STU/D606S

Green
Product
STU/D606S
S a mHop Microelectronics C orp.
Ver 1.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m Ω) Max
ID
Rugged and reliable.
56 @ VGS=10V
60V
Suface Mount Package.
21A
68 @ VGS=4.5V
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
Limit
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
21
A
16.8
A
IDM
EAS
-Pulsed
TC=25°C
TC=70°C
a
b
Sigle Pulse Avalanche Energy
d
61
A
25
mJ
TC=25°C
50
W
TC=70°C
32
W
-55 to 150
°C
Thermal Resistance, Junction-to-Case
2.5
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
Dec,03,2012
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STU/D606S
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
60
Typ
1
±100
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=10.5A
Max
1.0
1.8
3.0
Units
V
uA
nA
45
56
V
m ohm
VGS=4.5V , ID=9.5A
50
68
m ohm
VDS=20V , ID=10.5A
16
S
825
72
48
pF
pF
pF
13
ns
12.5
ns
38
ns
6
ns
VDS=30V,ID=10.5A,VGS=10V
13.5
nC
VDS=30V,ID=10.5A,VGS=4.5V
6.3
nC
VDS=30V,ID=10.5A,
VGS=10V
1.6
nC
3.4
nC
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=30V,VGS=0V
f=1.0MHz
c
VDD=30V
ID=1A
VGS=10V
RGEN=3.3 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1.7A
0.79
1.3
V
Notes
a.Drain current limited by maximum junction temperature.
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Dec,03,2012
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STU/D606S
Ver 1.2
30
20
ID, Drain Current(A)
VGS=10V
24
VGS=3.5V
18
12
VGS=3V
6
0
R DS(on)(m Ω)
VGS=4V
0
0.5
1
2
1.5
2.5
25 C
12
8
4
3
T j=125 C
-55 C
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
2.0
100
1.8
80
60
VGS=4.5V
40
VGS=10V
20
1
6
18
12
24
V G S =4.5V
I D =9.5A
1.6
1.4
V G S =10V
I D =10.5A
1.2
1.0
0.0
1
30
0
25
50
75
100
125
150
T j ( °C )
I D, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.3
Vth, Normalized
Gate-Source Threshold Voltage
16
0
R DS(on), On-Resistance
Normalized
ID, Drain Current(A)
VGS=5V
V DS =V G S
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature( ° C )
1.3
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,03,2012
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STU/D606S
Ver 1.2
144
20.0
Is, Source-drain current(A)
I D =10.5A
120
125 C
RDS(on)(m Ω)
96
72
48
75 C
25 C
24
0
0
2
4
6
8
75 C
0.2
0.4
0.6
0.8
1.0
1.2
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
1200
1000
C, Capacitance(pF)
25 C
1.0
10
125 C
10.0
C is s
800
600
400
C os s
200
C rs s
0
0
5
10
15
20
25
V DS =30V
I D =10.5A
8
6
4
2
0
30
0
2
4
8
6
10
12
14
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
16
200
220
100
60
T D(off)
I D, Drain Current(A)
Switching Time(ns)
100
Tr
T D(on)
Tf
10
1
V DS =30V ,ID=1A
1
10
V G S =10V
1
6 10
0.1
60 100 300 600
R
D
S(
)
ON
V G S =10V
S ingle P ulse
T A =25 C
1
L im
it
10
1m
10
m
DC s
10
0u
s
s
60
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Dec,03,2012
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STU/D606S
Ver 1.2
V ( BR )D S S
tp
L
VDS
D.U.T
RG
+
- VDD
IAS
20V
tp
0.01
IAS
Unclamped Inductive Waveforms
Uncamped Inductive Test Circuit
F igure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Dec,03,2012
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STU/D606S
Ver 1.2
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Dec,03,2012
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STU/D606S
Ver 1.2
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Dec,03,2012
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STU/D606S
Ver 1.2
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Dec,03,2012
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