STS8816 Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 21 @ VGS=4.5V 20V Suface Mount Package. 6A 30 @ VGS=2.5V ESD Protected. S1 D1/D2 S2 1 2 3 D2 D1 SOT 26 Top View 6 G1 5 4 D1/D2 G1 G2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed a Limit 20 ±12 Units V V TA=25°C 6 A TA=70°C 4.8 A 24 A 1.25 W 0.8 W -55 to 150 °C 100 °C/W b a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Nov,25,2008 1 www.samhop.com.tw STS8816 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS VGS=0V , ID=250uA Forward Transconductance Typ Max 20 1 ±10 VDS=16V , VGS=0V VGS= ±12V , VDS=0V Units V uA uA 0.85 1.5 17.5 21 V m ohm VGS=4V , ID=5.9A 18 22 m ohm VGS=3V , ID=5.5A 21 26 m ohm VGS=2.5V , ID=5A 24 30 m ohm VDS=5V , ID=6A 12 S VDS=10V,VGS=0V f=1.0MHz 770 175 160 pF pF pF 20 ns 50 ns 64 ns 40 ns 11.5 nC 2 nC 4.3 nC VDS=VGS , ID=250uA VGS=4.5V , ID=6A Drain-Source On-State Resistance Min 0.5 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=10V ID=1A VGS=4.5V RGEN=10 ohm VDS=10V,ID=6A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=1.3A 0.78 1.3 1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Nov,25,2008 2 www.samhop.com.tw STS8816 Ver 1.0 25 15 VGS=2.5V 20 I D, Drain Current(A) I D, Drain Current(A) VGS=4.5V VGS=2V 15 10 VGS=1.5V 5 1.5 1 0.5 2.5 2 25 C Tj=125 C 0.5 3 1.0 1.5 2.0 2.5 3.0 V DS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 60 1.8 R DS(on), On-Resistance Normalized 50 R DS(on)(m Ω) -55 C 6 0 0 40 VG S =2.5V 30 20 VG S =4.5V 10 1.6 V G S =4.5V ID= 6 A 1.4 V G S =2.5V I D =5 A 1.2 1.0 0.8 1 6 12 18 24 30 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 9 3 0 0 12 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,25,2008 3 www.samhop.com.tw STS8816 Ver 1.0 60 20.0 Is, Source-drain current(A) I D =6 A 50 RDS(on)(m Ω) 40 30 125 C 20 25 C 75 C 10 0 0 0.5 1 1.5 2.5 2 3 3.5 75 C 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) 125 C 0 1200 Ciss 800 600 Coss 400 Crss 200 5 V DS = 10V I D =6A 4 3 2 1 0 0 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 16 80 100 I D, Drain Current(A) 1000 Switching Time(ns) 5.0 1.0 4.5 4 25 C 10.0 Tr TD(off) Tf TD(on) 10 1m 10 0u s s 1 0 ms 0m s 1 DC VGS=4.5V Single Pulse TA=25 C 0.1 VDS=10V,ID=1A VGS=4.5V 1 10 10 0.03 1 10 100 0.1 1 10 20 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Nov,25,2008 4 www.samhop.com.tw STS8816 Ver 1.0 VDD t on VIN D tf 90% 90% VOUT VOUT VGS RGEN t off td(off) tr td(on) RL 10% INVERTED 10% G 90% A S V IN 50% 50% 10% PULSE WIDTH Figure 14. Switching Waveforms Figure 13. Switching Test Circuit Normalized Transient Thermal Resistance 10 1 0.5 0.2 P DM 0.1 0.1 t1 t2 0.05 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Nov,25,2008 5 www.samhop.com.tw STS8816 Ver 1.0 PACKAGE OUTLINE DIMENSIONS DETAIL A SOT 26 D b 5 4 E1 6 2 1 3 e e1 c R1 L2 A2 GAUGE PLANE SEATING PLANE A1 A R L L1 DETAIL A Nov,25,2008 6 www.samhop.com.tw STS8816 Ver 1.0 SOT 26 Tape and Reel Data SOT 26 Carrier Tape +0.10 О1.50 0.00 3.50 + 0.05 4.00 + 0.10 1.75 + 0.10 2.00 + 0.05 8.0 + 0.30 A B B A 5 M ax 0.25 + 0.05 +0.10 О1.00 0.00 4.00 + 0.10 3.3 + 0.1 .3 R0 5 M R0 .3 ax Bo 3.2 + 0.1 R0 .3 R0 .3 SECTION B-B Ko 1.5 + 0.1 SECTION A-A SOT 26 Reel О60 + 0.5 О178.0 + 0.5 1.50 10.6 2.2 + 0.5 +1.5 9.0 -0 О13.5 + 0.5 SCALE 2:1 SOT 26 Nov,25,2008 7 www.samhop.com.tw