STS3414 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 4A R DS(ON) (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). 50 @ VGS=10V Rugged and reliable. 60 @ VGS=4.5V SOT-23 package. 75 @ VGS=2.5V D S OT-23 D G S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a TA=25°C b a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TA=25°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Limit 30 ±12 Units V V 4 A 15 A 1.25 W -55 to 150 °C 100 °C/W Jan,16,2009 1 www.samhop.com.tw STS3414 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Conditions Min VGS=0V , ID=250uA 30 Forward Transconductance Max Units V uA 1 ±100 nA 0.9 1.2 V VGS=10V , ID=4A 37 50 m ohm VGS=4.5V , ID=3A 45 60 m ohm VGS=2.5V , ID=1A 50 75 m ohm VDS=5.0V , ID=4A 13 S VDS=15V,VGS=0V f=1.0MHz 440 62 37 pF pF pF VDS=24V , VGS=0V VGS= ±12V , VDS=0V VDS=VGS , ID=250uA Drain-Source On-State Resistance Typ 0.5 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=5V ID=1A VGS=10V RGEN=6 ohm 4 ns 8 43 ns ns 5 ns VDS=15V,ID=4A,VGS=10V 9.3 nC VDS=15V,ID=4A,VGS=4.5V 4.6 nC 1 nC 1.4 nC VDS=15V,ID=4A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=1.25A 0.82 1.25 1.2 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Jan,16,2009 2 www.samhop.com.tw STS3414 Ver 1.1 30 15 V G S =3.5V V G S =3V -55 C I D, Drain Current(A) I D, Drain Current(A) 24 V G S =10V 18 V G S =2.5V 12 V G S =2V 12 9 6 T j=125 C 6 3 0 0 0.0 25 C 0.5 1 1.5 2.5 2 3 1.5 2.0 2.5 3.0 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.75 100 1.60 80 60 V G S =4.5V 40 V G S =10V 20 1 6 12 18 24 1.45 V G S =4.5V I D =3A 1.30 1.15 V G S =10V I D =4A 1.00 0.00 30 0 50 25 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.0 V GS, Gate-to-Source Voltage(V) 120 1 0.5 V DS, Drain-to-Source Voltage(V) R DS(on), On-Resistance Normalized R DS(on)(m Ω) 0 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 1.20 I D =250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 100 125 150 Tj, Junction Temperature(° C ) -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jan,16,2009 3 www.samhop.com.tw STS3414 Ver 1.1 20 120 Is, Source-drain current(A) I D =4A 100 RDS(on)(m Ω) 80 125 C 60 40 25 C 75 C 20 0 0 2 4 6 8 75 C 125 C 0.6 0.9 1.2 1.5 1.8 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) C is s C, Capacitance(pF) 25 C 1 0.3 10 500 400 300 200 100 C os s C rs s 5 10 15 20 25 10 V DS =15V I D =4A 8 6 4 2 0 0 0 10 30 0 2 4 6 8 10 12 14 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 16 50 I D, Drain Current(A) Switching Time(ns) 100 TD(off ) 10 Tr Tf TD(on) 10 RD 10 0.1 0.1 100 im it 10 1m 10 s 1 0 ms 0m s 0u s DC V G S = 10V 6 )L 1 V DS =5V ,ID=1A 1 ON S( V G S =10V S ingle P ulse T A =25 C 1 10 30 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jan,16,2009 4 www.samhop.com.tw STS3414 Ver 1.1 V DD ton RL V IN tf 90% 90% D V OUT V OUT VG S R GE N toff td(off) tr td(on) 10% INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH Figure 14. Switching Waveforms Figure 13. Switching Test Circuit Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Jan,16,2009 5 www.samhop.com.tw STS3414 Ver 1.1 PACKAGE OUTLINE DIMENSIONS SOT 23 A M F G L J B C I H E D (TYP.) 3/81 4/21 3/51 3/91 1/217 1/1:5 1/221 2/51 2/71 1/166 1/174 1/46 1/61 1/125 1/131 1 1/21 1 1/115 1/56 1/66 1/133 1/129 1/186!SFG/ I 2/11 1/21 2/41 1/31 1/14: 1/115 J L 1/51 . 1/127 1/56 2/26 1/144 1/156 M 1± 21± 1± 21± F 2/:1!SFG/ G 1/233 1/162 1/119 . Jan,16,2009 6 www.samhop.com.tw STS3414 Ver 1.1 SOT-23 Tape and Reel Data SOT-23 Carrier Tape TR FEED DIRECTION UNIT:р PACKAGE SOT-23 A0 3.20 ²0.10 B0 K0 3.00 ²0.10 1.33 ²0.10 D0 О1.00 +0.25 D1 О1.50 +0.10 E E1 E2 P0 P1 P2 T 8.00 +0.30 -0.10 1.75 ²0.10 3.50 ²0.05 4.00 ²0.10 4.00 ²0.10 2.00 ²0.05 0.20 ²0.02 SOT-23 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 8р REEL SIZE M N W W1 H K S G О178 О178 ²1 О60 ²1 9.00 ²0.5 12.00 ²0.5 О13.5 !!²0.5 10.5 2.00 ²0.5 О10.0 R V 5.00 18.00 Jan,16,2009 7 www.samhop.com.tw