STT100 Green Product S a mHop Microelectronics C orp. Ver 3.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 819 @ VGS=10V 100V Suface Mount Package. 1.2A 956 @ VGS=4.5V ESD Protected. D G G S STT SERIES SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM EAS -Pulsed TA=25°C Limit 100 ±20 1.2 Units V V A TA=70°C 1.0 A 8 A 2.25 mJ a Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range c TA=25°C TA=70°C 3 W 1.9 W -55 to 150 °C 42 °C/W THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Oct,18,2012 1 www.samhop.com.tw STT100 Ver 3.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Conditions Min VGS=0V , ID=250uA 100 IDSS Zero Gate Voltage Drain Current VDS=80V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VDS=VGS , ID=250uA 1 Typ Max Units V 1 uA ±10 uA 2 3 V 655 819 m ohm 708 956 m ohm RDS(ON) Drain-Source On-State Resistance VGS=10V , ID=0.6A VGS=4.5V , ID=0.56A gFS Forward Transconductance VDS=10V , ID=0.6A 1.9 S VDS=25V,VGS=0V f=1.0MHz 155 20 12 pF pF pF 17 13 ns ns 185 ns 26 ns b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b VDD=50V ID=0.6A VGS=10V RGEN= 6 ohm VDS=50V,ID=0.6A,VGS=10V 3.2 nC VDS=50V,ID=0.6A,VGS=4.5V 2 nC 0.7 nC 1 nC VDS=50V,ID=0.6A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=0.4A VSD Diode Forward Voltage 0.81 1.3 V Notes _ 2%. _ 300us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13) Oct,18,2012 2 www.samhop.com.tw STT100 Ver 3.0 2.5 2.5 VGS = 4.5V 2.0 ID, Drain Current(A) ID, Drain Current(A) VGS = 10V VGS = 4V 1.5 VGS = 3.5V 1.0 0.5 2.0 1.5 Tj=125 C 1.0 25 C -55 C 0.5 VGS = 3V 0 0 2.0 1.0 0 3.0 0 1800 2.0 1500 1.8 1200 600 VGS = 10V 0 0.1 4.8 VGS=10V ID=0.6A 1.6 1.4 VGS=4.5V ID=0.56A 1.2 0.6 1.8 1.2 2.4 0.8 3.0 0 1.2 1.1 1.0 0.9 0.8 0.7 -25 0 25 50 100 125 150 Tj, Junction Temperature ( C) BVDSS, Normalized Drain-Source Breakdown Voltage VDS = VGS ID = 250uA 75 Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 50 25 Tj( C) ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 4.0 1.0 300 0.6 -50 3.2 Figure 2. Transfer Characteristics RDS(ON), On-Resistance Normalized R DS(on)(m Ω) Figure 1. Output Characteristics VGS = 4.5V 2.4 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 900 1.6 0.8 75 100 125 150 Tj, Junction Temperature ( C) 1.3 ID = 250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Oct,18,2012 3 www.samhop.com.tw STT100 Ver 3.0 1800 10.0 ID = 0.6A Is, Source-drain current (A) 1500 RDS(on)(m Ω) 125 C 1200 75 C 900 25 C 600 300 0 125 C 75 C 25 C 1.0 4 2 0 8 6 10 0 0.4 0.8 1.2 1.6 2.0 V GS, Gate-Sorce Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 175 VGS, Gate to Source Voltage (V) 200 C, Capacitance (pF) 5.0 Ciss 150 125 100 75 50 Coss 25 VDS = 50V ID = 0.6A 8 6 4 2 Crss 0 0 0 5 10 20 15 25 30 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VDS, Drain-to Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 3.2 500 10 TD(off ) ID, Drain Current (A) Tf TD(on) Tr 10 V DS =50V,I D =0.6A V GS =10V 1 1 10 RD 1 Rg, Gate Resistance(Ω) ( Lim it 10 10 10 1s 0m 1m s ms s s 0.1 VGS = 10V Single Pulse TA = 25 C 0.01 0.1 100 S ) ON DC Switching Time(ns) 100 1 10 100 VDS, Drain-Source Voltage (V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Oct,18,2012 4 www.samhop.com.tw STT100 Ver 3.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 P DM 0.02 0.01 0.01 t1 t2 Single Pulse 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) 10 100 1000 Figure 14. Normalized Thermal Transient Impedance Curve Oct,18,2012 5 www.samhop.com.tw STT100 Ver 3.0 D B SOT-223 C 0.10 M C B C C 0.080 A C1 (C) E b1 E1 0.10 M C B b SECTION B-B DETAIL "A" g 1 3 2 B (C) C1 B e b 0.10 M C B C e1 b3 b2 SECTION C-C GAUGE PLANE A2 SEATING PLANE L 0.25 DETAIL "A" A C A1 COMMON SYMBOL A A1 A2 b b1 b2 b3 g c c1 D E E1 e e1 L DIMENSIONS MILLIMETER MIN. MOM. MAX. 1.80 0.02 0.10 1.60 1.50 1.70 0.84 0.76 0.66 0.60 0.71 0.79 3.10 2.90 3.00 3.05 2.95 2.84 0.06 0.35 0.23 0.30 0.23 0.28 0.33 6.50 6.70 6.30 6.70 7.30 7.00 3.50 3.30 3.70 2.30 BSC 4.60 BSC 0.81 10 ° 0° DIMENSIONS INCHE MIN. MOM. 0.0008 0.0591 0.0260 0.0236 0.1142 0.1118 0.0630 0.0300 0.0280 0.1181 0.1161 0.0090 0.0090 0.2480 0.2638 0.1300 0.0319 0° 0.1181 0.0110 0.2560 0.2760 0.1378 0.0906 BSC 0.1811 BSC MAX. 0.0709 0.0039 0.0669 0.0330 0.0311 0.1220 0.1200 0.0020 0.1378 0.0130 0.2638 0.2874 0.1457 10 ° Oct,18,2012 6 www.samhop.com.tw STT100 Ver 3.0 SOT-223 Tape and Reel Data SOT-223 Carrier Tape D1 P0 P2 P1 E1 E2 E D0 T K0 B0 A0 unit:р PACKAGE A0 B0 K0 7.42 ²0.1 6.83 ²0.1 1.88 ²0.1 D0 1.50 + 0.25 D1 1.60 + 0.1 E 12.0 + 0.3 - 0.1 E1 E2 P0 P1 P2 T 1.75 ²0.1 5.50 ²0.5 8.0 ²0.1 4.00 ²0.1 2.00 ²0.05 0.292 ²0.02 SOT-223 Reel UNIT:р REEL SIZE ӿ330 ² 0.5 M N ӿ97.0 ² 1.0 W 2.2 W1 H K S 13.0 + 1.5 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Oct,18,2012 7 www.samhop.com.tw