HIGH POWER NPN SILICON TRANSISTOR STP5508 • Hermetic Metal TO3 Package. • High Current • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEB IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 140V 120V 6V 50A 100A 20A 250W 1.43W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8758 Issue 1 Page 1 of 3 HIGH POWER NPN SILICON TRANSISTOR STP5508 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA ICEO Collector Cut-Off Current VCE = 60V IB = 0 50 VCE = 140V VBE(off) = 1.5V 10 TC = 150 °C 1.0 mA VEB = 6V IC = 0 100 µA IC = 20A IB = 2.0A 1.0 IC = 50A IB = 10A 3 IC = 20A IB = 2.0A 1.8 IC = 50A IB = 10A 3.5 IC = 20A VCE = 4V 1.8 IC = 1.0A VCE = 4V 50 IC = 20A VCE = 4V 50 IC = 50A VCE = 4V 10 VCE = 10V 1 (1) ICEX Collector Cut-Off Current IEBO Emitter Cut-Off Current (1) VCE(sat) VBE(sat) VBE(on) hFE (1) (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Forward-current transfer ratio Min. Typ Max. 120 Units V 120 µA V - DYNAMIC CHARACTERISTICS hfe Magnitude of common emitter small-signal shortcircuit forward current transfer ratio Cobo Output Capacitance tr Rise Time VCC = 80V 0.35 Storage Time IC = 20A 1.1 Fall Time IB1 = IB2 = 2A 0.25 ts tf IC = 1.0A f = 10MHz VCB = 10V IE = 0 - 600 pF f = 1.0MHz µS Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8758 Issue 1 Page 2 of 3 HIGH POWER NPN SILICON TRANSISTOR STP5508 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 1 2 6 .6 7 (1 .0 5 0 ) m a x . 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8758 Issue 1 Page 3 of 3