SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A • Hermetic Ceramic Surface Mount SMD1 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) 100V 80V 5.5V 2A 10A 70W 400 mW/°C -65 to +200°C -65 to +200°C Emitter – Base Voltage Continuous Collector Current Peak Collector Current (1) TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case (TC = 25°C) (1) Min. Typ. Max. Units 2.5 °C/W This value applies for Pw ≤ 8.3ms, duty cycle ≤ 1%. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9081 Issue 2 Page 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA ICES Collector Cut-Off Current ICEX Collector Cut-Off Current ICEO Collector Cut-Off Current IEBO Emitter Cut-Off Current (2) hFE Forward-current transfer ratio (2) (2) VBE VBE(sat) Base-Emitter Voltage (2) (2) VCE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. Typ Max. 80 Units V VCE = 60V VBE = 0 1.0 µA VCE = 100V VBE = 0 1.0 mA VCE = 60V VBE = -2V 25 TC = 150°C VCE = 60V IB = 0 50 VEB = 4V IC = 0 1.0 VEB = 5.5V IC = 0 1.0 IC = 50mA VCE = 5V 50 IC = 2.5A VCE = 5V 70 TC = -55°C 25 IC = 5A VCE = 5V 40 IC = 2.5 A VCE = 5V 1.45 IC = 2.5A IB = 250mA 1.45 IC = 5A IB = 500mA 2.2 IC = 2.5A IB = 250mA 0.75 IC = 5A IB = 500mA 1.5 IC = 500mA VCE = 5V 200 µA mA - V DYNAMIC CHARACTERISTICS hfe Magnitude of commonemitter, small-signal shortcircuit, forward-current transfer ratio hfe Small-Signal Current Gain Cobo Output Capacitance ton Turn-On Time VCC = 30V IC = 5A 0.5 ts Storage Time IB1 = 500mA IB2 = - IB1 1.4 tf Fall Time RL = 6Ω 0.5 toff Turn-Off Time Notes (2) 1.2 - f = 20MHz IC = 100mA VCE = 5V 50 - f = 1.0 KHz VCB = 10V IE = 0 250 pF f = 1.0MHz µS 1.5 Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9081 Issue 2 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A MECHANICAL DATA Dimensions in mm (inches) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 (TO ( TOTO-276AB) 276AB) Pad 1 - Emitter Pad 2 – Collector Pad 3 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9081 Issue 2 Page 3 of 3