STM4886 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 5 @ VGS=10V 30V Suface Mount Package. 17A 8 @ VGS=4.5V S O-8 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a TA=25°C b -Pulsed Sigle Pulse Avalanche Energy d a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Limit 30 ±20 Units V V 17 A 68 A 181 mJ 2.5 W -55 to 150 °C 50 °C/W Mar,24,2008 1 www.samhop.com.tw STM4886 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Conditions Min VGS=0V , ID=250uA 30 Typ Max Units V uA 1 ±100 nA 1.7 3.8 3 5 V m ohm VGS=4.5V , ID=13.5A 5.8 8 m ohm VDS=15V , ID=17A 20 S VDS=15V,VGS=0V f=1.0MHz 2500 640 440 pF pF pF 52 85 ns ns ns ns VDS=24V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=17A VDD=15V ID=17A VGS=10V RGEN=6 ohm 1 82 65 VDS=15V,ID=17A,VGS=10V 58 nC VDS=15V,ID=17A,VGS=4.5V 28 5.4 17 nC Qgs Qgd Gate-Source Charge VDS=15V,ID=17A, VGS=10V Gate-Drain Charge c DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage VSD VGS=0V,IS=17A 0.73 nC nC 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1.25mH,RG=25Ω,IAS=17A,VDD = 30V.(See Figure13) Mar,24,2008 2 www.samhop.com.tw STM4886 Ver 1.0 20 25 V G S = 4.5V I D, Drain Current(A) I D, Drain Current(A) V G S = 10V 20 V G S =3 V 15 10 5 16 12 125 C 8 25 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 V DS, Drain-to-Source Voltage(V) 0.7 2.8 3.5 4.2 2.0 VG S =4.5V R DS(on), On-Resistance Normalized 6 R DS(on)(m Ω) 2.1 Figure 2. Transfer Characteristics 7 5 4 VG S =10V 3 2 5 1 10 15 20 V G S =10V I D = 17 A 1.8 1.6 1.4 V G S =4.5V I D =13.5A 1.2 1.0 0 25 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 Vth, Normalized Gate-Source Threshold Voltage 1.4 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55 C 4 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Mar,24,2008 3 www.samhop.com.tw STM4886 Ver 1.0 15.0 20.0 Is, Source-drain current(A) I D =17 A R DS(on)(m Ω) 12.5 10.0 125 C 7.5 5.0 75 C 25 C 2.5 0 5.0 25 C 125 125 C 2 4 6 8 10 0 0.24 0.48 0.72 0.96 1.20 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 3000 Ciss 2400 1800 1200 Coss 600 Crss 0 0 5 10 15 20 25 V DS = 15V I D =17 A 8 6 4 2 0 0 30 9 18 36 45 54 63 72 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 60 I D, Drain Current(A) RD 1000 600 Tr TD(off) Tf 100 TD(on) V DS =15V ,ID=17A 10 1 27 V DS, Drain-to-Source Voltage(V) 6000 Switching Time(ns) 75 C 1.0 0 3600 C, Capacitance(pF) 10.0 6 10 Rg, Gate Resistance(Ω) im it 10 1m 10 10 1s 0m 0u s s ms s DC 1 0.1 60 100 300 600 )L 10 0.1 V G S =10V ON S( V G S =10V S ingle P ulse T A =25 C 1 10 30 50 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Mar,24,2008 4 www.samhop.com.tw STM4886 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 t1 Single Pulse t2 1. 2. 3. 4. 0.001 0.0000 1 0.000 1 0.001 0.01 0. 1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Mar,24,2008 5 www.samhop.com.tw STM4886 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Mar,24,2008 6 www.samhop.com.tw STM4886 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 E1 E2 12.0 ²0.3 1.75 5.5 ²0.05 W W1 H K 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 D0 D1 E 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 REEL SIZE M N ӿ330 330 ² 1 62 ²1.5 6.40 B0 5.20 K0 P1 P2 T 8.0 4.0 2.0 ²0.05 0.3 ²0.05 S G R V P0 SO-8 Reel UNIT:р TAPE SIZE 12 р 2.0 ²0.15 Mar,24,2008 7 www.samhop.com.tw