STT10L01 Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 140 @ VGS=10V 100V Surface Mount Package. 3A 225 @ VGS=4.5V D G G S STT SERIES SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous TA=25°C 3.0 A TA=70°C 2.4 A IDM EAS -Pulsed a b Single Pulse Avalanche Energy a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d 20 A 16 mJ TA=25°C 3 W TA=70°C 1.9 W -55 to 150 °C 42 °C/W THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Aug,05,2010 1 www.samhop.com.tw STT10L01 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VDS=VGS , ID=250uA RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Typ Max V 1 ±100 uA nA 1.5 3 V VGS=10V , ID=3A 112 140 m ohm VGS=4.5V , ID=2.4A 167 225 m ohm VDS=5V , ID=3A 1 Units 4 S 455 48 32 pF pF pF 10.5 ns 11 20 ns ns 6.8 ns VDS=50V,ID=3A,VGS=10V 8 nC VDS=50V,ID=3A,VGS=4.5V 4.5 nC VDS=50V,ID=3A, VGS=10V 1.2 nC 2.6 nC c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=25V,VGS=0V f=1.0MHz c VDD=50V ID=1A VGS=10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage b VSD VGS=0V,IS=1A 0.78 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) Aug,05,2010 2 www.samhop.com.tw STT10L01 Ver 1.0 6.0 8.0 VGS=4.5V VGS=10V I D, Drain Current(A) ID, Drain Current(A) VGS=4V 4.8 3.6 VGS=3.5V 2.4 VGS=3V 1.2 6.4 4.8 3.2 Tj=125 C 55 C 1.6 25 C 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 3 4 6 5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.5 250 2.2 200 V G S =4.5V 150 100 V G S =10V 50 V G S =10V I D =3A 1.9 1.6 1.3 V G S =4.5V I D =2.4A 1.0 1.2 1 2.4 3.6 4.8 0 6.0 0 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 2 VGS, Gate-to-Source Voltage(V) 300 1 1 V DS, Drain-to-Source Voltage(V) RDS(on), On-Resistance Normalized RDS(on)(m Ω) 0 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,05,2010 3 www.samhop.com.tw STT10L01 Ver 1.0 20.0 420 Is, Source-drain current(A) I D =3A 350 125 C RDS(on)(m Ω) 280 210 140 75 C 25 C 70 0 0 2 4 6 8 0 0.25 0.50 0.75 1.00 1.25 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 500 C, Capacitance(pF) 25 C 75 C V GS, Gate-to-Source Voltage(V) 600 400 300 200 Coss 100 Crss 10 VDS=50V ID=3A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 2 4 6 8 12 14 16 10 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 300 TD(off ) I D, Drain Current(A) 100 Switching Time(ns) 5.0 1.0 10 125 C 10.0 Tr TD(on) 10 Tf 10 R 1 10 im it 1m 10 10 10 DC 0.1 0.01 0.1 100 )L 1 VDS=50V,ID=1A VGS=10V 1 D ON S( 0m s ms s 1s s VGS=10V Single Pulse TA=25 C 1 10 100 Rg, Gate Resistance( Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Aug,05,2010 4 www.samhop.com.tw STT10L01 Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 0.01 t1 t2 Single Pulse 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) 10 100 1000 Figure 14. Normalized Thermal Transient Impedance Curve Aug,05,2010 5 www.samhop.com.tw STT10L01 Ver 1.0 D B SOT-223 C 0.10 M C B C C 0.080 A C1 (C) E b1 E1 0.10 M C B b SECTION B-B DETAIL "A" g 1 3 2 B C1 B e b 0.10 M C B (C) C e1 b3 b2 SECTION C-C GAUGE PLANE A2 SEATING PLANE L 0.25 DETAIL "A" A C A1 COMMON SYMBOL A A1 A2 b b1 b2 b3 g c c1 D E E1 e e1 L DIMENSIONS MILLIMETER MIN. MOM. MIN. 1.80 0.10 0.02 1.60 1.50 1.70 0.84 0.76 0.66 0.60 0.71 0.79 3.10 2.90 3.00 3.05 2.95 2.84 0.06 0.35 0.23 0.30 0.23 0.28 0.33 6.50 6.70 6.30 6.70 7.00 7.30 3.50 3.30 3.70 2.30 BSC 4.60 BSC 0.81 0° 10 ° DIMENSIONS INCHE MIN. MOM. 0.0008 0.0591 0.0260 0.0236 0.1142 0.1118 0.0630 0.0300 0.0280 0.1181 0.1161 0.0090 0.0090 0.2480 0.2638 0.1300 0.0319 0° 0.1181 0.0110 0.2560 0.2760 0.1378 0.0906 BSC 0.1811 BSC MAX. 0.0709 0.0039 0.0669 0.0330 0.0311 0.1220 0.1200 0.0020 0.1378 0.0130 0.2638 0.2874 0.1457 10 ° Aug,05,2010 6 www.samhop.com.tw STT10L01 Ver 1.0 SOT-223 Tape and Reel Data SOT-223 Carrier Tape D1 P0 P2 P1 E1 E2 E D0 T K0 B0 A0 unit:р PACKAGE A0 B0 K0 7.42 ²0.1 6.83 ²0.1 1.88 ²0.1 D0 1.50 + 0.25 D1 1.60 + 0.1 E 12.0 + 0.3 - 0.1 E1 E2 P0 P1 P2 T 1.75 ²0.1 5.50 ²0.5 8.0 ²0.1 4.00 ²0.1 2.00 ²0.05 0.292 ²0.02 SOT-223 Reel UNIT:р REEL SIZE ӿ330 ² 0.5 M N ӿ97.0 ² 1.0 W 2.2 W1 H K S 13.0 + 1.5 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Aug,05,2010 7 www.samhop.com.tw