N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A • VDSS = 90V , ID = 1.0A, RDS(ON) = 4.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO-257AA Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at TJ Tstg Operating Temperature Range Storage Temperature Range TC = 25°C TC ≤ 25°C De-rate TC > 25°C 90V ±20V 1.0A 3.0A 8.33W 66.7mW/°C -55 to +150°C -65 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. Units 15 °C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9006 Issue 1 Page 1 of 3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0µA 90 VDS = VGS ID = 1.0mA 0.8 TC = 125°C 0.3 VGS(th) Gate Threshold Voltage Min. Typ. Gate-Source Leakage Current IDSS Zero Gate Voltage Drain Current ID(ON)(2) On-State Drain Current RDS(on) (2) VDS(on) (2) Static Drain-Source On-State Resistance Static Drain-Source On-State Voltage VGS = ±20V VDS = 72V 2.0 V 2.5 VDS = 0V ±100 TC = 125°C ±500 VGS = 0 1.0 TC = 125°C 100 VDS = 10V VGS = 10V VGS = 5V ID = 0.3A 5.3 VGS = 10V ID = 1.0A 4 1.5 gfs VSD trr (2) (2) nA µA A TC = 125°C 7.5 VGS = 5V ID = 0.3A 1.6 VGS = 10V ID = 1.0A 4 TC = 125°C (2) Units V TC = -55°C IGSS Max. Ω V 7.5 Forward Transconductance VDS = 7.5V ID = 0.475A 170 Body Diode Forward Voltage VGS = 0 IS = 0.86A 0.7 Body Diode Reverse Recovery VGS = 0 IS = 1.0A mƱ 1.4 350 V ns DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 50 Coss Output Capacitance VDS = 25V 40 Crss Reverse Transfer Capacitance f = 1.0MHz 10 td(on) Turn-On Delay Time VDD = 25V 10 td(off) Turn-Off Delay Time ID = 1.0A RG = 50Ω Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com pF ns 10 Document Number 9006 Issue 1 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661M1A MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) 12.07 (0.500) 19.05 (0.750) 1 2 3 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC TO-257AA Pin 1 = Source Pin 2 = Gate Pin 3 = Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Case = Isolated Website: http://www.semelab-tt.com Document Number 9006 Issue 1 Page 3 of 3