SAMHOP STS3414

STS3414
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
4A
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
50 @ VGS=10V
Rugged and reliable.
60 @ VGS=4.5V
SOT-23 package.
75 @ VGS=2.5V
D
S OT-23
D
G
S
G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
a
TA=25°C
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Limit
30
±12
Units
V
V
4
A
15
A
1.25
W
-55 to 150
°C
100
°C/W
Jan,16,2009
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STS3414
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Conditions
Min
VGS=0V , ID=250uA
30
Forward Transconductance
Max
Units
V
uA
1
±100
nA
0.9
1.2
V
VGS=10V , ID=4A
37
50
m ohm
VGS=4.5V , ID=3A
45
60
m ohm
VGS=2.5V , ID=1A
50
75
m ohm
VDS=5.0V , ID=4A
13
S
VDS=15V,VGS=0V
f=1.0MHz
440
62
37
pF
pF
pF
VDS=24V , VGS=0V
VGS= ±12V , VDS=0V
VDS=VGS , ID=250uA
Drain-Source On-State Resistance
Typ
0.5
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=5V
ID=1A
VGS=10V
RGEN=6 ohm
4
ns
8
43
ns
ns
5
ns
VDS=15V,ID=4A,VGS=10V
9.3
nC
VDS=15V,ID=4A,VGS=4.5V
4.6
nC
1
nC
1.4
nC
VDS=15V,ID=4A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
b
VGS=0V,IS=1.25A
0.82
1.25
1.2
A
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Jan,16,2009
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STS3414
Ver 1.1
30
15
V G S =3.5V
V G S =3V
-55 C
I D, Drain Current(A)
I D, Drain Current(A)
24
V G S =10V
18
V G S =2.5V
12
V G S =2V
12
9
6
T j=125 C
6
3
0
0
0.0
25 C
0.5
1
1.5
2.5
2
3
1.5
2.0
2.5
3.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.75
100
1.60
80
60
V G S =4.5V
40
V G S =10V
20
1
6
12
18
24
1.45
V G S =4.5V
I D =3A
1.30
1.15
V G S =10V
I D =4A
1.00
0.00
30
0
50
25
75
100
125
150
T j ( °C )
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.0
V GS, Gate-to-Source Voltage(V)
120
1
0.5
V DS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
R DS(on)(m Ω)
0
V DS =V G S
I D =250uA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50
100 125 150
Tj, Junction Temperature(° C )
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,16,2009
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STS3414
Ver 1.1
20
120
Is, Source-drain current(A)
I D =4A
100
RDS(on)(m Ω)
80
125 C
60
40
25 C
75 C
20
0
0
2
4
6
8
75 C
125 C
0.6
0.9
1.2
1.5
1.8
V GS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
C is s
C, Capacitance(pF)
25 C
1
0.3
10
500
400
300
200
100
C os s
C rs s
5
10
15
20
25
10
V DS =15V
I D =4A
8
6
4
2
0
0
0
10
30
0
2
4
6
8
10
12
14
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
16
50
I D, Drain Current(A)
Switching Time(ns)
100
TD(off )
10
Tr
Tf
TD(on)
10
RD
10
0.1
0.1
100
im
it
10
1m
10 s
1 0 ms
0m
s
0u
s
DC
V G S = 10V
6
)L
1
V DS =5V ,ID=1A
1
ON
S(
V G S =10V
S ingle P ulse
T A =25 C
1
10
30
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jan,16,2009
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STS3414
Ver 1.1
V DD
ton
RL
V IN
tf
90%
90%
D
V OUT
V OUT
VG S
R GE N
toff
td(off)
tr
td(on)
10%
INVE R TE D
10%
G
90%
V IN
S
50%
50%
10%
P ULS E WIDTH
Figure 14. Switching Waveforms
Figure 13. Switching Test Circuit
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
0.1
P DM
0.1
t1
t2
0.05
0.02
Single Pulse
0.01
0.01
0.00001
1.
2.
3.
4.
0.0001
0.001
0.01
0.1
1
10
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
Jan,16,2009
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STS3414
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
SOT 23
A
M
F
G
L
J
B
C
I
H
E
D (TYP.)
3/81
4/21
3/51
3/91
1/217
1/1:5
1/221
2/51
2/71
1/166
1/174
1/46
1/61
1/125
1/131
1
1/21
1
1/115
1/56
1/66
1/133
1/129
1/186!SFG/
I
2/11
1/21
2/41
1/31
1/14:
1/115
J
L
1/51
.
1/127
1/56
2/26
1/144
1/156
M
1±
21±
1±
21±
F
2/:1!SFG/
G
1/233
1/162
1/119
.
Jan,16,2009
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STS3414
Ver 1.1
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
TR
FEED DIRECTION
UNIT:р
PACKAGE
SOT-23
A0
3.20
²0.10
B0
K0
3.00
²0.10
1.33
²0.10
D0
О1.00
+0.25
D1
О1.50
+0.10
E
E1
E2
P0
P1
P2
T
8.00
+0.30
-0.10
1.75
²0.10
3.50
²0.05
4.00
²0.10
4.00
²0.10
2.00
²0.05
0.20
²0.02
SOT-23 Reel
W1
S
K
V
M
N
G
R
H
W
UNIT:р
TAPE SIZE
8р
REEL SIZE
M
N
W
W1
H
K
S
G
О178
О178
²1
О60
²1
9.00
²0.5
12.00
²0.5
О13.5
!!²0.5
10.5
2.00
²0.5
О10.0
R
V
5.00
18.00
Jan,16,2009
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