r Pr STU601S S a mHop Microelectronics C orp. Ver 2.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 95 @ VGS=-10V -60V Suface Mount Package. -15A 125 @ VGS=-4.5V ESD Protected. G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current-Continuous a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range ±20 V -15 V A TC=70°C -12 A -45 A 36 mJ d PD Units TC=25°C b -Pulsed Sigle Pulse Avalanche Energy Limit -60 TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 50 °C/W THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. °C/W Nov,16,2011 1 www.samhop.com.tw STU601S Ver 2.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -60 Typ Max Units V uA 1 ±10 uA -2.3 -3 V 78 95 VGS=-4.5V , ID=-6.5A 93 125 m ohm m ohm VDS=-10V , ID=-7.5A 17 S VDS=-25V,VGS=0V f=1.0MHz 1107 76 56 pF pF pF VDD=-30V ID=-1.0A VGS=-10V RGEN= 6 ohm 21.4 19 92.2 13.3 ns ns ns ns VDS=-30V,ID=-7.5A,VGS=-10V 23 nC VDS=-30V,ID=-7.5A,VGS=-4.5V 10.6 nC VDS=-30V,ID=-7.5A, VGS=-10V 2.9 5.9 nC nC VDS=-48V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-7.5A -1 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge c Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage VGS=0V,IS= -2A -0.82 -1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V .(See Figure13) Nov,16,2011 2 www.samhop.com.tw STU601S Ver 2.0 25 20 V G S =-4.5V 20 V G S =-5V -I D, Drain Current(A) -ID, Drain Current(A) V G S =-10V V G S =-4V 15 V G S =-3.5V 10 5 V G S =-3V 16 T j=125 C 12 8 4 25 C 0 0 0 1.0 0.5 2.0 1.5 2.5 3.0 0 -V DS, Drain-to-Source Voltage(V) 2.7 3.6 4.5 5.4 Figure 2. Transfer Characteristics 2.0 140 120 R DS(on), On-Resistance Normalized 1.8 V G S =4.5V 100 RDS(on)(m Ω) 1.8 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 80 V G S =10V 60 40 20 V G S =-10V I D =-7.5A 1.6 1.4 1.2 V G S =-4.5V I D =-6.5A 1.0 0 1 1 10 5 15 20 0 25 25 50 75 100 125 150 T j( C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 0.9 -55 C V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Nov,16,2011 3 www.samhop.com.tw STU601S Ver 2.0 20.0 240 -Is, Source-drain current(A) I D = -7.5A RDS(on)(m Ω) 200 160 125 C 120 75 C 80 25 C 40 0 0 2 4 6 8 125 C 10.0 5.0 75 C 1.0 10 0 -V GS, Gate-to-Source Voltage(V) 0.75 1.00 1.25 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 1800 1500 1200 C is s 900 600 300 Cos s C rs s 0 0 5 10 15 20 25 V DS = -30V I D = -7.5A 8 6 4 2 0 30 0 -V DS, Drain-to-Source Voltage(V) 3 6 12 15 9 21 18 24 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 300 100 TD(off ) Tr 10 VDS= -30V,ID=-1A VGS=-10V R D L im 10 it 1m 0u s s ms DC TD(on) 10 S( ) ON 10 -ID, Drain Current(A) Tf 100 Switching Time(ns) 0.50 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage C, Capacitance(pF) 0.25 25 C 1 VGS= -10V Single Pulse TC=25 C 1 1 10 100 0.1 Rg, Gate Resistance(Ω) 1 10 60 -V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Nov,16,2011 4 www.samhop.com.tw STU601S Ver 2.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R ӰJ A (t)=r (t) * R ӰJ A R ӰJ A =S ee Datas heet T J M-T A = P DM* R ӰJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Nov,16,2011 5 www.samhop.com.tw STU601S Ver 2.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Nov,16,2011 6 www.samhop.com.tw STU601S Ver 2.0 TO-252 Tape and Reel Data TO-252 Carrier Tape D1 B0 E E2 T E1 P1 P2 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE M ӿ 330 ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Nov,16,2011 7 www.samhop.com.tw