Green Product STU/D606S S a mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 56 @ VGS=10V 60V Suface Mount Package. 21A 68 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter Limit Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 21 A 16.8 A IDM EAS -Pulsed TC=25°C TC=70°C a b Sigle Pulse Avalanche Energy d 61 A 25 mJ TC=25°C 50 W TC=70°C 32 W -55 to 150 °C Thermal Resistance, Junction-to-Case 2.5 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Dec,03,2012 1 www.samhop.com.tw STU/D606S Ver 1.2 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 60 Typ 1 ±100 VDS=48V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=10.5A Max 1.0 1.8 3.0 Units V uA nA 45 56 V m ohm VGS=4.5V , ID=9.5A 50 68 m ohm VDS=20V , ID=10.5A 16 S 825 72 48 pF pF pF 13 ns 12.5 ns 38 ns 6 ns VDS=30V,ID=10.5A,VGS=10V 13.5 nC VDS=30V,ID=10.5A,VGS=4.5V 6.3 nC VDS=30V,ID=10.5A, VGS=10V 1.6 nC 3.4 nC c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=30V,VGS=0V f=1.0MHz c VDD=30V ID=1A VGS=10V RGEN=3.3 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1.7A 0.79 1.3 V Notes a.Drain current limited by maximum junction temperature. _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Dec,03,2012 2 www.samhop.com.tw STU/D606S Ver 1.2 30 20 ID, Drain Current(A) VGS=10V 24 VGS=3.5V 18 12 VGS=3V 6 0 R DS(on)(m Ω) VGS=4V 0 0.5 1 2 1.5 2.5 25 C 12 8 4 3 T j=125 C -55 C 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 120 2.0 100 1.8 80 60 VGS=4.5V 40 VGS=10V 20 1 6 18 12 24 V G S =4.5V I D =9.5A 1.6 1.4 V G S =10V I D =10.5A 1.2 1.0 0.0 1 30 0 25 50 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.3 Vth, Normalized Gate-Source Threshold Voltage 16 0 R DS(on), On-Resistance Normalized ID, Drain Current(A) VGS=5V V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Dec,03,2012 3 www.samhop.com.tw STU/D606S Ver 1.2 144 20.0 Is, Source-drain current(A) I D =10.5A 120 125 C RDS(on)(m Ω) 96 72 48 75 C 25 C 24 0 0 2 4 6 8 75 C 0.2 0.4 0.6 0.8 1.0 1.2 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1200 1000 C, Capacitance(pF) 25 C 1.0 10 125 C 10.0 C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 V DS =30V I D =10.5A 8 6 4 2 0 30 0 2 4 8 6 10 12 14 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 16 200 220 100 60 T D(off) I D, Drain Current(A) Switching Time(ns) 100 Tr T D(on) Tf 10 1 V DS =30V ,ID=1A 1 10 V G S =10V 1 6 10 0.1 60 100 300 600 R D S( ) ON V G S =10V S ingle P ulse T A =25 C 1 L im it 10 1m 10 m DC s 10 0u s s 60 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Dec,03,2012 4 www.samhop.com.tw STU/D606S Ver 1.2 V ( BR )D S S tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit F igure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Dec,03,2012 5 www.samhop.com.tw STU/D606S Ver 1.2 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Dec,03,2012 6 www.samhop.com.tw STU/D606S Ver 1.2 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Dec,03,2012 7 www.samhop.com.tw STU/D606S Ver 1.2 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Dec,03,2012 8 www.samhop.com.tw