G
S
G
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TC=25°C
TC=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TC=25°C
TC=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Units
V
V
A
Limit
-20
±10
-2.6
-2.1
A
9.8
A
1.25
W
0.8
W
-55 to 150
°C
100
°C/W
Dec,31,2010
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STS2301A
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Conditions
Min
VGS=0V , ID=-250uA
-20
Typ
Max
Units
-1
±100
uA
nA
-0.8
95
-1.5
120
V
m ohm
130
160
m ohm
V
VDS=-16V , VGS=0V
VGS= ±10V , VDS=0V
VDS=VGS , ID=-250uA
VGS=-4.5V , ID=-2.6A
VGS=-2.5V , ID=-2.2A
VDS=-5V , ID=-2.6A
-0.5
7
S
330
pF
pF
pF
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VDS=-10V,VGS=0V
f=1.0MHz
75
60
c
VDD=-10V
ID=-1A
VGS=-4.5V
RGEN= 6 ohm
VDS=-10V,ID=-2.6A,VGS=-4.5V
VDS=-10V,ID=-2.6A,
VGS=-4.5V
280
130
4.2
0.4
VSD
Diode Forward Voltage
VGS=0V,IS= -1A
nC
nC
nC
1.5
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Drain-Source Diode Forward Current
IS
b
ns
ns
ns
ns
40
85
-0.86
-1
A
-1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Dec,31,2010
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STS2301A
Ver 1.1
10
5
VGS=-2.5V
4
VGS=-2V
-I D, Drain Current(A)
-ID, Drain Current(A)
VGS=-4.5V
3
2
VGS=-1.5V
1
8
25 C
-55 C
6
Tj=125 C
4
2
0
0
0
1.5
1.0
0.5
2.0
2.5
0
3.0
-V DS, Drain-to-Source Voltage(V)
200
1.4
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
1.5
VG S =-2.5V
120
VG S =-4.5V
40
2
1
3
4
2.4
3.6
3.0
V G S =-2.5V
I D = -2.2A
1.3
1.2
1.1
V G S =-4.5V
I D =-2.6 A
1.0
0
5
0
25
50
75
100
125
150
T j ( °C )
-I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1
1.8
Figure 2. Transfer Characteristics
240
80
1.2
-V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
160
0.6
V DS =V G S
I D =-250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =-250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,31,2010
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STS2301A
Ver 1.1
20.0
300
-Is, Source-drain current(A)
I D =-2.6A
250
RDS(on)(m Ω)
200
150
125 C
100
25 C
75 C
50
0
0
0.5 1.0
2.0 2.5 3.0 3.5 4.0
1.5
10.0
5.0
75 C
125 C
1.0
4.5
0
-V GS, Gate to Source Voltage(V)
600
C, Capacitance(pF)
500
400
Ciss
300
200
Coss
Crss
0
4
2
6
8
10
3
2
1
0
12
0
1
-ID, Drain Current(A)
Switching Time(ns)
3
4
5
6
Figure 10. Gate Charge
Tf
Tr
TD(on)
10
10
R
(
L im
it
10
1m
10
10
DC
0.1
VGS=-4.5V
0.1
60 100
DS
)
ON
1
VDS=-10V,ID=-1A
6 10
2
Qg, Total Gate Charge(nC)
TD(off )
1
2.0
V DS = -10V
I D =-2.6A
4
Figure 9. Capacitance
1
1.6
5
-V DS, Drain-to-Source Voltage(V)
100
60
1.2
Figure 8. Body Diode Forward Voltage
Variation with Source Current
Figure 7. On-Resistance vs.
Gate-Source Voltage
0
0.8
-VSD, Body Diode Forward Voltage(V)
-V GS, Gate-to-Source Voltage(V)
100
0.4
25 C
10
0m
0u
s
s
ms
s
s
V G S =-4.5V
S ingle P ulse
T A =25 C
1
10
30 50
Rg, Gate Resistance(Ω)
-V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Dec,31,2010
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STS2301A
Ver 1.1
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
P DM
0. 1
0.1
t1
t2
0.05
0.02
Single Pulse
0.01
0.01
0.0000 1
1.
2.
3.
4.
0.000 1
0.001
0.01
0. 1
1
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
10
100
1000
Square Wave Pulse Duration(sec)
Figure 13. Normalized Thermal Transient Impedance Curve
Dec,31,2010
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STS2301A
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
SOT23-3L
D
E1
1
2
e
b
DETAIL "A"
A1
e1
L
DETAIL "A"
A
E
3
SYMBOLS
D
E
E1
e
e1
b
C
A
A1
L
L1
L1
MILLIMETERS
INCHES
MIN
MAX
2.700
3.100
2.200
3.000
1.200
1.700
0.850
1.150
1.800
2.100
0.300
0.510
0.080
0.200
0.000
0.150
0.887
1.300
0.450 REF.
0.600 REF.
MIN
MAX
0.106
0.122
0.118
0.087
0.047
0.067
0.033
0.045
0.071
0.083
0.020
0.019
0.008
0.003
0.000
0.006
0.035
0.051
0.018 REF.
0.024 REF.
O
O
10
0
0
O
10
O
DeC,31,2010
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STS2301A
Ver 1.1
SOT23-3L Tape and Reel Data
SOT23-3L Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
A0
B0
K0
D0
SOT23-3L
3.15
²0.10
2.77
²0.10
1.22
²0.10
О1.00
+0.05
D1
О1.50
+0.10
E
E1
E2
P0
P1
P2
T
8.00
+0.30
-0.10
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.22
²0.04
SOT23-3L Reel
UNIT:р
TAPE SIZE
8р
REEL SIZE
M
N
W
W1
H
K
S
G
R
V
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
5.00
18.00
Dec,31,2010
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