Gre r e Pro STU/D438S S a mHop Microelectronics C orp. Ver 1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m ) Max ID Rugged and reliable. 9 @ VGS=10V 40V TO-252 and TO-251 Package. 50A 11 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM Drain Current-Continuous -Pulsed TC=25°C TC=70°C a b I AS Single Pulse Avalanche Current c EAS Single Pulse Avalanche Energy c Limit Units 40 V ±20 V 50 40 A 147 A A 23 A 132 mJ TC=25°C 42 W TC=70°C 27 W -55 to 175 °C Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. Apr,28,2011 1 www.samhop.com.tw STU/D438S Ver 1.4 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS IGSS VGS=0V , ID=250uA d Gate-Body Leakage Current VGS=0V , ID=10mA Min Typ Max 40 45 1 ±100 VDS=32V , VGS=0V VGS= ±20V , VDS=0V Units V V uA nA a ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance 1.7 3 7 9 V m ohm VGS=4.5V , ID=23A 8.5 11 m ohm VDS=5V , ID=25A 60 S VDS=20V,VGS=0V f=1.0MHz 1380 250 155 pF pF pF VDD=20V ID=1A VGS=10V RGEN= 6 ohm 21 ns 25 66 ns ns 36 ns VDS=20V,ID=25A,VGS=10V 26 nC VDS=20V,ID=25A,VGS=4.5V 12 nC VDS=20V,ID=25A, VGS=10V 2.5 nC 6.6 nC VDS=VGS , ID=250uA VGS=10V , ID=25A 1.5 b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge b DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage a VGS=0V,IS=6A 0.78 6 A 1.3 V Notes _ 2%. _ 300us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) _ 1%. _ 1us,Duty Cycle < d.Pulse Test:Pulse Width < Apr,28,2011 2 www.samhop.com.tw STU/D438S Ver 1.4 15 100 V G S =4V V G S =3.5V 80 ID, Drain Current(A) ID, Drain Current(A) V G S =10V 60 40 V G S =3V 20 12 9 Tj=125 C 6 25 C -55 C 3 V G S =2.5V 0 0 0 0.5 1 2 1.5 3 2.5 1.8 2.4 3.0 3.6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 2.0 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.2 V GS, Gate-to-Source Voltage(V) 12 VGS=4.5V 9 6 VGS=10V 3 1.8 V G S =10V I D =25A 1.6 1.4 1.2 V G S =4.5V I D =23A 1.0 1 20 40 60 80 0 100 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 0.6 V DS, Drain-to-Source Voltage(V) 15 1 0 100 125 150 Tj, Junction Temperature(° C ) 1.40 I D =250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Apr,28,2011 3 www.samhop.com.tw STU/D438S Ver 1.4 60 30 Is, Source-drain current(A) I D =25A 25 RDS(on)(m Ω) 20 15 125 C 10 75 C 5 25 C 0 0 2 4 6 8 125 C 75 C 0 0.25 0.50 0.75 1.00 1.25 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 1500 C, Capacitance(pF) 10 1 10 1800 1200 900 600 Coss 300 Crss 10 VDS=20V ID=25A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 800 300 I D, Drain Current(A) 100 TD(off) Switching Time(ns) 25 C Tf Tr TD(on) 10 VDS=20V,ID=1A VGS=10V R 10 0.3 0.1 100 ( DS ) ON L im it 10 1m 10 m DC s 10 1 1 1 100 0u s s VGS=10V Single Pulse TA=25 C 1 10 40 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Apr,28,2011 4 www.samhop.com.tw STU/D438S Ver 1.4 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Apr,28,2011 5 www.samhop.com.tw STU/D438S Ver 1.4 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Apr,28,2011 6 www.samhop.com.tw STU/D438S Ver 1.4 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS INCHES MIN MAX 2.100 2.500 0.000 0.200 0.889 0.400 0.770 1.140 5.460 4.800 0.400 0.600 6.223 5.300 4.900 5.515 6.300 6.731 4.320 5.004 2.290 REF 8.900 10.400 1.780 1.397 2.743 REF. 0.508 REF. 0.890 1.700 1.100 0.500 ° 10° 0 15° 0° MIN MAX 0.083 0.098 0.008 0.000 0.035 0.016 0.030 0.045 0.189 0.215 0.024 0.016 0.245 0.209 0.193 0.217 0.265 0.248 0.170 0.197 0.090 BSC 0.350 0.409 0.055 0.070 0.108 REF. 0.020 REF. 0.035 0.067 0.020 0.043 10 ° 0° ° 15° 0 Apr,28,2011 7 www.samhop.com.tw STU/D438S Ver 1.4 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Apr,28,2011 8 www.samhop.com.tw